Cs
J.
S.11S.U
ucti, One.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon
Controlled Rectifier
1200 VOLTS
63A RMS
HIGH SPEED
C148 Silicon Controlled Rectifier is designed for power
switching at high frequencies. This is an Vll-dif fused device which is consider-
able smaller in size than comparably rated high power SCR's.
FEATURES:
•
•
•
•
Fully characterized for operation inverter and chopper applications.
High dv/dt with selections available.
Excellent surge and I
2
t ratings providing easy fusing.
Compact hermetic package, 54 — 28 stud.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, V
O R M
»
Tj = -40°C to +125°C
REPETITIVE PEAK REVERSE
VOLTAGE, V
R R M
l
Tj = -40°C to +125°C
NON-REPETITIVE PEAK
REVERSE VOLTAGE, V
RSM
»
Tj - +125°C
C148M
C148S
C148N
C148T
C148P
C148PA
C148PB
1
600 Volts
700
800
900
1000
1100
1200
600 Volts
700
800
900
1000
1100
1200
720 Volts
840
960
1080
1200
1320
1440
Half sinewave waveform, 10 ms max. pulse width.
RMS On-State Current, IX(RMS)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TS
M (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TSM
(50 Hz)
I
2
t (for fusing) for times > 1.5 milliseconds
I
2
t (for fusing) for times > 8.3 milliseconds
Critical Rate-of-Rise of On-State Current, Non-Repetitive
Critical Rate-of-Rise of On-State Current, Repetitive
Average Gate Power Dissipation, PQ(AV)
Storage Temperature, T
stg
Operating Temperature, Tj
Stud Torque
63 Amperes
700 Amperes
670 Amperes
1360 (RMS Ampere)
2
Seconds
2000 (RMS Ampere)
2
Seconds
100 A/MS t
75 A/MS t
2 Watts
-40°Cto+150°C
-40°Cto+125°C
30 Lb.-In.
3.4 N-rn
Quality Semi-Conductors
U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TEST
SYMBOL
MIN.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TYP.
MAX.
UNITS
Repetitive Peak Reverse
and Off-State Current
Thermal Resistance
Critical Rate-of-Rise of
Off-State Voltage (Higher
values may cause device
switching)
DC Gate Trigger Current
IRRM
and
7
12
mA
TEST CONDITIONS
Tj = -40°Cto+125°C,
V = V
DRM
= V
R R M
Junction-to-Case
JDRM
R0jc
dv/dt
-
-
.35
°C/Watt
V/jusec
200
Tj = +125°C, Gate Open. V
DRM
= Rated
using Linear or Exponential Rising
Waveform.
V^DM
Fxnnnenti-il dv/rtr -
L>KM
( f.V*\r minimum dv/dt selection
IGT
DC Gate Trigger Voltage
9
VGT
-
-
-
-
-
0.25
-
-
-
-
-
—
—
150
300
125
3.0
3.5
—
4.0
mAdc
T
c
= +25° C, V
D
= 6 Vdc, R
L
= 3 Ohms
T
c
=
-40° C, V
D
= 6 Vdc, R
L
= 3 Ohms
25°C, V
D
= 6 Vdc, R
L
= 3 Ohms
-40° C, V
D
= 6 Vdc, R
L
= 3 Ohms
T
c
= +125°C, V
D
= 6 Vdc, R
L
= 3 Ohms
Vdc
T
c
=
T
c
=
T
c
= +125°C, Rated V
DRM
, R
L
=
1000 Ohms
Volts
Msec
T
c
= +25 °C, ITM = 5 0 0 Amps Peak, 1
millisecond wide pulse. Duty cycle < 1%
(1)
(2)
(3)
(4)
(5)
Tc =+125°C
I
TM
= 150 Amps.
V
R
= 50 Volts Min.
V
DRM
(Reapplied)
Rate-of-Rise of Reapplied Off -State
Voltage = 20 V/jusec (linear).
(6) Commutation di/dt = 5 Amps/^sec
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
0 Volts, 100 Ohms
T
c
=+125°C
I
TM
= 150 Amps
V
R
= 50 Volts Min.
V
DRM
(Reapplied)
Rate-of-Rise of Reapplied Off-State
Voltage = 200 V/Aisec (linear).
(6) Commutation di/dt = 5 Amps/Msec.
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
0 Volts, 100 Ohms.
Msec
(1)
(2)
(3)
(4)
(5)
T
c
=+125°C
I
TM
=
15
° Amps
V
R
= 1 volt
V
DRM
(Reapplied)
Rate-of-Rise of Off-State Voltage =
200 V//nsec (linear).
(6) Commutation di/dt = 5 Amps/Msec.
(7) Repetition Rate = 1 pps.
(8) Gate Bias During Turn-Off Interval =
0 Volts, 100 Ohms.
(1)
(2)
(3)
(4)
(5)
Peak On-State Voltage
Conventional Circuit
Commutated Turn-Off
Time
C148 - 30
CHS - 40
VTM
tq
—
-
-
30
40
CHS - 30
CHS - 40
38
48
t
t
Conventional Circuit
Commutated Turn-Off
Time (with Feedback
Diode)
CHS - 30
CHS 40
*q
-
45
55
-
Quality Semi-Conductors
u<z£i. v/z
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
METRIC
METRIC
SYM.
INCHES
MM
WIN.
10.72
3.05
13.57
MAX.
11,47
3.42
14.34
32.78
SYM.
INCHES
MM
MIN.
MAX.
WIN.
A
B
C
0
E
F
G
TERMINAL
CAT!
MAX.
452
MIN.
L
M
N
P
Q
S
T
MAX.
.422
.120
.534
1.230
029
.258
138
.115
.240
.090
.055
.831
.0)2
.220
.676
-
.115
.066
.901
-
-
.684
.597
2.29
1.40
21.11
.31
5.59
17.18
-
2.91
L67
22.88
.135
.565
.062
REF.
REF
—
.300
.182
1.290
31.25
.74
6.55
3.50
2.83
6.10
4.30
-
-
1736
15.15
1.56
REF
REF
—
7.62
4.62
TERMINAL
2
CATHOOC
TERMINAL
3
N
THREAD SUE
l/4-2» UNF-2A
H
J
K
ANODE
NOTE: I. COMPLETE THREADS TO WITHIN 2
1/2
THO. OF SEATING PLANE.
.169
Quality Semi-Conductors
Microchip MCU
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