CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 1/9
MTN2N65BJ3
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
C
=100°C
R
DS(ON)
@V
GS
=10V, I
D
=1A
650V
2A
1.3A
3.9Ω(typ)
Applications
•
Open Framed Power Supply
•
Adapter
•
STB
Symbol
MTN2N65BJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G
D S
Ordering Information
Device
MTN2N65BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2N65BJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
A
=25℃)
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=2A, V
DD
=50V, L=5mH, R
G
=25
Ω
, starting T
J
=+25
℃
.
3
.
I
SD
≤1.8A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting T
J
=+25
℃
.
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
E
AR
dv/dt
T
L
P
D
Tj, Tstg
650
±30
2.0
1.3
8.0
10
2
4.4
4.5
300
1.14
44
0.35
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
2.8
110
Unit
°C/W
°C/W
MTN2N65BJ3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
650
-
2.0
-
-
-
-
-
-
0.7
-
2.8
-
-
-
3.9
11.4
2.3
5.7
8.4
8.4
21.2
11.6
324
37
19
3.4
-
-
0.79
252
653
-
-
4.0
-
±
100
1
10
5.5
17
-
-
16.8
16.8
42.4
23.2
486
56
29
-
2
8
1.5
-
-
V
V/°C
V
S
nA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 3/9
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=1A
V
GS
=
±
30V
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=1A
nC
I
D
=2A, V
DD
=520V, V
GS
=10V
V
DD
=325V, I
D
=1.8A, V
GS
=10V,
R
G
=25
Ω
ns
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=1A, V
GS
=0V
V
GS
=0, I
F
=1.8A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Recommended soldering footprint
MTN2N65BJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
4
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
1.1
1
0.9
0.8
0.7
0.6
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
I
D
,
Drain Current(A)
3
2
15V,14V,13V,12V,11V,10V,9V,8V,7V,6V
1
V
GS
=5V
V
GS
=4V
I
D
=250μA,
V
GS
=0V
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
0
0
10
20
30
40
V
DS
,
Drain-Source Voltage(V)
50
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
10
R
DS(on)
,
Static Drain-Source On-State
Resistance(Ω)
V
GS
=10V
2.5
2
I
D
,
Drain Current(A)
1.5
1
0.5
0
T
A
=25°C
V
DS
=10V
8
6
4
2
0
0.001
0.01
0.1
1
I
D
,
Drain Current(A)
10
0
2
4
6
8
V
GS
,
Gate-Source Voltage(V)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
10
20
R
DS(on)
,
Static Drain-Source On-
State Resistance(Ω)
Ta=25°C
VGS=0V
I
F
,
Forward Current(A)
15
1
Tj=150°C
0.1
Tj=25°C
0.01
10
5
I
D
=1A
0
0
2
4
6
8
V
GS
,
Gate-Source Voltage(V)
10
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
,
Source Drain Voltage(V)
MTN2N65BJ3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
1000
R
DS(on)
, Normalized
Static Drain-Source
On-state Resistance
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 5/9
Static Drain-Source On-resistance vs Ambient Temperature
Ciss
Capacitance-(pF)
100
Coss
10
Crss
f=1MHz
I
D
=1A,
V
GS
=10V
1
0
5
10
15
20
25
V
DS
,
Drain-to-Source Voltage(V)
30
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
Maximum Safe Operating Area
10
Gate Charge Characteristics
10
100μs
1ms
V
DS
=130V
V
GS
, Gate-Source Voltage(V)
8
V
DS
=325V
6
I
D
, Drain Current(A)
10ms
1
100ms
1s
Operation in this area is
limited by R
DS(ON)
DC
4
V
DS
=520V
2
I
D
=2A
0.1
0.01
1
10
100
V
DS
, Drain-Source Voltage(V)
1000
0
0
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
2.5
Threshold Voltage vs Junction Tempearture
1.4
1.2
I
D
=1mA
I
D
, Maximum Drain Current(A)
2
V
GS(th)
, Normalized Threshold Voltage
1.5
1
0.8
0.6
0.4
0.2
I
D
=250μA
1
0.5
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN2N65BJ3
CYStek Product Specification
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