CYStech Electronics Corp.
Dual P-Channel Enhancement Mode MOSFET
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 1/9
MTA025B01V8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=-4.5V, T
A
=25°C
I
D
@V
GS
=-4.5V, T
C
=25°C
V
GS
=-4.5V, I
D
=-4.5A
P-CH
-14V
-5.0A
-7.1A
22.8mΩ
30.7mΩ
49.0mΩ
R
DSON(TYP)
V
GS
=-2.5V, I
D
=-2.2A
V
GS
=-1.8V, I
D
=-2.2A
Equivalent Circuit
MTA025B01V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTA025B01V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA025B01V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current
*2
Continuous Drain Current
Pulsed Drain Current
*1
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 2/9
Symbol
BV
DSS
V
GS
Limits
-14
±8
-5
-4
-7.1
-5.7
-40
1.5
*2
0.96
*2
1.24
*2
0.79
*2
2.8
1.1
-55~+150
Unit
V
T
A
=25
°C,
V
GS
=-4.5V
T
A
=70
°C,
V
GS
=-4.5V
T
C
=25
°C,
V
GS
=-4.5V
T
C
=70
°C,
V
GS
=-4.5V
I
DSM
I
D
I
DM
A
T
A
=25°C, Single device operation
T
A
=70°C, Single device operation
Total Power
Dissipation
T
A
=25°C, Single device value at dual operation
T
A
=70°C, Single device value at dual operation
T
C
=25°C
T
C
=100°C
Operating Junction and Storage Temperature Range
P
D
Tj; Tstg
P
DSM
W
°C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
R
th,j-a
R
th,j-c
Value
84
*2
101
*2
40
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Electrical Characteristics
(Tc=25°C, unless otherwise specified)
Symbol
Min.
-14
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
22.8
30.7
49.0
13
1088
251
229
13.6
25.6
74.6
66.6
Max.
-
-1
±100
-100
-10
31.0
41.5
66.0
-
-
-
-
-
-
-
-
Unit
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=±8V, V
DS
=0V
V
DS
=-12V, V
GS
=0V, Tj=25℃
V
DS
=-12V, V
GS
=0V, Tj=55℃
V
GS
=-4.5VV, I
D
=-4.5A
V
GS
=-2.5V, I
D
=-2.2A
V
GS
=-1.8V, I
D
=-2.2A
V
DS
=-5V, I
D
=-5A
Static
BV
DSS
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
MTA025B01V8
pF
V
DS
=-10V
,
V
GS
=0V
,
f=1MHz
ns
V
DS
=-10V
,
I
D
=-5A
,
V
GS
=-4.5V
,
R
G
=3
Ω
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Body Diode
*V
SD
*trr
*Qrr
-
-
-
-
-
-
14.2
1.7
5.1
-0.77
33.5
7.7
-
-
-
-1
-
-
nC
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 3/9
V
DS
=-10V
,
I
D
=-5A
,
V
GS
=-4.5V
V
ns
nC
V
GS=
0V, I
S
=-1A
I
F
=-5A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTA025B01V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics :
Typical Output Characteristics
40
35
-I
D
,
Drain Current (A)
30
25
20
15
10
5
0
0
1
2
3
4
-V
DS
,
Drain-Source Voltage(V)
5
2
V
-V
GS
=1.5V
2.5V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
10V,9V,8V,7V,6V,5V,4V
3V
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=-250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
1
0.8
0.6
0.4
0.2
V
GS
=0V
Tj=25°C
1000
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-1.5V
V
GS
=-1.8V
V
GS
=-2.5V
100
V
GS
=-4.5V
Tj=150°C
10
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
2
4
6
8
-I
DR
, Reverse Drain Current (A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
2
I
D
=-4.5A
180
160
140
120
100
80
60
40
20
0
0
1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=-2.5V, I
D
=-2.2A
R
DSON
@Tj=25°C : 30.7mΩ typ.
V
GS
=-4.5V, I
D
=-4.5A
R
DSON
@Tj=25°C: 22.8mΩ typ.
2
3
4
5
6
-V
GS
, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA025B01V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.) :
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
Spec. No. : C089V8
Issued Date : 2016.03.18
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=-1mA
10000
Capacitance---(pF)
Ciss
1
0.8
0.6
I
D
=-250μA
1000
C
oss
Crss
100
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-Source Voltage(V)
9
10
0.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance-(S)
V
DS
=-5V
10
Gate Charge Characteristics
10
-V
GS
, Gate-Source Voltage(V)
8
6
1
V
DS
=-10V
4
V
DS
=-10V
I
D
=-5A
0
0.1
Pulsed
Ta=25°C
2
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
0
6
12
18
24
Qg, Total Gate Charge(nC)
30
Maximum Safe Operating Area
100
1ms
10ms
Maximum Drain Current vs Junction Temperature
7
I
D
, Maximum Drain Current(A)
100
μ
s
-I
D
, Drain Current (A)
10
R
DS(ON)
Limited
6
5
4
3
2
1
0
V
GS
=-4.5V, R
θ
JA
=84°C/W
1
100ms
1s
T
A
=25°C, Tj=150°C
R
θ
JA
=84°C/W, V
GS
=-4.5V
Single Pulse
DC
0.1
0.01
0.01
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
MTA025B01V8
CYStek Product Specification
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