ISDB20
DESCRIPTION
3.9
Dimensions in mm
8
7
6
5
7.62
6.4
ISDB20
1
2
3
4
1
2
3
7.62
6
5
4
9.78
3.4
The ISDB20 is a 2-Form B solid state relay in
an 8 pin DIL package. The ISDB20 utilises
MOSFET technology that is optically coupled
to a highly efficient GaAlAs infrared light
emitting diode.
6.9
0.47
7.62
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High load Voltage (200V)
l
High Isolation Voltage (3.75kV
RMS
)
l
No moving parts
l
High reliability
l
Arc-Free without snubber circuits
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
Telecommunications
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 100°C
Operating Temperature
-40°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
OUTPUT MOSFET
Load Voltage ( AC peak or DC )
Continous Load Current
Peak Current ( 10mS )
200V
100mA
250mA
50mA
5V
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
6/12/06
ISOCOM COMPONENTS ASIA LTD
Hong Kong Office, 1712-1713
Laurels Industrial Centre, 32 Tai Yau Street,
San Po Kong, Kowloon, Hong Kong.
Tel: +852 2995 9217 Fax : +852 8161 6292
e-mail sales@isocom.com.hk
DC93089
0
.
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
On state Resistance ( Ron )
Off state Leakage Current (I
LK
)
Turn-On Time ( Ton )
Turn-Off Time ( Toff )
Ouput Capacitance
0.03
0.4
100
17
MIN
1.0
TYP MAX UNITS TEST CONDITION
1.4
10
V
µ
A
I
F
= 10mA
V
R
= 5V
I
F
= 10mA, I
L
= 100mA
I
F
= 0mA, I
V
= 200V
I
F
= 10mA, I
L
= 100mA
I
F
= 10mA, I
L
= 100mA
f = 1MHz
30.0
1
0.5
1.0
Ohm
uA
mS
mS
pF
Coupled
Capacitance
Isolation Voltage
Isolation Resistance
3750
5
1.0
pF
Vrms
Gohm
f = 1MHz
1 minute ( Note 1 )
DC= 500V ( Note 1 )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
6/12/06
DC93089
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
