CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C737N6
Issued Date : 2015.09.24
Revised Date :
Page No. : 1/9
MTN2604N6
Features
•
Simple drive requirement
•
Low on-resistance
•
Small package outline
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@
V
GS
=4.5V, T
A
=25°C
R
DSON@
V
GS
=10V, I
D
=7A
R
DSON@
V
GS
=4.5V, I
D
=5A
30V
7A
19mΩ(typ.)
26mΩ(typ.)
Equivalent Circuit
MTN2604N6
Outline
SOT-26
S
D
D
G：Gate S：Source
D：Drain
Pin #1
D
D
G
Ordering Information
Device
MTN2604N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2604N6
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=4.5V, T
A
=25
°C
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation @ T
A
=25
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1)
Spec. No. : C737N6
Issued Date : 2015.09.24
Revised Date :
Page No. : 2/9
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj ; Tstg
Rth,ja
Limits
30
±20
7
4.4
20
2
0.016
-55~+150
62.5
Unit
V
Continuous Drain Current @V
GS
=4.5V, T
A
=100
°C
(Note 1)
A
W
W /
°C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156
℃
/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width
≤300μs,
Duty Cycle≤2%
Electrical Characteristics
(Tj=25°C, unless otherwise noted)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
Min.
30
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
-
19
26
8
745
51
58
5
8
18
4
7
2.3
2.7
Max.
-
-
3
±100
1
25
27
40
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V/℃
V
nA
μA
mΩ
S
Test Conditions
V
GS
=0V, I
D
=250μA
Reference to 25
℃
, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=24V, V
GS
=0V, Tj=25℃
V
DS
=24V, V
GS
=0V, Tj=70℃
I
D
=7A, V
GS
=10V
I
D
=5A, V
GS
=4.5V
V
DS
=5V, I
D
=7A
pF
V
DS
=25V, V
GS
=0, f=1MHz
ns
V
DS
=15V, I
D
=1A, V
GS
=10V, R
G
=3.3Ω
nC
V
DS
=24V, I
D
=4.8A, V
GS
=4.5V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN2604N6
CYStek Product Specification
CYStech Electronics Corp.
Source Drain Diode
Symbol
*V
SD
*T
rr
Q
rr
Min.
-
-
-
Typ.
0.84
15
7
Max.
1.2
-
-
Unit
V
ns
nC
Spec. No. : C737N6
Issued Date : 2015.09.24
Revised Date :
Page No. : 3/9
Test Conditions
I
S
=4.8A,V
GS
=0V
I
S
=4.8A,V
GS
=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN2604N6
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
20
18
10V
9V
8V
7V
6V
5V
4.5V
4V
Spec. No. : C737N6
Issued Date : 2015.09.24
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
I
D
, Drain Current(A)
16
14
12
10
8
6
4
2
0
0
V
GS
=3.5V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.2
V
GS
=3V
1
0.8
V
GS
=2.5V
0.6
I
D
=250
μ
A,
V
GS
=0V
-75
-50
-25
0
25
50
75
100 125 150 175
0.4
1
2
3
4
5
6
7
8
9
10
V
DS
, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
V
SD
, Source-Drain Voltage(V)
100
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2.5V
V
GS
=3V
V
GS
=4V
V
GS
=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
V
GS
=4.5V
V
GS
=10V
10
0.01
0.1
1
10
I
D
, Drain Current(A)
100
0
2
4
6
8
I
DR
, Reverse Drain Current(A)
10
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
R
DS(on)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
I
D
=5A
I
D
=4A
50
R
DS(on)
, Static Drain-Source On-State
Resistance(mΩ)
45
40
35
30
25
20
15
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
MTN2604N6
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
V
GS(th)
, Normalized Threshold Voltage
10000
Spec. No. : C737N6
Issued Date : 2015.09.24
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A
Capacitance---(pF)
Ciss
1000
C
oss
100
Crss
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
-60 -40 -20
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
G
FS
, Forward Transfer Admittance(S)
10
Gate Charge Characteristics
V
DS
=24V
V
GS
, Gate-Source Voltage(V)
8
V
DS
=20V
V
DS
=15V
1
6
4
0.1
V
DS
=10V
Pulsed
Ta=25°C
2
I
D
=4.8A
0
0
2
4
6
8
10
12
14
16
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
100
μ
s
1ms
10ms
1
100ms
1s
0.1
T
A
=25°C, Tj=150°C,
V
GS
=4.5V, R
θJA
=62.5°C/W
Single Pulse
Maximum Drain Current vs JunctionTemperature
8
I
D
, Drain Current(A)
10
I
D
, Maximum Drain Current(A)
R
DS(ON)
Limited
7
6
5
4
3
2
1
0
25
T
A
=25°C, V
GS
=4.5V, R
θJA
=62.5°C/W
DC
1
10
100
0.01
0.01
0.1
50
V
DS
, Drain-Source Voltage(V)
75
100
125
Tj, Junction Temperature(°C)
150
175
MTN2604N6
CYStek Product Specification
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
