CYStech Electronics Corp.
N-Channel Enhancement Mode MOSFET
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 1/8
MTB280N15N6
Features
•
Simple drive requirement
•
Low on-resistance
•
Small package outline
•
Pb-free lead plating package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(TYP)
V
GS
=-10V, I
D
=-1.5A
V
GS
=-4.5V, I
D
=-1.5A
150V
2.2A
1.7A
288mΩ
299mΩ
Equivalent Circuit
MTB280N15N6
G：Gate S：Source
D：Drain
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
C
=25
°C
T
C
=70
°C
T
A
=25
°C
T
A
=70
°C
Symbol
V
DS
V
GS
(Note 1)
(Note 1)
I
D
Pulsed Drain Current
(Note 2, 3)
I
DM
T
C
=25
°C
T
C
=70
°C
Total Power Dissipation
T
A
=25
°C
T
A
=70
°C
Operating Junction Temperature and Storage Temperature Range
P
D
Tj, Tstg
Limits
150
±20
2.2
1.8
1.7
1.4
8
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156
℃
/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width
≤300μs,
Duty Cycle≤2%
Symbol
R
θJC
R
θJA
Value
39
62.5
Unit
°C/W
MTB280N15N6
CYStek Product Specification
CYStech Electronics Corp.
Ordering Information
Device
MTB280N15N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 2/8
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
Electrical
Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
Min.
150
-
1
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
288
299
3.3
298
32
19
5.2
16.2
20.8
15.6
8.1
1
1.9
-
-
0.8
45
16
Max.
-
-
2.5
±100
1
10
360
400
-
-
-
-
-
-
-
-
-
-
-
1.7
5
1.2
-
-
Unit
V
V/℃
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25
℃
, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=120V, V
GS
=0V, Tj=25℃
V
DS
=120V, V
GS
=0V, Tj=55℃
I
D
=1.5A, V
GS
=10V
I
D
=1.5A, V
GS
=4.5V
V
DS
=15V, I
D
=1A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
t
d(ON)
-
t
r
-
t
d(OFF)
-
t
f
-
Qg
-
Qgs
-
Qgd
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*t
rr
-
Q
rr
-
pF
V
DS
=30V, V
GS
=0V, f=1MHz
ns
V
DS
=75V, I
D
=1A, V
GS
=10V, R
G
=6Ω
nC
V
DS
=75V, I
D
=1.7A, V
GS
=10V,
A
V
ns
nC
I
S
=1.7A,V
GS
=0V
I
F
=1.7A,V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB280N15N6
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
8
7
I
D
, Drain Current(A)
6
5
4
3
2
1
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
V
GS
=2.5V
3V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 3/8
Brekdown Voltage vs Ambient Temperature
1.6
10V, 9V,8V,7V,6V,5V,4V
3.5
1.4
1.2
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250
μ
A,
V
GS
=0V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
1000
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=4.5V
0.8
0.6
Tj=150°C
V
GS
=10V
0.4
0.2
100
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
1000
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
800
600
400
200
0
0
2
I
D
=1.5A
V
GS
=10V, I
D
=1.5A
2
1.6
1.2
0.8
R
DS(ON)
@ Tj=25°C : 288 mΩ
0.4
4
6
8
V
GS
, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB280N15N6
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
1000
Ciss
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 4/8
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
I
D
=1mA
Capacitance---(pF)
100
C
oss
1
0.8
0.6
0.4
I
D
=250μA
10
Crss
1
0
10
20 30
40
50
60 70
V
DS
, Drain-Source Voltage(V)
80
90
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
V
DS
=10V
Gate Charge Characteristics
G
FS
, Forward Transfer Admittance(S)
10
V
GS
, Gate-Source Voltage(V)
8
6
4
2
V
DS
=30V
V
DS
=75V
V
DS
=120V
1
V
DS
=15V
0.1
Pulsed
Ta=25°C
I
D
=1.7A
0.01
0.001
0
0.01
0.1
I
D
, Drain Current(A)
1
10
0
2
4
6
8
Total Gate Charge---Qg(nC)
10
Maximum Safe Operating Area
10
R
DS(ON)
Limited
100
μ
s
Maximum Drain Current vs Junction Temperature
2
1.8
I
D
, Maximum Drain Current(A)
1ms
10ms
100ms
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
T
A
=25°C, V
GS
=10V, R
θJA
=62.5°C/W
I
D
, Drain Current(A)
1
0.1
1s
T
A
=25°C, Tj(max)=150°C,
V
GS
=10V, R
θ
JA
=62.5°C/W
Single Pulse
0.01
DC
0.001
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB280N15N6
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
8
500
V
DS
=10V
Spec. No. : C874N6
Issued Date : 2016.05.10
Revised Date :
Page No. : 5/8
Single Pulse Maximum Power Dissipation
Peak Transient Power (W)
7
450
400
350
300
250
200
150
100
50
0
0.0001 0.001
T
J(MAX)
=150°C
T
A
=25°C
R
θ
JA
=62.5°C/W
I
D
, Drain Current (A)
6
5
4
3
2
1
0
0
1
2
3
4
V
GS
, Gate-Source Voltage(V)
Power Derating Curve
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
T
A
, Ambient Temperature(℃)
140
160
5
0.01
0.1
1
Pulse Width(s)
10
100
1000
Power Derating Curve
4
P
D
, Power Dissipation(W)
P
D
, Power Dissipation(W)
Mounted on FR-4 board
with 1 in
²
pad area
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
20
40
60
80 100 120
T
C
, Case Temperature(℃)
140
160
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.R
θ
JA
(t)=r(t)*R
θJA
2.Duty Factor, D=t
1
/t
2
3.T
JM
-T
A
=P
DM
*R
θ
JA
(t)
4.R
θJA
=62.5
°C/W
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t
1
, Square Wave Pulse Duration(s)
MTB280N15N6
CYStek Product Specification
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
