CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C085FP
Issued Date : 2016.01.21
Revised Date :
Page No. : 1/10
MTN10N60CFP
Description
BV
DSS
I
D @
V
GS
=10V, T
C
=25°C
R
DSON(TYP) @
V
GS
=10V, I
D
=6A
600V
10A
0.54Ω
The MTN10N60CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Applications
•
Power Factor Correction
•
LCD TV Power
•
Full and Half Bridge Power
Ordering Information
Device
MTN10N60CFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
MTN10N60CFP
Spec. No. : C085FP
Issued Date : 2016.01.21
Revised Date :
Page No. : 2/10
Outline
TO-220FP
G：Gate D：Drain S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
(Note 1)
V
DS
600
Gate-Source Voltage
V
GS
±30
10*
Continuous Drain Current @V
GS
=10V, T
C
=25°C
I
D
6.3*
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 2)
I
DM
40*
Single Pulse Avalanche Current @ L=0.1mH
I
AS
10
Single Pulse Avalanche Energy @ L=5mH, I
D
=9 Amps, V
DD
=50V
(Note 3)
E
AS
202.5
Repetitive Avalanche Energy
(Note 2)
E
AR
5
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
T
L
300
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
T
PKG
260
seconds
Pd
Total Power Dissipation (T
C
=25℃)
54
0.4
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Note : 1
.
T
J
=+25
℃
to +150
℃
.
2
.
Pulse width limited by maximum junction temperature.
3.100% tested by conditions of L=5mH, I
AS
=5A, V
GS
=10V, V
DD
=50V.
V
A
mJ
°C
W
W/°C
°C
MTN10N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Spec. No. : C085FP
Issued Date : 2016.01.21
Revised Date :
Page No. : 3/10
Value
2.3
62.5
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
-
0.7
-
12
-
-
-
0.54
36.3
8.7
10.7
18.6
9.2
63
11.2
1651
149
26
0.84
-
-
422
3.8
Max.
-
-
4.0
-
±
100
1
10
0.7
-
-
-
-
-
-
-
-
-
-
1.2
10
40
633
5.7
Unit
V
V/°C
V
S
nA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=5A
V
GS
=
±
30V
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V, Tj=125°C
V
GS
=10V, I
D
=6A
Static
BV
DSS
600
∆BV
DSS
/∆Tj
-
V
GS(th)
2.0
*G
FS
-
I
GSS
-
I
DSS
-
I
DSS
-
*R
DS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
nC
I
D
=10A, V
DD
=300V, V
GS
=10V
V
DD
=300V, I
D
=10A, V
GS
=10V,
R
G
=9.1
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
ns
μC
I
S
=10A, V
GS
=0V
V
GS
=0V, I
F
=10A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN10N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
16
I
D
, Drain Current(A)
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C085FP
Issued Date : 2016.01.21
Revised Date :
Page No. : 4/10
Brekdown Voltage vs Ambient Temperature
18
14
12
10
8
6
4
2
0
0
10
10V,9V,8V,7V,6V
1.2
5.
5
V
1.0
5V
V
GS
=4.5V
0.8
I
D
=250μA,
V
GS
=0V
0.6
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
20
30
V
DS
, Drain-Source Voltage(V)
40
50
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
1.0
R
DS(ON)
, Static Drain-Source On-
State Resistance(Ω)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
0.1
1
10
I
D
, Drain Current(A)
100
V
GS
=10V
30
25
I
D
, Drain Current(A)
20
15
V
DS
=10V
Ta=25°C
V
DS
=30V
10
5
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R
DS(ON)
, Static Drain-Source On-State
Resistance(Ω)
100
Forward Drain Current vs Source-Drain Voltage
I
F
, Forward Current(A)
1.6
10
V
GS
=0V
1.2
1
Ta=150°C
0.1
Ta=25°C
0.8
I
D
=6A
Ta=25°C
0
0
2
4
6
8
10
0.4
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, Gate-Source Voltage(V)
V
SD
, Source Drain Voltage(V)
MTN10N60CFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
Ciss
1000
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
=6A,
V
GS
=10V
Spec. No. : C085FP
Issued Date : 2016.01.21
Revised Date :
Page No. : 5/10
Static Drain-Source On-resistance vs Ambient Temperature
Capacitance(pF)
100
Coss
10
Crss
f=1MHz
1
R
DS(ON)
@Tj=25°C : 0.54Ω typ.
-75
-50
-25
0
25 50 75 100 125 150 175
,
Ambient Temperature(°C)
T
A
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
R
DS(ON)
Limited
10
μ
s
Gate Charge Characteristics
10
V
DS
=120V
8
V
DS
=300V
6
4
V
DS
=480V
I
D
, Drain Current(A)
10
1ms
1
10ms
100ms
DC
0.1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=2.3°C/W
Single pulse
1
10
100
V
GS
, Gate-Source Voltage(V)
100
μ
s
2
I
D
=10A
0
0.01
1000
0
5
10
15
20
25
30
35
40
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
12
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
I
D
, Maximum Drain Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
1
0.8
0.6
0.4
0.2
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250μA
V
GS
=10V, R
θJC
=2.3°C/W
MTN10N60CFP
CYStek Product Specification
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