®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Rev. 1.6
Rev. 1.7
Rev. 1.8
Description
Initial Issue
Deleted Icc1 Spec.
Revised Truth Table
Deleted Data Retention Waveform(2)(UB & LB controlled)
Revised the typo in Page 1
Added PKG Type : 48-ball 6mm x 8mm TFBGA
Revised Test Condition of I
SB1
/I
DR
Added I Grade Spec.
Revised V
TERM
to V
T1
and V
T2
Added -20ns Spec.
Added LL Spec.
Revised Test Condition of I
SB
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Revised
PACKAGE OUTLINE DIMENSION
in page 11
Revised
ORDERING INFORMATION
in page 12
Issue Date
Jul.25.2004
Sep.21.2004
Jun.20.2005
Feb.13.2006
Jun.13.2007
Feb.4.2008
Mar.31.2008
Aug.7.2008
Apr.17.2009
Rev. 1.9
Rev. 2.0
May.6.2010
Aug.25.2010
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L6416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L6416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY61L6416 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 8/10/12/15/20ns
Low power consumption:
Operating current : 115/105/95/85/70mA (TYP.)
Standby current :
0.6mA (TYP.)
100µA( (MAX. for 20ns LL version)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Operating
Family
Temperature
0 ~ 70℃
LY61L6416
0 ~ 70℃
LY61L6416
0 ~ 70℃
LY61L6416(LL)
-20 ~ 80℃
LY61L6416(E)
-20 ~ 80℃
LY61L6416(E)
LY61L6416(LLE) -20 ~ 80℃
-40 ~ 85℃
LY61L6416(I)
-40 ~ 85℃
LY61L6416(I)
-40 ~ 85℃
LY61L6416(LLI)
Vcc Range
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
3.15 ~ 3.6V
3.0 ~ 3.6V
3.0 ~ 3.6V
Speed
8/10ns
12/15/20ns
20ns
8/10ns
12/15/20ns
20ns
8/10ns
12/15/20ns
20ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
0.6mA(TYP.)
115/105mA
0.6mA(TYP.)
95/85/70mA
100µA(MAX.)
70mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A15
CE#
DQ0 – DQ15 Data Inputs/Outputs
DECODER
64Kx16
MEMORY ARRAY
A0-A15
WE#
OE#
LB#
UB#
V
CC
V
SS
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
LY61L6416
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
NC
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ4 Vss
DQ9 DQ10 A5
Vss DQ11 NC
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
3
®
LY61L6416
Rev. 2.0
64K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
H
L
L
L
X
X
X
WE# LB#
X
H
H
H
H
H
L
L
L
X
L
X
L
H
L
L
H
L
UB#
X
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
SYMBOL
V
CC
V
IH
*2
V
IL
I
LI
I
LO
V
OH
V
OL
*1
TEST CONDITION
-8/-10
-12/-15/-20
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -4mA
I
OL
= 8mA
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA
Other pins at V
IH
or V
IL
CE# = V
IH,
other pins at V
IH
or V
IL
8/10/12/15/20
CE#
≧
VCC - 0.2V
Others at 0.2V or VCC - 0.2V 20LL
MIN.
3.15
3.0
2.0
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
-
-
TYP.
3.3
3.3
-
-
-
-
*4
MAX. UNIT
3.6
V
3.6
V
VCC+0.3 V
0.8
V
1
µA
1
-
0.4
150
120
100
90
75
10
*5
3
6
100*
µA
V
V
mA
mA
mA
mA
mA
mA
mA
µA
I
CC
-8
-10
-12
-15
-20
Standby Power
Supply Current
I
SB
I
SB1
-
-
115
105
95
85
70
3
0.6
20
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
6. 50µA for special request
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
