SEMICONDUCTOR
RoHS
NST120F120 / NST120F120-A
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 60A
×
2
Available
RoHS*
COMPLIANT
FEATURES
Fast recovery time characteristic
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Compliant to RoHS
Designed and for industrial level
DESCRIPTION
This SOT-227 modules with FRED rectifier are available
in two basic configurations. They are the antiparallel
and the parallel configurations. The antiparallel configuration
NST120F120-A is used for simple series rectifier and high
voltage application. The parallel configuration NST120F120 is
used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. These modules are intended
for general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper, and
inverters.
CIRCUIT CONFIGURATION
3
4
3
4
2
1
2
1
Parallel
NST120F120
Anti-Parallel
NST120F120-A
APPLICATIONS
Switching power supplies
Inverters
Motor controllers
Converters
Snubber diodes
Uninterruptible power supplies (UPS)
Induction heating
High speed rectifiers
PRODUCT SUMMARY
V
R
V
F
(typical) at 125
ºC
t
rr
(typical)
I
F(DC)
at T
C
per diode
1200
V
2.0
V
38
ns
53A at
100
ºC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
SYMBOL
V
R
per leg
per module
TEST CONDITIONS
VALUES
600
UNITS
V
I
F
I
FSM
V
ISOL
P
D
T
J
, T
Stg
T
c
= 100
ºC
T
J
= 25
ºC
t = 1 minute
53
106
350
2500
337
135
- 55
to
150
V
W
°C
A
RMS isolation voltage, any terminal to case
Maximum power dissipation
T
c
= 25
ºC
T
c
= 100
ºC
Operating junction and storage temperature range
Page 1 of 6
SEMICONDUCTOR
RoHS
NST120F120 / NST120F120-A
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 60
A
1200
-
-
-
-
-
-
2.0
2.3
1.8
2
2.5
60
-
2.5
-
-
250
-
µA
mA
pF
V
Maximum forward voltage
V
FM
I
F
= 120
A
I
F
= 60
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 150°C,
V
R
= V
R
rated
V
R
= 200V
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charage
Q
rr1
Q
rr2
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = -100 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 60A
dI
F
/dt = -200 A/µs
V
R
=800 V
-
-
-
-
-
-
-
-
70
38
400
470
6
13
1200
4000
80
-
ns
-
-
-
-
-
-
nC
A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
(T
J
= 25
ºC unless otherwise specified)
SYMBOL
MIN.
TYP.
MAX.
UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to sink, flat, greased surface
Weight
Mounting torque
RthJC
RthCS
-
-
-
-
-
-
-
0.05
30
-
0.50
0.25
-
-
1.1
g
Nm
ºC/W
K/W
Page 2 of 6
SEMICONDUCTOR
RoHS
NST120F120 / NST120F120-A
RoHS
Nell High Power Products
Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.60
Thermal impedance(°C/W), Z
θJC
0.50
0.40
0.30
0.20
0.10
0
0.9
0.7
0.5
:
P
DM
Note
0.3
t
1
t
2
0.1
0.05
10
-5
SINGLE PULSE
10
-4
10
-3
10
-2
Duty Factor D =t 1 /t 2
Peak T
J
= P
DM
xZ
θ
JC
+T
C
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.1b transient thermal impedance model
RC MODEL
Junction
temp (°C)
0.148
0.006
Power
(watts)
0.238
0.0909
0.174
Case temperature (°C)
0.524
Fig.2 Forward current vs. forward voltage
200
Fig.3 Reverse recovery time vs. current rate of change
600
Reverse recovery time, t
rr
(ns)
180
120A
500
400
300
200
100
0
T = 125°C
J
V = 800V
R
Forward current, I
F
160
140
(A)
120
T
J
=150°C
60A
30A
100
80
60
40
20
0
0
0.5
1
1.5
2
T
J
=-55°C
T
J
=125°C
T
J
=25°C
2.5
3
3.5
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Current rate of change(A/μs), -di
F
/dt
Page 3 of 6
SEMICONDUCTOR
RoHS
NST120F120 / NST120F120-A
RoHS
Nell High Power Products
Fig.4 Reverse recovery charge vs. current rate of change
9000
8000
7000
6000
(nC)
5000
4000
3000
30A
2000
1000
0
0
200
400
600
800
1000
1200
60A
V
R
= 800V
Fig 5. Reverse recovery current vs. current rate of change
50
Reverse recovery current, l
RRM
T
J
= 125°C
T
J
= 125°C
V
R
= 800V
Reverse recovery charge, Q
rr
120A
40
120A
30
(A)
60A
20
30A
10
0
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
Current rate of change (A/μs), -di
F
/dt
Fig6. Dynamic parameters vs. junction temperature
1.4
1.2
trr
Qrr
1.0
0.8
0.6
0.4
0.2
0.0
I
rrm
Fig.7 Maximum average forward current vs. case temperature
90
80
70
60
Duty cycle = 0.5
T
J
=175°C
Dynamic parameters, K f
(Normalized to 1000A/µs)
l F(AV) (A)
Qrr
50
40
30
trr
20
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
600
Junction capacitance, C J
500
400
(pF)
300
200
100
0
1
10
reverse voltage (V), V
R
100 200
Page4 of 6
SEMICONDUCTOR
RoHS
NST120F120 / NST120F120-A
RoHS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
V
R
= 200
V
0.01
Ω
L
= 70
µH
D.U.T.
dIF
/dt
adjust
D
G
IRFP250
S
Fig.10 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dI
F
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
t
rr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rrx
l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during t
b
portion of t
rr
Page 5 of 6
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