CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C894FP
Issued Date : 2015.09.10
Revised Date :
Page No. : 1/ 8
MTED6N25FP
Features
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=5A
250V
9A
410 mΩ(typ)
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Symbol
MTED6N25FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Device
MTED6N25FP-0-UB-X
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTED6N25FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C894FP
Issued Date : 2015.09.10
Revised Date :
Page No. : 2/ 8
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
C
=100°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current @ V
GS
=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=2mH, I
D
=3 Amps, V
DD
=50V
(Note 2&4)
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
250
±20
9*
5.7*
1.2
0.96
20*
3
9
3.6
36
14
2
1.3
300
260
-55~+150
V
A
Repetitive Avalanche Energy
mJ
(Note 3)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
3.5
62.5
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25°C.
4.100% tested by conditions of L=2mH, I
AS
=1A, V
GS
=10V, V
DD
=50V, rated 250V.
MTED6N25FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
250
-
2.0
-
-
-
-
-
Typ.
-
0.22
-
2.6
-
-
-
410
14.2
2.7
5.8
10.2
18.4
23.4
15.2
497
43
25
-
-
0.74
74
176
Max.
-
-
4.0
-
±
100
1
25
520
-
-
-
-
-
-
-
-
-
-
9
20
1
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C894FP
Issued Date : 2015.09.10
Revised Date :
Page No. : 3/ 8
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=40V, I
D
=3A
V
GS
=
±
20V
V
DS
=200V, V
GS
=0V
V
DS
=200V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=5A
nC
V
DS
=200V, I
D
=5A,V
GS
=10V
ns
V
DS
=125V, I
D
=5A, V
GS
=10V, R
G
=2.7
Ω
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
nC
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=5A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTED6N25FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
10
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C894FP
Issued Date : 2015.09.10
Revised Date :
Page No. : 4/ 8
Brekdown Voltage vs Ambient Temperature
1.4
I
D
, Drain Current (A)
8
6
4
2
10V
9V
8V
7V
6V
5.5V
1.2
1
0.8
0.6
0.4
5V
V
GS
=4.5V
I
D
=250
μ
A,
V
GS
=0V
0
0
3
6
9
12
V
DS
, Drain-Source Voltage(V)
15
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
10000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=4.5V
V
GS
=6V
0.8
0.6
0.4
0.2
1000
Tj=150°C
V
GS
=10V
100
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
3
I
D
=5A
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
900
800
700
600
500
400
300
200
0
2
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
2.5
2
1.5
1
0.5
0
V
GS
=10V, I
D
=5A
R
DS(ON)
@Tj=25°C : 410mΩ
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-65
-35
-5
25
55
85 115
Tj, Junction Temperature(°C)
145
175
MTED6N25FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C894FP
Issued Date : 2015.09.10
Revised Date :
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
1
0.8
0.6
0.4
I
D
=250
μ
A
100
C
oss
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
G
FS
, Forward Transfer Admittance(S)
100
-65
-35
-5
25
55
85 115
Tj, Junction Temperature(°C)
145
175
Gate Charge Characteristics
10
V
DS
=125V
V
GS
, Gate-Source Voltage(V)
8
6
V
DS
=50V
1
V
DS
=200V
4
2
I
D
=5A
0
0.1
V
DS
=40V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Safe Operating Area
100
Maximum Drain Current vs Case Temperature
12
I
D
, Maximum Drain Current(A)
1
μ
s
10
8
6
4
2
0
V
GS
=10V, R
θJC
=3.5°C/W
I
D
, Drain Current(A)
10
R
DSON
Limited
100
μ
s
1ms
1
10ms
100ms
0.1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θ
JC
=3.5°C/W
Single Pulse
DC
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTED6N25FP
CYStek Product Specification
嵌入式系统
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