®
LY611024
Rev. 1.6
128K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Description
Initial Issue
Delete Icc1 Spec.
Add E/I grade
Revised V
TERM
to V
T1
and V
T2
Revised Test Condition of I
SB1
/I
DR
Added LL Spec.
Revised Test Condition of I
CC
/I
SB
Revised
FEATURES
&
ORDERING INFORMATION
Lead
free and green package available
to
Green package available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Revised
PACKAGE OUTLINE DIMENSION
in page 9/10
Revised
ORDERING INFORMATION
in page 11
Revised
PACKAGE OUTLINE DIMENSION
in page 8
Issue Date
Jul.25.2004
Sep.21.2004
Apr.7.2005
Feb.2.2009
Apr.17.2009
Rev. 1.5
Rev. 1.6
May.7.2010
Aug.25.2010
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
0
®
LY611024
Rev. 1.6
128K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY611024 is a 1,048,576-bit low power CMOS
static random access memory organized as 131,072
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY611024 is well designed for very high speed
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY611024 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 12/15ns
Low power consumption:
Operating current : 50/40mA (TYP.)
Standby current : 1mA (TYP.)
2μA (TYP.) LL -version
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 300 mil SOJ
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY611024
LY611024(E)
LY611024(I)
LY611024(LL)
LY611024(LLE)
LY611024(LLI)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
12/15ns
12/15ns
12/15ns
12/15ns
12/15ns
12/15ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
1mA
50/40mA
1mA
50/40mA
1mA
50/40mA
2µA
50/40mA
2µA
50/40mA
2µA
50/40mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A16
DQ0 – DQ7
DECODER
128Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A16
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
1
®
LY611024
Rev. 1.6
128K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
32
31
30
29
28
Vcc
A15
CE2
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
CE2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
LY611024
SOJ
6
7
8
9
10
11
12
13
14
15
16
27
26
25
24
23
22
21
20
19
18
17
LY611024
TSOP-I/STSOP
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2
®
LY611024
Rev. 1.6
128K X 8 BIT HIGH SPEED CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
V
CC
≧
V
IN
≧
V
SS
I
LI
Output Leakage
V
CC
≧
V
OUT
≧
V
SS,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
Output Low Voltage
V
OL
I
OL
= 8mA
Cycle time = Min.
Average Operating
CE# = V
IL
and CE2 = V
IH
,
I
CC
Power supply Current
I
I/O
= 0mA
Others at V
IL
or V
IH
CE# = V
IH
or CE2 = V
IL
I
SB
Others at V
IL
or V
IH
CE#
≧
V
CC
-0.2V
Standby Power
or CE2
≦
0.2V
Supply Current
I
SB1
CE#
≧
V
CC
-0.2V
or CE2
≦
0.2V
Others at 0.2V or V
CC
-0.2V
MIN.
4.5
2.4
- 0.5
-1
-1
2.4
-
- 12
- 15
-
-
-
Normal
LL
-
-
TYP.
5.0
-
-
-
-
-
-
50
40
3
1
2
*4
MAX.
5.5
V
CC
+0.5
0.8
1
1
-
0.4
80
65
20
5
50
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
3
®
LY611024
Rev. 1.6
128K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY611024-12
MIN.
MAX.
12
-
-
12
-
12
-
6
3
-
0
-
-
6
-
6
3
-
LY611024-15
MIN.
MAX.
15
-
-
15
-
15
-
7
4
-
0
-
-
7
-
7
3
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY611024-12
MIN.
MAX.
12
-
10
-
10
-
0
-
9
-
0
-
7
-
0
-
3
-
-
7
LY611024-15
MIN.
MAX.
15
-
12
-
12
-
0
-
10
-
0
-
8
-
0
-
4
-
-
8
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
4
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