CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C107J3
Issued Date : 2015.12.15
Revised Date :
Page No. : 1/9
MTP4435AJ3
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=-10V, T
C
=25°C
I
D
@V
GS
=-10V, T
A
=25°C
R
DS(ON)
@V
GS
=-10V, I
D
=-10A
R
DS(ON)
@V
GS
=-5V, I
D
=-7A
-30V
-37.3A
-10A
11.4mΩ(typ)
16.7mΩ(typ)
Symbol
MTP4435AJ3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTP4435AJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP4435AJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C107J3
Issued Date : 2015.12.15
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=-10V, T
C
=25°C
Continuous Drain Current @V
GS
=-10V, T
C
=100°C
Continuous Drain Current @V
GS
=-10V, T
A
=25°C
Continuous Drain Current @V
GS
=-10V, T
A
=70°C
Pulsed Drain Current
Single Pulse Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, V
GS
=-10V, V
DD
=-15V
T
C
=25℃
T
C
=100℃
Power Dissipation
T
A
=25℃
T
A
=100℃
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
-30
±25
-37.3
-23.6
-10
-8
-150
*1
-20
72
*2
36
*4
14.4
*4
2.5
*3
1.0
*3
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
θJC
R
θJA
Value
3.5
50
*3
Unit
°C/W
Note : *1. Pulse width limited by safe operating area.
*2 . 100% tested by conditions of V
DD
=-15V, L=0.1mH, V
G
=-10V, I
AS
=-10A.
*3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with
T
A
=25°C.
The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C
.
The value in any given application depends on the user’s specific board design.
*4 . The power dissipation P
D
is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It
is used to determined the current rating, when this rating falls below the package limit.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
I
DSS
*R
DS(ON)
*R
DS(ON)
Dynamic
*Qg (V
GS
=10V)
*Qg (V
GS
=4.5V)
*Qgs
*Qgd
MTP4435AJ3
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
19
-
-
-
11.4
16.7
32.9
16.3
5.1
7.1
Max.
-
-2.5
-
±
100
-1
-25
15.5
23.0
-
-
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=-250μA
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-5V, I
D
=-10A
V
GS
=
±
25V
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, Tj=70°C
V
GS
=-10V, I
D
=-10A
V
GS
=-5V, I
D
=-7A
nC
V
DS
=-15V, I
D
=-10A, V
GS
=-10V
CYStek Product Specification
CYStech Electronics Corp.
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Rg
Source-Drain Diode
*I
S
*V
SD
*trr
*Qrr
-
-
-
-
-
-
-
-
-
-
-
-
10.2
18.6
69.8
17.2
1552
188
170
6.6
-
-0.79
12.3
6.3
-
-
-
-
-
-
-
-
-37
-1.2
-
-
Spec. No. : C107J3
Issued Date : 2015.12.15
Revised Date :
Page No. : 3/9
ns
V
DS
=-15V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=-15V, f=1MHz
f=1MHz
I
S
=-3A, V
GS
=0V
I
S
=-3A, V
GS
=0, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTP4435AJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
50
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C107J3
Issued Date : 2015.12.15
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
-10V, -9V, -8V, -7V,-6V, -5V
-I
D
, Drain Current (A)
40
-4V
1.2
1
0.8
0.6
0.4
I
D
=-250
μ
A,
V
GS
=0V
30
20
10
0
0
1
2
3
4
-V
DS
, Drain-Source Voltage(V)
5
V
GS
=-2.5V
-3.5V
-3V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1.2
V
GS
=0V
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=-4V
-4.5V
-5V
-10V
-V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
0.8
0.6
0.4
0.2
Tj=150°C
10
0.01
0.1
1
-I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
0
4
8
12
16
-I
S
, Source Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
R
DS(on)
, Normalized Static Drain-Source
On-State Resistance
200
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-10A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
R
DS(ON)
@Tj=25°C : 11.4 mΩ typ.
V
GS
=-10V, I
D
=-10A
MTP4435AJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
-V
GS(th)
, normliz Threshold Voltage
1.4
1.2
Spec. No. : C107J3
Issued Date : 2015.12.15
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=-1mA
1
0.8
0.6
0.4
I
D
=-250μA
1000
C
oss
Crss
100
0
5
10
15
20
25
-V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
8
6
4
2
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
-V
GS
, Gate-Source Voltage(V)
10
V
DS
=-10V
V
DS
=-5V
1
V
DS
=-5V
Pulsed
T
A
=25°C
V
DS
=-15V
0.1
I
D
=-10A
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
0
8
16
24
32
Qg, Total Gate Charge(nC)
40
Maximum Safe Operating Area
1000
100
μ
s
1ms
10ms
Maximum Drain Current vs Case Temperature
45
-I
D
, Maximum Drain Current(A)
40
35
30
25
20
15
10
5
0
25
V
GS
=-10V, R
θ
JC
=3.5°C/W
-I
D
, Drain Current(A)
100
10
100ms
1s
1
T
C
=25°C, Tj=150°C, V
GS
=-10V
R
θ
JC
=3.5°C/W, Single Pulse
DC
0.1
0.1
1
10
-I
D
, Drain-Source Voltage(V)
100
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTP4435AJ3
CYStek Product Specification
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