CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C092E3
Issued Date : 2015.12.14
Revised Date :
Page No. : 1/ 8
MTB4D0N03BE3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=20A
R
DS(ON)
@V
GS
=4.5V, I
D
=10A
30V
56A
13A
4.1 mΩ(typ)
5.5 mΩ(typ)
Symbol
MTB4D0N03BE3
Outline
TO-220
G：Gate D：Drain S：Source
G D S
Ordering Information
Device
MTB4D0N03BE3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB4D0N03BE3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Spec. No. : C092E3
Issued Date : 2015.12.14
Revised Date :
Page No. : 2/ 8
Symbol
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V (silicon limit)
(Note 1)
Continuous Drain Current @T
C
=25°C, V
GS
=10V (package limit)
(Note 1)
Continuous Drain Current @T
C
=100°C, V
GS
=10V
(Note 1)
Continuous Drain Current @T
A
=25°C, V
GS
=10V
(Note 2)
Continuous Drain Current @T
A
=70°C, V
GS
=10V
(Note 2)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=0.1mH, I
D
=40 Amps, V
DD
=15V
(Note 4)
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
T
L
T
PKG
Tj, Tstg
30
±20
70
56
44
13.3
10.6
280
40
80
6
57
23
2.1
1.3
300
260
-55~+150
V
A
Repetitive Avalanche Energy
mJ
(Note 3)
T
C
=25°C
(Note 1)
T
C
=100°C
(Note 1)
Power Dissipation
T
A
=25°C
(Note 2)
T
A
=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
R
θJC
R
θJA
Value
2.2
60
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature T
J(MAX)
=150°C.
4. Ratings are based on low frequency
and low duty cycles to keep initial T
J
=25
°
C. 100% tested by condition of V
DD
=15V,
I
D
=15A, L=0.5mH, V
GS
=10V.
MTB4D0N03BE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
*Qg (V
GS
=10V)
*Qg (V
GS
=4.5V)
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
Ciss
Coss
Crss
Source-Drain Diode
*I
S
*I
SM
*V
SD
*trr
*Qrr
30
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
29
-
19.7
-
-
-
4.1
5.5
32.3
17
5.2
8.4
13
16.6
44
11.6
1446
274
194
-
-
0.83
15.5
8.5
-
-
2.5
-
±
100
1
5
5.4
7.8
-
-
-
-
-
-
-
-
-
-
-
56
280
1.2
-
-
V
mV/°C
V
S
nA
μA
m
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C092E3
Issued Date : 2015.12.14
Revised Date :
Page No. : 3/ 8
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=20A
V
GS
=
±
20V
V
DS
=24V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=10A
nC
V
DS
=15V, V
GS
=10V, I
D
=20A
ns
V
DS
=15V, I
D
=20A, V
GS
=10V,
R
GS
=2.7
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
pF
A
V
ns
nC
I
S
=20A, V
GS
=0V
V
GS
=0V, I
F
=20A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB4D0N03BE3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
160
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V
Spec. No. : C092E3
Issued Date : 2015.12.14
Revised Date :
Page No. : 4/ 8
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250μA,
V
GS
=0V
I
D
, Drain Current(A)
120
V
GS
=5V
80
V
GS
=4V
V
GS
=3V
V
GS
=3.5V
40
0
0
1
2
3
4
V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
0.8
0.6
Tj=125°C
10
V
GS
=4.5V
V
GS
=10V
0.4
0.2
1
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
70
60
50
40
30
20
10
0
0
2
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
80
I
D
=20A
2.8
2.4
2
1.6
1.2
0.8
0.4
0
R
DS(ON)
@Tj=25°C :4.1mΩ typ.
V
GS
=10V, I
D
=20A
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB4D0N03BE3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, NormalizedThreshold Voltage
10000
1.4
1.2
1
0.8
0.6
0.4
0
5
10
15
20
25
V
DS
, Drain-Source Voltage(V)
30
-75 -50 -25
Spec. No. : C092E3
Issued Date : 2015.12.14
Revised Date :
Page No. : 5/ 8
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
Ciss
I
D
=1mA
1000
C
oss
I
D
=250
μ
A
Crss
100
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
Gate Charge Characteristics
10
8
6
4
2
0
V
DS
=15V
I
D
=20A
10
1
V
DS
=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
V
GS
, Gate-Source Voltage(V)
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
10
20
30
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
40
Maximum Safe Operating Area
1000
10
μ
s
90
80
I
D
, Maximum Drain Current(A)
Silicon Limit
I
D
, Drain Current(A)
100
R
DS(ON)
Limited
70
60
50
40
30
20
10
0
25
V
GS
=10V, R
θ
JC
=2.2°C/W
Package Limit
100
μ
s
1ms
10ms
100ms
DC
10
T
C
=25°C, Tj=150°C,
V
GS
=10V, R
θ
JC
=2.2°C/W
Single Pulse
1
0.1
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB4D0N03BE3
CYStek Product Specification
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