HCD65R600T_HCU65R600T Super Junction MOSFET
Dec 2015
HCD65R600T / HCU65R600T
650V N-Channel Super Junction MOSFET
Features
Very Low FOM (R
DS(on)
X Q
g
)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BV
DSS
@T
j,max
I
D
R
DS(on), max
Qg
, Typ
Value
700
7.5
0.6
14
nC
Unit
V
A
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Package & Internal Circuit
D-PAK
(HCD65R600T)
D
I-PAK
(HCU65R600T)
G
TV power & LED Lighting Power
S
G
D
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
T
C
=25
unless otherwise specified
Parameter
Value
650
30
Units
V
V
A
A
A
mJ
W
W
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
7.5
4.7
22
160
2.5
57
-55 to +150
300
(Note 1)
(Note 2)
Single Pulsed Avalanche Energy
Power Dissipation (T
A
= 25
Power Dissipation (T
C
= 25
)*
)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
R
R
JC
JA
JA
Parameter
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
2.2
50
110
Units
/W
* When mounted on the minimum pad size recommended (PCB Mount)
HCD65R600T_HCU65R600T Super Junction MOSFET
Electrical Characteristics
T
J
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 2.5 A
2.5
--
--
0.54
4.5
0.6
V
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, T
J
= 125
V
GS
=
30 V, V
DS
= 0 V
650
--
--
--
--
--
--
--
--
10
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
590
41
6.5
770
54
8.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 520 V, I
D
= 7.5 A
V
GS
= 10 V
V
DS
= 325 V, I
D
= 7.5 A,
R
G
= 25
--
--
--
--
--
--
--
18
20
60
22
14.0
3.2
4.2
46
50
130
54
18.5
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 7.5 A, V
GS
= 0 V
I
S
= 7.5 A, V
GS
= 0 V
di
F
/dt = 100 A/
--
--
--
--
--
--
--
--
300
2.4
7.5
A
22
1.4
--
--
V
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
=3.0A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
3. Pulse Test : Pulse Width
HCD65R600T_HCU65R600T Super Junction MOSFET
Typical Characteristics
20
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
20
-55
o
C
I
D
, Drain Current [A]
15
15
I
D
, Drain Current [A]
25
o
C
10
10
150
o
C
5
* Notes :
1. 300us Pulse Test
2. T
C
= 25
o
C
5
* Notes :
1. V
DS
= 10V
2. 300us Pulse Test
0
0
0
5
10
15
20
25
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.0
R
DS(ON)
[ ],
Drain-Source On-Resistance
1.6
V
GS
= 10V
1.2
I
DR
, Reverse Drain Current [A]
10
0.8
1
V
GS
= 20V
0.4
Note : T
J
= 25 C
o
150
o
C
25
o
C
* Notes :
1. V
GS
= 0V
2. 300us Pulse Test
0.0
0
4
8
12
16
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
10
4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V
GS
, Gate-Source Voltage [V]
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
10
V
DS
= 130V
V
DS
= 325V
V
DS
= 520V
10
3
C
iss
Capacitances [pF]
8
10
2
6
C
oss
C
rss
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
10
1
2
Note : I
D
= 7.5A
10
0
0
1
10
100
0.1
0
3
6
9
12
15
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HCD65R600T_HCU65R600T Super Junction MOSFET
Typical Characteristics
(continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Note :
1. V
GS
= 10 V
2. I
D
= 2.5 A
0.9
Note :
1. V
GS
= 0 V
2. I
D
= 250 A
0.5
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
Figure 8. On-Resistance Variation
vs Temperature
8
10 s
I
D
, Drain Current [A]
1 ms
10 ms
10
0
I
D
, Drain Current [A]
10
1
6
100 s
DC
4
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
2
10
-2
10
-1
10
0
10
1
10
2
10
3
0
25
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
JC
(t), Thermal Response
10
0
D=0.5
0.2
0.1
0.05
* Notes :
1. Z
JC
(t) = 2.2
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
10
-1
0.02
0.01
single pulse
P
DM
t
1
10
-3
10
-2
10
-5
t
2
10
1
10
-4
10
-2
10
-1
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HCD65R600T_HCU65R600T Super Junction MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
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