CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
Page No. : 1/9
MTD300N20J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=3A
R
DS(ON)
@V
GS
=4.5V, I
D
=2A
200V
8.3A
302mΩ(typ)
303mΩ(typ)
Equivalent Circuit
MTD300N20J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G
D S
Ordering Information
Device
MTD300N20J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD300N20J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=10mH, I
AS
=4A, V
DD
=50V, V
GS
=10V
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
Operating Junction and Storage Temperature Range
Note : *1
.
Pulse width limited by maximum junction temperature
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
*3
200
±20
8.3
5.3
18
4
80
5
50
20
-55~+150
V
A
mJ
W
°C
*2. Duty cycle
≤
1%
*3. 100% tested by conditions of L=10mH, I
AS
=3A, V
GS
=10V, V
DD
=50V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
ƟJC
R
ƟJA
Value
2.5
110
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
200
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.2
-
6
-
-
-
302
303
15.6
1.8
4.3
6.2
7.8
55.8
35.4
Max.
-
-
2.5
-
±
100
1
25
380
395
-
-
-
-
-
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2A
V
GS
=
±
20V, V
DS
=0V
V
DS
=160V, V
GS
=0V
V
DS
=160V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
I
D
=3A, V
DS
=160V, V
GS
=10V
V
DS
=100V, I
D
=3A, V
GS
=10V,
R
G
=25
Ω
CYStek Product Specification
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
MTD300N20J3
nC
ns
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
-
-
-
-
-
-
-
-
529
46
24
-
-
0.78
54
97
-
-
-
8.3
18
1.2
-
-
pF
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
Page No. : 3/9
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
nC
I
S
=2A, V
GS
=0V
I
F
=3A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTD300N20J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
18
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
16
I
D
, Drain Current (A)
14
12
10
8
6
4
2
0
0
10V,9V,8V,7V,6V,5V,4V
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
3
.5V
3
V
V
GS
=2.5V
5
10
15
V
DS
, Drain-Source Voltage(V)
20
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
1
Tj=25°C
V
GS
=4.5V
0.8
0.6
0.4
0.2
Tj=150°C
V
GS
=10V
100
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
900
800
700
600
500
400
300
200
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
I
D
=3A
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=3A
R
DS(ON)
@Tj=25°C : 302mΩ
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD300N20J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
Ciss
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
1000
Capacitance---(pF)
100
C
oss
Crss
10
0
5
10
15
20
V
DS
, Drain-Source Voltage(V)
25
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
V
DS
=100V
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
V
GS
, Gate-Source Voltage(V)
10
8
6
V
DS
=40V
1
V
DS
=15V
4
2
V
DS
=160V
0.1
Ta=25°C
Pulsed
I
D
=3A
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Safe Operating Area
100
Maximum Drain Current vs Case Temperature
10
9
I
D
, Maximum Drain Current(A)
I
D
, Drain Current(A)
10
R
DSON
Limited
100
μ
s
1ms
10ms
100ms
1s
DC
8
7
6
5
4
3
2
1
0
25
V
GS
=10V, R
θJC
=2.5°C/W
1
0.1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θ
JC
=2.5°C/W
Single Pulse
0.01
0.1
10
100
V
DS
, Drain-Source Voltage(V)
1
1000
50
75
100
125
150
175
T
C
, Case Temperature(°C)
MTD300N20J3
CYStek Product Specification
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