*,, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MD918, A, B
(SILICON)
MD918F, AF, BF
NPN SILICON
MULTIPLE SILICON ANNULAR TRANSISTORS
. . . designed for UM
at
differential amplifiers, dual high frequency
amplifier!, front end detectors and temperature compensation
applications.
MULTIPLE TRANSISTORS
•^3-aU^
Low Collector-Emitter Saturation Voltage —
VCE(Mt) ~ °
2
We <
M
*
X
> * 'C " 10 mAdc
• DC Current Gain - 50 (Mini
9
Ic = 3.0 mAdc
• High Current-Gain - Bandwidth Product -
fj - 600 MHz S> Ic - 4-0 mAdc
MOC18
MO91«A
MO01IB
C>-»-^r*"
•
STYLtli
n« i coiLEaon
2.IASI
1. EDITTCa
4. OMITTED
» EMrTER
1 MM
J.COUECTOS
B. OHITTEO
JEATtN
run
MAXIMUM RATINGS
Rating
Collector -Emitter Voltage
Collector-Bate Voltage
Emitter Base Voltage
Collector Current - Continuous
Symbol
V
CEO
^«L
JUo
ft
•u
t.40
-—A ^*t
T
c
K
i
Value
Unit
*i
N
r~
C
IS
30
3.0
SO
One Di.
All Die
600
400
3-4Z
228
2.0
1.4
11.4
8.0
Vdc
V
CB
V
EB
Vdc
Vdc
mAdc
IG
PD
560
360
3.14
2.0
P
D
r— inuuaBTiMi—nre
"Hul
*
CAtEatWl?
CT1
V
^p
\ *
Tots' Power Dissipation (? TA * 25°C
MD918.A.B
MD918F,AF,BF
Derate Above 26°C
MD918.A.B
M09t8F.AF.BF
Total Power Dissipation ® TQ - 25°C
MD918.A.B
MD918F,AF,BF
Derate Above 25°C
MD918.A.B
MD918f.AF.BF
Operating and Storage Junction
Temperature Range
mW
n*»/°C
-_IL
1
_ J.
0.
' IT tl»
tn
--!•E
C3
I
nw
•AX
OJ»
-
-JL-1^!
rtK-
CHI
V
^
ftr-
1.4
0.7
8.0
4.0
Tj.T,,,
Watts
MM1IF
M N
IAF
I I
MD91 IBF
mV»/°C
r.
T'
r—
1
~
t
1
1=
1z
1
1
-65 to +200
°C
THERMAL CHARACTERISTICS
All Die
Charactarietic
ThermaJ Resistance, Junction TO
Ambient
MO918,A,B
MO918F.AF.BF
Thermal Resistance, Junction to Case
MD918.A.B
MD918F.AF.BF
Symbol
"ajA<H
if
Unit
One Die
319
500
Equal ^ower
°C/W
292
438
=3'
I—i.U
riz
T'lr
J.
H
-u
1
.
|
"«JC
126
260
Junction to
"c/w
87.6
126
Juno Ion to
Caaa
STYLE 1
PINI U
1.
I
IITTED
. w
™r"«sr
%sr
.
t,10
>K
U4I UM
Coupling Ftctori
MD91B,A,B
MD918F.AF.BF
HI
R
*4A
%
83
7S
40
0
t. E
t. U \tt
7. C
)L LECTOR
1- C
IUECTOH
CAM
tOA^J
: ' ,H
4
^-iF
K
S
Ul
w
till
•V ^
It^V
&
8
-
H -
it Ul
"H
J--U
j« Ja
1C
.
.
'» measured with the device soldered into a typical printed circuit board.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, fnfbrmation furnished
by
N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Oiinlitv
MD918,A.B, MD918F.AF.BF
(continued)
THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE
In multiple chip devices. coupling of h««t httween die occurl.
The junction temperature cm be calculated «i follows:
where: Pryr is the total package power dissipation.
Assuming equal thermal refinance for each die. equation { 1 1
simplifies to
(31
(P
O
,
111
P
D1
Where
A
Tjj is the Chang* in junction temperature of die 1
R
8 1
tnd H»2 '• the thermal resistance of die 1 and die
2
P
D
, and PD j ii th* power diuipetad in die 1 end die 2
k$2 n the thermal coupling between die 1 end die 2
An effective package thermal resistance can be defined a>
follow*:
(2) RSI.EFFI -
For the conditions where PQI • P
D2
, Pryr " 2Po.
equation (31 can be further simplified end by iubstituting into
equation (2) results in
R
»<EFF)
d
Values for th* coupling factors wh*n either the caie or the
ambient is u«ed as a reference are given in the table on page 1.
ELECTRICAL CHARACTERISTICS <T
A
- 25°C unless otherwise noted. I
Symbol
Characteristic
I
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage'
1
'
dC • 3.0 mAdc. I
B
- 01
Collector-Ban Breakdown Voltane
(l
c
- I.OuAdc, I
E
-0)
Emitter-Bat* Breakdown Voltage
(l
E
-10<iAac. Ic-OI
Collector Cutoff Current
(V
C B
- 15 Vdc. I
E
-OI
|V
CB
- 15 Vdc. l£ - 0. T
A
- 150°CI
ON CHARACTERISTICS
DC Current Gain
(I
C
• 3,0 mAdc, VCE • 5.0 Vdc)
Collector-Emitter Saturation Voltage
dc" 10 mAdc, IB- 1.0 Adc)
Base-Emitter Saturation Voltage
(l
c
- 10 mAdc, I
8
- 1.0 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(I
C
• 4.0 mAdc, VCE • 10 Vdc. f - 100 MHz]'
Output Capacitance
(VCB" 10 Vdc, lg-0, f- 100kHz)
Input Capacitance
(V
BE
- O.S Vdc. I
C
- 0, 1 - 100 kHz)
Noise Figure
(1C- 1 0 mAdc. V
CE
- 6.0 Vac. R
s
- 400
n,
f
*
60 MHz)
MATCHING CHARACTERISTICS
DC Current-Gain Ratio'
21
dc - 1-0 mAdc. Vce • 5.0 Vdc)
MD918B.BF
MDS18A.AF
Base-Emitter Voltage Differential
(1C- 1.0 mAdc, VCE-D.O Vdc)
Base-Emitter Voltage Differential Gradient
d
c
- 1 .0 mAdc, V
CE
- S.O Vde,
T
A
--5Sto+12S°CI
MD918B.BF
MD918A.AF
i
|VBE1-VBE2l
MD9188.AF.BF
"T
A
MO918A
Mio
Typ
-
~
-
Max
Unit
Vdc
Vdc
Vdc
BVCEO
BVcBO
BVEBO
15
30
3.0
-
~
~
ICBO
-
-
10
1.0
nAdc
MAdc
-
"FE
v
CE(sat)
50
-
-
165
0.09
0.86
-
0.2
0.9
Vdc
Vdc
v
BE(sat)
*T
Cob
Cib
NF
600
-
^
~
1150
—
1.7
MHz
pF
oF
dB
1.1
1.15
20
6.0
~
"FEl'
h
FE2
0.8
0.9
-
1.0
1.0
IV
B
E1-V
B
E2l
-
-
10
S.O
20
10
mVdc
-
-
(iV/dc
°C
(1) Pulse Test: Pulse Width <300 ui, Duly Cycle <2.0%.
(2) The lowest here reading is taken « hp
E
i for this ratio.
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