CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 1/10
MTN10N65BE3
Description
BV
DSS
I
D @
V
GS
=10V, T
C
=25°C
R
DSON(TYP) @
V
GS
=10V, I
D
=6A
650V
10A
0.54Ω
The MTN10N65BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Open Framed Power Supply
•
Adapter
•
STB
Ordering Information
Device
MTN10N65BE3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N65BE3
CYStek Product Specification
CYStech Electronics Corp.
Symbol
MTN10N65BE3
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 2/10
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
dv/dt
T
L
P
D
Tj, Tstg
650
±30
10*
6.3*
40*
10
215
6
4.5
300
185
1.48
-55~+150
V
A
mJ
V/ns
°C
W
W/°C
°C
*
100% UIS testing in condition of V
D
=50V, L=4.3mH, V
G
=10V, I
L
=10A, Rated V
DS
=650V
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=10A, V
DD
=50V, L=4.3mH, R
G
=25
Ω
, starting T
J
=+25
℃
.
3
.
I
SD
≤10A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting T
J
=+25
℃
.
MTN10N65BE3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 3/10
Value
0.68
62.5
Unit
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
650
-
2.0
-
-
-
-
-
Typ.
-
0.6
-
16
-
-
-
0.54
54.2
9.6
22.2
21.2
18.2
81.8
25.8
1920
178
24
2
0.78
-
-
411
3.3
Max.
-
-
4.0
-
±
100
1
10
0.75
-
-
-
-
-
-
-
-
-
-
-
1.5
10
40
-
-
Unit
V
V/°C
V
S
nA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=6A
V
GS
=
±
30V
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V, Tj=125
°
C
V
GS
=10V, I
D
=6A
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
nC
I
D
=10A, V
DD
=520V, V
GS
=10V
V
DD
=325V, I
D
=10A, V
GS
=10V,
R
G
=9.1
Ω
ns
pF
Ω
V
A
ns
μC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=6A, V
GS
=0V
V
GS
=0V, I
F
=10A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN10N65BE3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
40
32
I
D
, Drain Current(A)
10V,9V,8V,7V
6V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 4/10
Brekdown Voltage vs Ambient Temperature
36
28
24
20
16
12
8
4
0
0
1.2
1.0
5.5
V
0.8
5V
V
GS
=4.5V
10
20
30
V
DS
, Drain-Source Voltage(V)
40
50
0.6
-75
-50
-25
0
25
50
75
I
D
=250μA,
V
GS
=0V
100 125 150 175
T
A
,
Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
1000
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
900
800
700
600
500
400
300
200
100
0
0.01
0.1
1
10
I
D
, Drain Current(A)
100
V
GS
=10V
35
30
I
D
, Drain Current(A)
25
20
15
10
5
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
V
DS
=10V
Ta=25°C
V
DS
=30V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
1800
100
Forward Drain Current vs Source-Drain Voltage
1400
1200
1000
800
600
400
200
0
0
2
4
6
8
10
I
D
=6A
Ta=25°C
I
F
, Forward Current(A)
1600
10
V
GS
=0V
1
Ta=150°C
0.1
Ta=25°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, Gate-Source Voltage(V)
V
SD
, Source Drain Voltage(V)
MTN10N65BE3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
=6A,
V
GS
=10V
Spec. No. : C114E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 5/10
Static Drain-Source On-resistance vs Ambient Temperature
Ciss
Capacitance(pF)
1000
Coss
100
Crss
f=1MHz
10
R
DS(ON)
@Tj=25°C:0.54Ω typ.
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage(V)
30
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
Maximum Safe Operating Area
100
R
DS(ON)
Limited
100
μ
s
1ms
10ms
100ms
10
μ
s
Gate Charge Characteristics
10
V
DS
=130V
8
V
GS
, Gate-Source Voltage(V)
I
D
, Drain Current(A)
10
V
DS
=325V
6
4
V
DS
=520V
1
DC
0.1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=0.68°C/W
Single pulse
1
10
100
1000
2
I
D
=10A
0
0
6
12
18
24
30
36
42
48
54
60
0.01
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
12
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
I
D
, Maximum Drain Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
1
0.8
0.6
0.4
0.2
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μA
V
GS
=10V, R
θJC
=0.68°C/W
MTN10N65BE3
CYStek Product Specification
Microchip MCU
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