DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505
Dual NPN wideband transistor
Product specification
Supersedes data of 1995 Sep 04
File under Discrete Semiconductors, SC14
1996 Oct 08
Philips Semiconductors
Product specification
Dual NPN wideband transistor
FEATURES
•
Small size
•
Temperature and h
FE
matched
•
Low noise and high gain
•
High gain at low current and low capacitance at low
voltage
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Oscillator and buffer amplifiers
•
Balanced amplifiers
•
LNA/mixer.
b1
6
handbook, halfpage
BFM505
PINNING - SOT363A
PIN
1
2
3
4
5
6
SYMBOL
b
1
e
1
c
2
b
2
e
2
c
1
base 1
emitter 1
collector 2
base 2
emitter 2
collector 1
DESCRIPTION
5
4
c1
b2
e1
e2
MAM210
c2
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
14
−
−
−
−
1
2
3
Top view
Marking code:
N0.
Fig.1 Simplified outline and symbol.
TYP.
MAX.
−
−
−
−
1.6
230
115
UNIT
Any single transistor
C
re
f
T
s
21
G
UM
F
R
th j-s
2
feedback capacitance
transition frequency
insertion power gain
maximum unilateral power gain
noise figure
thermal resistance from junction
to soldering point
I
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 3V; f = 1 GHz
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 3 V; f = 900 MHz;
T
amb
= 25
°C
I
C
= 1 mA; V
CE
= 3 V; f = 900 MHz;
Γ
S
=
Γ
opt
single loaded
double loaded
0.22
9
15
17
1.1
−
−
pF
GHz
dB
dB
dB
K/W
K/W
1996 Oct 08
2
Philips Semiconductors
Product specification
Dual NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System IEC 134.
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
up to T
s
= 118
°C;
note 1
−
−65
−
BFM505
MAX.
UNIT
Any single transistor
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
20
8
2.5
18
500
+175
175
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
single loaded
double loaded
CONDITIONS
VALUE
230
115
UNIT
K/W
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
Dual NPN wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I
C
= 2.5
µA;
I
E
= 0
I
E
= 2.5
µA;
I
C
= 0
V
CB
= 6 V; I
E
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C1
= I
C2
= 5 mA;
V
CE1
= V
CE2
= 6 V
I
E1
= I
E2
= 10 mA; T
amb
= 25
°C
MIN.
TYP.
−
−
−
−
120
BFM505
MAX.
−
−
−
50
250
−
−
UNIT
DC characteristics of any single transistor
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
∆h
FE
∆V
BEO
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
20
8
2.5
−
60
V
V
V
nA
collector-emitter breakdown voltage I
C
= 10
µA;
I
B
= 0
DC characteristics of the dual transistor
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
1
0
1.2
1
mV
AC characteristics of any single transistor
f
T
C
c
C
re
G
UM
transition frequency
collector capacitance
feedback capacitance
maximum unilateral power gain;
note 1
I
C
= 5 mA; V
CE
= 3 V; f = 1 GHz
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 3 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 5 mA; V
CE
= 3 V;
T
amb
= 25
°C;
f = 2 GHz
s
21
F
2
−
−
−
−
−
14
−
−
−
9
0.31
0.22
17
10
15
1.4
1.9
1.1
−
−
−
−
−
−
1.8
−
1.6
GHz
pF
pF
dB
dB
dB
dB
dB
dB
insertion power gain
noise figure
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 5 mA; V
CE
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 5 mA; V
CE
= 3 V;
f = 2 GHz;
Γ
S
=
Γ
opt
I
C
= 1 mA; V
CE
= 3 V;
f = 900 MHz;
Γ
S
=
Γ
opt
Note
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
s
21 2
=
10 log ------------------------------------------------------------ dB
(
1
–
s
11 2
) (
1
–
s
22 2
)
1996 Oct 08
4
Philips Semiconductors
Product specification
Dual NPN wideband transistor
BFM505
handbook, halfpage
600
MBG208
handbook, halfpage
12
MGD687
Ptot
(mW)
400
double loaded
fT
(GHz)
VCE = 6V
8
3V
single loaded
200
4
0
0
50
100
150
Ts ( C)
o
200
0
10
−1
1
IC (mA)
10
f = 1 GHz; T
amb
= 25
°C.
Fig.2
Power derating as a function of soldering
point temperature; typical values.
Fig.3
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
250
MRA719
handbook, halfpage
0.4
MRA720
hFE
200
Cre
(pF)
0.3
150
0.2
100
0.1
50
0
10
−3
0
10
−2
10
−1
1
10
10
2
IC (mA)
0
2
4
6
8
10
VCB (V)
V
CE
= 6 V.
I
C
= 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Oct 08
5
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