®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Description
Initial Issue
Delete Icc1 Spec.
Added I Grade Spec.
Revised Test Condition of I
CC
/I
SB1
/I
DR
Revised V
TERM
to V
T1
and V
T2
Revised
FEATURES
&
ORDERING INFORMATION
Lead
free and green package available
to
Green package available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Adding PKG type : 32 TSOP-II
Revised
PACKAGE OUTLINE DIMENSION
in page 8
Revised
PACKAGE OUTLINE DIMENSION
in page 8
Revised
ORDERING INFORMATION
in page 10
Issue Date
Jul.25.2004
Sep.21.2004
Apr.20.2009
Rev. 1.3
Rev. 1.4
Rev. 1.5
Jan.5.2010
May.7.2010
Aug.25.2010
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
0
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L1288 is a 1,048,576-bit high speed
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY61L1288 is well designed for high speed
system application. Easy expansion is provided by
using an active LOW Chip Enable(CE#). The active
LOW Write Enable(WE#) controls both writing and
reading of the memory.
The LY61L1288 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 8/10/12/15ns
Low power consumption:
Operating current : 80/75/70/65mA (TYP.)
Standby current : 0.6mA (TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 8mm x 13.4mm STSOP
32-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY61L1288
LY61L1288
LY61L1288(E)
LY61L1288(E)
LY61L1288(I)
LY61L1288(I)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
-20 ~ 80℃
-20 ~ 80℃
-40 ~ 85℃
-40 ~ 85℃
Vcc Range
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
Speed
8/10ns
12/15ns
8/10ns
12/15ns
8/10ns
12/15ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
0.6mA
80/75mA
0.6mA
70/65mA
0.6mA
80/75mA
0.6mA
70/65mA
0.6mA
80/75mA
0.6mA
70/65mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 - A16
DQ0 – DQ7
CE#
WE#
OE#
V
CC
V
SS
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Power Supply
Ground
A0-A16
DECODER
128Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
1
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A0
A1
A2
A3
CE#
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
WE#
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LY61L1288
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE#
DQ7
DQ6
Vss
Vcc
DQ5
DQ4
A12
A11
A10
A9
A8
STSOP
A0
A1
A2
A3
CE#
DQ0
DQ1
VCC
VSS
DQ2
DQ3
WE#
A4
A5
A6
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-II
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE#
DQ7
DQ6
VSS
VCC
DQ5
DQ4
A12
A11
A10
A9
A8
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
LY61L1288
2
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
Standby Power
Supply Current
SYMBOL
V
CC
V
IH
*2
V
IL
I
LI
I
LO
V
OH
V
OL
I
CC
I
SB
I
SB1
*1
TEST CONDITION
-8/-10
-12/-15
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -4mA
I
OL
= 8mA
-8
-10
-12
-15
CE# = V
IH,
others at V
IH
or V
IL
CE#
≧
V
CC
- 0.2V,
Other pins at 0.2V or V
CC
-0.2V
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA
Other pins at V
IH
or V
IL
MIN.
3.15
3.0
2.0
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
TYP.
3.3
3.3
-
-
-
-
-
-
80
75
70
65
3
0.6
*4
MAX.
3.6
3.6
V
CC
+0.5
0.8
1
1
-
0.4
150
120
100
90
10
3
*5
UNIT
V
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
3
®
LY61L1288
Rev. 1.5
128K X 8 BIT HIGH SPEED CMOS SRAM
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM. LY61L1288 LY61L1288 LY61L1288 LY61L1288 UNIT
-8
-10
-12
-15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Read Cycle Time
t
RC
8
-
10
-
12
-
15
-
ns
Address Access Time
t
AA
-
8
-
10
-
12
-
15
ns
Chip Enable Access Time
t
ACE
-
8
-
10
-
12
-
15
ns
Output Enable Access Time
t
OE
-
4
-
5
-
6
-
7
ns
Chip Enable to Output in Low-Z
t
CLZ
*
2
-
2
-
3
-
4
-
ns
Output Enable to Output in Low-Z t
OLZ
*
0
-
0
-
0
-
0
-
ns
Chip Disable to Output in High-Z t
CHZ
*
-
4
-
5
-
6
-
7
ns
Output Disable to Output in High-Z t
OHZ
*
-
4
-
5
-
6
-
7
ns
Output Hold from Address Change t
OH
3
-
3
-
3
-
3
-
ns
(2) WRITE CYCLE
PARAMETER
SYM. LY61L1288 LY61L1288 LY61L1288 LY61L1288 UNIT
-8
-10
-12
-15
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write Cycle Time
t
WC
8
-
10
-
12
-
15
-
ns
Address Valid to End of Write
t
AW
6.5
-
8
-
10
-
12
-
ns
Chip Enable to End of Write
t
CW
6.5
-
8
-
10
-
12
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
0
-
ns
Write Pulse Width
t
WP
6.5
-
8
-
9
-
10
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
0
-
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
8
-
ns
Data Hold from End of Write Time t
DH
0
-
0
-
0
-
0
-
ns
Output Active from End of Write
t
OW
*
1.5
-
2
-
3
-
4
-
ns
Write to Output in High-Z
t
WHZ
*
-
5
-
6
-
7
-
8
ns
*These parameters are guaranteed by device characterization, but not production tested.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
4
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