CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
Spec. No. : C168J3
Issued Date : 2016.03.17
Revised Date : 2016.04.27
Page No. : 1/9
MTE030N10QJ3
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=15A
100V
29A
25.3mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTE030N10QJ3
Outline
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Ordering Information
Device
MTE030N10QJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE030N10QJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C168J3
Issued Date : 2016.03.17
Revised Date : 2016.04.27
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Continuous Drain Current @ T
C
=25C, V
GS
=10V
Continuous Drain Current @ T
C
=100C, V
GS
=10V
I
D
Continuous Drain Current @ T
A
=25C, V
GS
=10V
*4
Continuous Drain Current @ T
A
=70C, V
GS
=10V
*4
Pulsed Drain Current
*1
I
DM
Avalanche Current
I
AS
Avalanche Energy @ L=0.1mH, I
AS
=29A, V
DD
=25V, V
GS
=10V
*3
E
AS
Repetitive Avalanche Energy @ L=0.05mH
*1, *2
E
AR
Total Power Dissipation @T
C
=25℃
Total Power Dissipation @T
C
=100℃
P
D
Total Power Dissipation @T
A
=25℃
*4
Total Power Dissipation @T
A
=70℃
*4
Operating Junction and Storage Temperature Range
Tj, Tstg
100
±20
29
18
6.5
5.2
116
29
42
5
50
20
2.5
1.6
-55~+150
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
*4
Thermal Resistance, Junction-to-ambient, max
Note : *1
.
Pulse width limited by maximum junction temperature
Symbol
R
θJC
R
θJA
Value
2.5
50
110
Unit
C/W
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, I
AS
=24A, V
GS
=10V, V
DD
=25V
*4.
Surface mounted on 1 in² copper pad of FR-4 board
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
MTE030N10QJ3
Min.
100
-
2
-
-
-
-
-
-
-
-
Typ.
-
0.07
-
8.3
-
-
-
25.3
18.6
3.1
10.2
Max.
-
-
4
-
±
100
1
25
33
-
-
-
Unit
V
V/C
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25C, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=10V, I
D
=10A
V
GS
=
±
20V, V
DS
=0V
V
DS
=80V, V
GS
=0V
V
DS
=80V, V
GS
=0V, Tj=125C
V
GS
=10V, I
D
=15A
*1
nC
I
D
=15A, V
DS
=50V, V
GS
=10V
CYStek Product Specification
CYStech Electronics Corp.
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
12
26.6
22.4
14
558
124
111
1.4
-
-
0.9
28.6
33.5
-
-
-
-
-
-
-
-
29
116
1.2
-
-
Spec. No. : C168J3
Issued Date : 2016.03.17
Revised Date : 2016.04.27
Page No. : 3/9
ns
V
DS
=50V, I
D
=15A, V
GS
=10V,
R
G
=3
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=15A, V
GS
=0V
I
F
=15A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
300μs,
Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTE030N10QJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C168J3
Issued Date : 2016.03.17
Revised Date : 2016.04.27
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
40
I
D
, Drain Current (A)
10V,9V,8V,7V
6V
30
5.5V
20
5V
10
0
0
2
V
GS
=4.5V
I
D
=250μA,
V
GS
=0V
4
6
8
V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
SD
, Source-Drain Voltage(V)
V
GS
=0V
1
Tj=25°C
V
GS
=6V
0.8
0.6
0.4
0.2
Tj=150°C
V
GS
=7V
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
500
2.4
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
R
DS(on)
, Normalized Static Drain-
Source On-State Resistance
I
D
=15A
400
300
200
100
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=15A
R
DS(ON)
@Tj=25°C : 25.3mΩtyp.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTE030N10QJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C168J3
Issued Date : 2016.03.17
Revised Date : 2016.04.27
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
Capacitance---(pF)
C
oss
100
Crss
1
0.8
0.6
0.4
I
D
=250μA
10
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
10
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
V
DS
=10V
1
V
DS
=15V
V
GS
, Gate-Source Voltage(V)
8
6
4
2
V
DS
=50V
I
D
=15A
0.1
Ta=25°C
Pulsed
0.01
0.001
0
0.01
0.1
1
I
D
, Drain Current(A)
10
0
5
10
15
Qg, Total Gate Charge(nC)
20
Maximum Safe Operating Area
1000
Maximum Drain Current vs Case Temperature
35
I
D
, Drain Current(A)
100
R
DSON
Limited
I
D
, Maximum Drain Current(A)
30
25
20
15
10
5
0
V
GS
=10V, R
θJC
=2.5°C/W
100μs
1ms
10
10ms
100ms
1
T
C
=25°C, Tj=150°C
V
GS
=10V, R
θJC
=2.5°C/W
Single Pulse
1s
DC
0.1
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
25
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTE030N10QJ3
CYStek Product Specification
PCB设计
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