1N5333B thru 1N5363B
Transient Voltage Suppressor
Breakdown Voltage 3.3 to 30 Volts
CASE: R-6
Features
Extensive Voltages selection from 3.3 to 30V
Silicon 5.0 Watt Zener Diodes
Hermetically sealed glass body construction
Withstands surge stresses
Application
Voltage stabilization
Regulates voltage over a broad operating current
and temperature range
Flexible axial-lead mounting terminals
High specified maximum current (I
ZM
) when
adequately heat sunk
Minimal changes of voltage versus current as
specified by voltage regulation(△V
Z
)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
@
Symbol
P
M(AV)
V
F
R
θJL
R
θJA
T
J,
T
STG
Conditions
印
打
Mechanical Data
Case:
Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals:
Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking:
Part number
Polarity:
Cathode indicated by band
Weight:
2.1g（Approximately）
效
无
25 C unless otherwise specified
O
Value
5.0
1.47
1.2
25
85
-65 to +150
Unit
W
W
V
℃/W
℃/W
℃
Steady state power at T
L
≤ 25℃ 0.375”(10mm) from body
Steady state power at T
A
=25℃ when mounted on FR4 PC described for
thermal resistance (also see Fig.1)
Maximum instantaneous forward voltage at 1.0A
Thermal resistance junction to lead
Thermal resistance junction to ambient
Operating and Storage Temperature
Document Number: 1N5333B thru 1N5363B
Feb.29, 2012
www.smsemi.com
1
1N5333B thru 1N5363B
Electrical Characteristics @ 25° (Unless Otherwise Noted)
C
Maximum
Dynamic
Knee
Impedance
Z
Zk
@
1.0mA
(A,B,C,D
Suffix)
Z
ZK
(Ohms)
400
500
500
500
450
400
400
300
200
200
200
200
200
150
125
125
125
100
75
75
75
75
75
75
75
75
100
110
120
130
140
Test
Voltage
(Non-
Suffix
&A
Suffix)
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.0
4.9
5.4
5.9
6.25
6.6
7.2
8.0
8.6
9.4
10.1
10.8
11.5
12.2
13.0
13.7
14.4
15.8
17.3
18.0
19.4
20.1
21.6
Maximum
Regulator
Current
I
ZM
(B,C,D
Suffix)
I
ZM
(mA)
1440
1320
1220
1100
1010
930
865
790
765
700
630
580
545
520
475
430
395
365
340
315
295
280
264
250
237
216
198
190
176
170
158
Maximum
Voltage
Regulation
(△ V
Z
)
(A,B,C,D
Suffix)
△
V
Z
(V)
0.85
0.80
0.54
0.49
0.44
0.39
0.25
0.19
0.10
0.15
0.15
0.20
0.20
0.22
0.22
0.25
0.25
0.25
0.25
0.25
0.30
0.35
0.40
0.40
0.40
0.45
0.55
0.55
0.60
0.60
0.60
Maximum
Dynamic
Impedance
(A&B
Suffix)
Z
ZT
(Ohms)
3.0
2.5
2.0
2.0
2.0
1.5
1.0
1.0
1.0
1.0
1.5
1.5
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
3.0
3.0
3.5
3.5
4.0
5.0
6.0
8.0
Type
Number
Regulator
Voltage
V
Z
@ I
ZT
Test
Current
Maximum
Reverse
Current
I
R
@ V
R
Test
Voltage
(B,C,D
Suffix)
Maximum
Surge
Current
(I
ZSM
)
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
Note:
1. Devices listed above with B suffix have
±5%
tolerance, A suffix designates
±10%
tolerance, C suffix designates
±2%
tolerance, and D suffix designates
±1%
tolerance. No suffix designates
±20%.
2. Zener voltage (V
Z
) is measured at TL=25° (+8,-2° Voltage measurement to be performed at 40±10 milliseconds after
C
C).
application of dc current.
3. The zener impedance is derived from 1 kH
Z
ac voltage resulting from an ac current modulation having an rms value equal to
10% of the dc zener current (I
ZT
or I
ZK
) superimposed on I
ZT
or I
ZK
.
4. The maximum current (I
ZM
) shown is for a
±5%
tolerance devices. The I
ZM
for other tolerances can be calculated using the
formula: I
ZM
=P/V
ZM
where V
ZM
is the V
Z
at the high end of the voltage tolerance specified and P is the rated power for the
method of mounting.
5. The surge current (I
ZSM
) is specified as the maximum peak of a non-recurrent half-sine wave of 8.3ms duration.
6. Voltage regulation (△
VZ
) is the difference between the voltage measured at 10% and 50% of I
ZM
.
印
打
2
V
Z
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
I
ZT
(mA)
380
350
320
290
260
240
220
200
200
175
175
150
150
150
125
125
100
100
100
75
75
70
65
65
65
50
50
50
50
50
40
I
R
(µA)
300
150
50
10
5.0
1.0
1.0
1.0
1.0
10
10
10
10
7.5
5.0
5.0
2.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
效
无
www.smsemi.com
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.0
5.2
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.9
10.6
11.5
12.2
12.9
13.7
14.4
15.2
16.7
18.2
19.0
20.6
21.2
22.8
I
ZSM
(A)
20.0
18.7
17.6
16.4
15.3
14.4
13.4
12.7
12.4
11.5
10.7
10.0
9.5
9.2
8.6
8.0
7.5
7.0
6.7
6.3
6.0
5.8
5.5
5.3
5.1
4.7
4.4
4.3
4.1
3.9
3.7
Document Number: 1N5333B thru 1N5363B
Feb.29, 2012
1N5333B thru 1N5363B
Characteristic Curve
5.0
P
d
, Maximum Power Dissipation (W)
C
J
– Junction Capacitance (pF)
10
4
1N5335B
1N5338B
4.0
10
3
1N5342B
1N5344B
3.0
T
L
2.0
10
2
1.0
T
A
0
0
50
100
150
Lead or Ambient Temperature (℃)
200
10
Fig.1 Power Derating Curve
10
C
J
– Junction Capacitance (pF)
4
10
3
1N5350B
1N5357B
10
10
0.1
印
打
2
效
无
0.1
1.0
10
VR – Reverse Voltage (V)
100
Fig.2 Capacitance vs. Voltage for
Representative Types
0.1
1.0
10
VR – Reverse Voltage (V)
100
Fig.3 Capacitance vs. Voltage for
Representative Types
Document Number: 1N5333B thru 1N5363B
Feb.29, 2012
www.smsemi.com
3
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
