CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C716FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 1/ 10
MTN5N65FP
Description
BV
DSS
: 650V
R
DS(ON)
: 2Ω (typ.)
I
D
: 5A
The MTN5N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Fast Switching Characteristic
•
Insulating package, front/back side insulating voltage=2500V(AC)
•
RoHS compliant package
Applications
•
Adapter
•
Switching Mode Power Supply
Symbol
MTN5N65FP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
MTN5N65FP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C716FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 2/ 10
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=5A, V
DD
=50V, L=6mH, R
G
=25
Ω
, starting T
J
=+25
℃
.
3. I
SD
≤5A,
dI/dt≤100A/μs, V
DD
≤BV
DSS
, starting T
J
=+25℃.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
P
D
Tj, Tstg
650
±30
5*
3*
20*
81
5
3.8
4.5
300
38
0.3
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
3.3
62.5
Unit
°C/W
°C/W
MTN5N65FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
650
-
2.0
-
-
-
-
-
-
0.65
-
2.8
-
-
-
2
15.2
3.7
6.1
14
28
32
34
823
72.8
14
-
-
-
320
2.3
-
-
4.0
-
±
100
1
10
2.5
-
-
-
-
-
-
-
-
-
-
5
20
1.5
-
-
V
V/°C
V
S
nA
μA
Ω
Min.
Typ.
Max.
Unit
Test Conditions
Spec. No. : C716FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 3/ 10
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=2.75A
V
GS
=
±
30
V
DS
=650V, V
GS
=0
V
DS
=520V, V
GS
=0, Tj=125
°
C
V
GS
=10V, I
D
=2.75A
nC
I
D
=5A, V
DS
=520V, V
GS
=10V
V
DS
=325V, I
D
=5A, V
GS
=10V,
R
G
=25
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
A
V
ns
μC
I
S
=5A, V
GS
=0V
V
GS
=0, I
F
=5A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN5N65FP
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN5N65FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
8
Static Drain-Source On-state
Resistance-R
DS(on)
(Ω)
6V
6
Spec. No. : C716FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 4/ 10
Static Drain-Source On-resistance vs Ambient Temperature
Drain Current - I
D
(A)
6
4
15V
10V
9V
7V
5
4
5.5V
3
2
5V
V
GS
=4.5V
2
I
D
=2.75A,
V
GS
=10V
0
0
10
20
30
Drain-Source Voltage -V
DS
(V)
40
1
-100
-50
0
50
100
Ambient Temperature-Ta(°C)
150
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
8
V
DS
=30V
4
Static Drain-Source On-State
Resistance-R
DS(on)
(Ω)
V
GS
=10V
Ta=25°C
3
Drain Current-I
D(on)
(A)
6
4
V
DS
=10V
2
2
1
0.1
1
Drain Current-I
D
(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
10
0
5
10
15
20
Gate-Source Voltage-VGS(V)
15
100
Body Diode Forward Voltage Variation vs Source
Current and Temperature
V
GS
=0V
Reverse Drain Current-I
DR
(A)
Static Drain-Source On-State
Resistance-R
DS(ON)
(Ω)
Ta=25°C
I
D
=2.75A
10
10
Ta=150°C
1
Ta=25°C
5
0
4
6
8
10
Gate-Source Voltage-V
GS
(V)
12
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -V
SD
(V)
MTN5N65FP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
f=1MHz
Drain-Source Breakdown Voltage
BV
DSS
(V)
800
Spec. No. : C716FP
Issued Date : 2010.03.12
Revised Date : 2011.03.30
Page No. : 5/ 10
Brekdown Voltage vs Ambient Temperature
Capacitance-(pF)
1000
Ciss
750
700
100
Coss
650
I
D
=250μA,
V
GS
=0V
600
-100
-50
0
50
100
150
200
Crss
10
0
5
10
15
20
25
Drain-to-Source Voltage-V
DS
(V)
30
Ambient Temperature-Tj(°C)
Maximum Safe Operating Area
100
10μ
Gate Charge Characteristics
12
V
DS
=130V
Gate-Source Voltage---V
GS
(V)
10
8
6
4
2
0
1000
Drain Current --- I
D
(A)
10
100
μ
s
1ms
10ms
V
DS
=325V
V
DS
=520V
1
Operation in this area is
limited by RDS(ON)
Single pulse
Tc=25°C; Tj=150°C
0.01
1
10
100
Drain-Source Voltage -V
DS
(V)
100ms
0.1
DC
I
D
=5A
0
4
8
12
16
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
6
5
4
(A)
3
2
1
0
25
50
75
100
125
150
175
Case Temperature---T
C
(°C)
Maximum Drain Current---I
D
MTN5N65FP
CYStek Product Specification
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