CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 1/ 9
MTN2N65CFP
Description
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
C
=100°C
R
DS(ON)
@V
GS
=10V, I
D
=1A
650V
2A
1.3A
4.5Ω(typ)
The MTN2N65CFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Applications
•
Adapter
•
Switching Mode Power Supply
Ordering Information
Device
MTN2N65CFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN2N65CFP
CYStek Product Specification
CYStech Electronics Corp.
Symbol
MTN2N65CFP
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 2/ 9
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
V
DS
650
Gate-Source Voltage
V
GS
±30
2*
Continuous Drain Current @T
C
=25°C, V
GS
=10V
I
D
1.3*
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Pulsed Drain Current
(Note 1)
I
DM
8*
Avalanche Current
(Note 1)
I
AS
2
Single Pulse Avalanche Energy @L=2mH, V
GS
=10V, V
DD
= 50V
(Note 2)
E
AS
4
Repetitive Avalanche Energy
(Note 1)
E
AR
2
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
300
T
L
from case for 10 seconds
P
D
Total Power Dissipation (T
C
=25℃)
23
0.18
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
Note : 1
.
Pulse width limited by maximum junction temperature.
2
.
100% testsed by conditions of I
AS
=1A, V
DD
=50V, L=2mH, V
GS
=10V, starting T
J
=+25
℃
.
V
A
mJ
°C
W
W/°C
°C
MTN2N65CFP
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 3/ 9
Value
5.5
62.5
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
650
-
2.0
-
-
-
-
-
Typ.
-
0.7
-
2.3
-
-
-
4.5
7.8
2.3
2.4
5.4
3.2
8.6
5.6
268
32
11
3.7
-
-
0.8
286
760
Max.
-
-
4.0
-
±
100
1
10
5.8
11.7
-
-
10.8
6.4
17.2
11.2
402
48
16
-
2
8
1.5
-
-
Unit
V
V/°C
V
S
nA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=1A
V
GS
=
±
30V
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=1A
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
I
D
=2A, V
DD
=520V, V
GS
=10V
V
DD
=325V, I
D
=1.8A, V
GS
=10V,
R
G
=25
Ω
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=1.8A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN2N65CFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 4/ 9
Brekdown Voltage vs Ambient Temperature
I
D
, Drain Current(A)
3
10V
9V
8V
7V
6V
5.5V
1.2
5V
2
1.0
1
4.5V
V
GS
=4V
0.8
I
D
=250μA,
V
GS
=0V
0
0
10
20
30
V
DS
, Drain-Source Voltage(V)
40
50
0.6
-75
-50
-25
0
25
50
75
100 125 150 175
T
A
,
Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
10
R
DS(ON)
, Static Drain-Source On-
State Resistance(Ω)
9
8
7
6
5
4
3
2
1
0
0.01
0.1
1
I
D
, Drain Current(A)
10
V
GS
=10V
4
Ta=25°C
I
D
, Drain Current(A)
3
V
DS
=30V
2
1
V
DS
=10V
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
10
V
GS
=0V
10
R
DS(ON)
, Static Drain-Source On-State
Resistance(Ω)
9
I
F
, Forward Current(A)
8
7
6
5
4
3
2
1
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=1A
Ta=25°C
0.001
0
1
0.1
Ta=150°C
Ta=25°C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source Drain Voltage(V)
MTN2N65CFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Ciss
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
1000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Spec. No. : C082FP
Issued Date : 2016.02.25
Revised Date :
Page No. : 5/ 9
Static Drain-Source On-resistance vs Ambient Temperature
Capacitance(pF)
100
Coss
10
Crss
f=1MHz
1
I
D
=1A,
V
GS
=10V
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage(V)
30
-75
-50
-25
0
25 50 75 100 125 150 175
,
Ambient Temperature(°C)
T
A
Maximum Safe Operating Area
10
Gate Charge Characteristics
10
μ
s
10
V
DS
=130V
8
V
GS
, Gate-Source Voltage(V)
R
DS(ON)
Limited
100
μ
s
1ms
V
DS
=325V
I
D
, Drain Current(A)
1
10ms
6
4
V
DS
=520V
100ms
0.1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=5.5°C/W
Single pulse
0.01
1
10
100
DC
2
I
D
=2A
0
1000
0
1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
2.5
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
I
D
, Maximum Drain Current(A)
2
1
0.8
0.6
0.4
0.2
I
D
=250μA
1.5
1
0.5
V
GS
=10V, R
θJC
=5.5°C/W
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN2N65CFP
CYStek Product Specification
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