, D
nc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TWOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100"C
• Designer's Data — IQSS-
v
DS(on)-
v
GS(th)
an
<
i
SOA Specified
at Elevated Temperature
• Rugged — SOA Is Power Dissipation Limited
• Source-to-Dra!n Diode Characterized for Use With Inductive Loads
MTM3N60
MTP3N55
MTP3N60
TMOS POWER FETs
3 AMPERES
'DS(on) = 2.5 OHMS
550 and 600 VOLTS
MAXIMUM RATINGS
Ruling
Drain-Source Voltage
Drain-Gate Voltage
(R
QS
= 1
IWl)
Symbol
Vrjss
MTP3N55
650
550
MTM3N90
MTP3N60
BOO
600
Unit
Vdc
VDGR
VQS
VGSM
ID
IDM
Vdc
Vdc
Vpk
Adc
MTM3NBO
Watts
TO-ZMAA
Gate-Source Voltage — Continuous
— Non-repetitive (t
p
« so
ps)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = JB'C
Derate above 25'C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8* from case for 5 seconds
±20
±40
3
10
76
0,6
-6510 150
PD
Tj-
T
«g
\WC
•c
°C/W
"we
"«JA
1.67
30
62.5
T
L
27G
•c
CO-&OAB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tc - 25-C unless
otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS
-
0, ID = 0.26 mA)
Zero Gate Voltage Drain Current
(V[>s = Rated VDSS. VGS - 0]
(Vos - 0.8 Rated V
DSS
, V
GS
= 0, Tj = 125'C)
Gale-Body Leakage Currant, Forward (VQSF = 20 Vdc, Vps - 01
Gate-Body Leakage Current, Reverse [VQSR ™ 20 Vdc, VQS
=
0)
ON CHARACTERISTICS'
Gate Threshold Voltage
Symbol
VIBRIDSS
MTP3NB5
MTM/MTP3N60
Min
Unit
650
600
-
0.2
Vdc
loss
-
_ -
mAdc
1
'GSSF
100
100
nAdc
nAdc
IGSSR
VQS(th)
-
2
1.6
—
Wos - VGS, 'D = 1
mA
>
Tj = 100'C
Static Drain-Source On-Reslstanee (VGS "
10
Vdc, ID - 1.5 Adc)
Drain-Source On-Voltago (VQ
S
= 101/1
4.5
4
2.5
9
7.5
—
Vdc
'OS(on)
VDS(on)
Ohms
Vdc
(ID - 3 Adc)
(ID - 1.6 Adc, TJ = loo-c)
Forward Transconductance (VDS = IB V, ID » 1.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Vos - 26 V, VQS - 0,
f
- 1 MHi)
See Figure 11
I
9FS
1.6
mhos
Clss
COBS
Cras
—
—
-
1000
300
80
PF
SWITCHING CHARACTERISTICS* (Tj - 100'C)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fell Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE DRAIN DIODE CHARACTERISTICS'
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
INTERNAL PACKAGE INDUCTANCE (TO-204)
Internal Drain Inductance
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Internal Source Inductance
(Measured from the source pin, 0.25" from the package
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO-220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25" from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25" from package to source bond pad.)
•Pul» Test: Pul» Width •: 300
ia.
Duty Cvele e 2%,
Ld
'cf(on)
(VDD - 25 v, ID - 0.6 Rated ID
"gen " 60 ohms)
See Figures 9, 13 and 14
t
r
«d(off)
<f
—
—
—
60
100
180
80
IB
—
-
-
na
—
16 (Typ)
8 (Typ)
8 (Typ)
ID = Rated ID, VQS - 'o vi
See Figure 12
IV
DS
- 0.8 Rated V
D
SS.
Og
Qgs
c-qd
nC
dS - Rated IQ
VGS - 0)
VSD
ton
trr
1.1 (Typ) |
Vdc
Limited by stray Inductance
185 (Typ) |
—
ns
Ld
6 (Typ)
nH
L,
12.5 (Typ)
~
nH
3.5 (Typ)
4.5 (Typ)
-
—
Ls
7.6 (Typ)
V
GS
, GATE-TlKOUnCE VOLTAGE IVOLTSI
1
TJ-2FC
'0 = 3A
^
//
v
\
0
V
fX
,
>%>
/,
>
v/
\/\
V|)0
'VDO
-480
= 300
VDO
= 100
•^_
C|
5S
1
(
I
'
4
8
12
16
21
Oj, TOTAL GATE CHAMEInC!
CQ55
">>^_
^
™
10
M
30
VQ& ORAIN-TO-SOURCE VOLTAGE [VOLTS)
Figure 11. Capacitance Variation
Figure 12. Gate Charge versus
Gate-to-Source Voltage
RESISTIVE SWITCHING
-PULSE WIDTH-
Figure 13. Switching Test Circuit
OUTLINE DIMENSIONS
tO-2iOAB
Figure 14. Switching Waveforms
NOUS:
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STYLE 3.
PWH. GAT6
nuu, tsu
1SOUACE
CASE OWN
i.
CONTFOUJW DMENSOtt INCH.
1 AIL RULES AM) NOTES ASSOCIATED WITH
REFEtUNCEO TO 104AA OUTUhE SIUU APFIV.
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