OM100Q05CB/RB/DB OM100Q15CB/RB/DB OM100Q30CB/RB/DB OM100Q50CB/RB/DB OM100Q70CB/RB/DB
OM100Q10CB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OM100Q60CB/RB/DB OM100Q80CB/RB/DB
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC
ISOLATED POWER BLOCK PACKAGE
100 Amp, 50 To 800 Volt High Power
Rectifier Module
FEATURES
•
•
•
•
•
•
•
•
•
Rugged Package Design
Very Low Forward Voltage
Very Fast Switching Time
High Current
Center-Tap Configuration
Low Thermal Resistance
Common Cathode Standard
Ceramic Feedthroughs Available
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of products in a hermetic package is specifically designed for use at
power switching frequencies in excess of 100 kHz. The series combines the latest
silicon technology and a package specifically designed for high efficiency/high current
applications. These devices are ideally suited for applications where small size and a
hermetically sealed package are required.
ABSOLUTE MAXIMUM RATINGS
(Per Diode) @ 25°C
Peak Inverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 800 V
Maximum Average D.C. Output Current @ T
C
= 100° C . . . . . . . . . . . . . . . . . . . . . . 50 A
Surge Current (Non-Repetitive 8.3 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700 A
Thermal Resistance, Junction-to-Case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . - 55° C to + 150°C
3.2
SCHEMATIC
1
2
COMMON
ANODE
1
2
OMXXXXXXDB
Common cathode is standard. Contact factory for performance
characteristics for common anode and doubler.
PIN CONNECTION
2
COMMON
CATHODE
OMXXXXXXCB
1
3
OMXXXXXXRB
3
3
DOUBLER
1
2
3
4 11 R0
3.2 - 1
OM100Q05CB/RB/DB - OM100Q80CB/RB/DB
ELECTRICAL CHARACTERISTICS
(Per Diode)
Part Number
PIV
Maximum
Forward Voltage
I
F
= 50 A
(1)
T
j
= 25° C
T
j
= 100° C
Maximum
Reverse Current
@ PIV
T
j
= 25° C T
j
= 100° C
Maximum
Reverse
Recovery
Time
(2)
OM100Q05XX
50 V
.97 V
.85 V
50 ns
OM100Q10XX 100 V
OM100Q15XX 150 V
OM100Q20XX 200 V
OM100Q30XX 300 V
OM100Q40XX 400 V
OM100Q50XX 500 V
OM100Q60XX 600 V
OM100Q70XX 700 V
OM100Q80XX 800 V
1.20 V
1.00 V
25 µA
3.0 mA
75 ns
1.30 V
1.05 V
100 ns
(2) Measured in Circuit:
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A
Notes: (1) Pulse Test:
Pulse Width = 300µs, Duty Cycle 2.0%.
Typical Forward Voltage
50V - 200V
100
100
300V - 500V
100
600V - 800V
I
F
- Instantaneous Forward Current (Amps)
I
F
- Instantaneous Forward Current (Amps)
T
J
= 100°C
I
F
- Instantaneous Forward Current (Amps)
T
J
= 100°C
T
J
= 100°C
T
J
= 25°C
10
T
J
= 25°C
10
T
J
= 25°C
10
.4
.6
.8
1.0
.6
.8
1.0
1.2
.7
.9
1.1
1.3
3.2
V
F
- Instantaneous Voltage (Volts)
V
F
- Instantaneous Voltage (Volts)
V
F
- Instantaneous Voltage (Volts)
Typical Reverse Current
10
Mechanical Outline
2.000
1.500
.250
2 PLCS.
.813
C
E
G
.125 DIA.
4 PLCS.
.324
.375
.875
1.375
1.750
.166 DIA.
3 PLCS.
±.010
.515
MAX.
.050
I
R
- Reverse Current (mA)
1.0
.1
.563
T
J
= 175°C
T
J
= 125°C
.125
.472
.510
.030
±.010
.01
.001
.275
±.010
.375
T
J
= 75°C
.0001
0
TERMINAL 1
T
J
= 25°C
50
100
.100 DIA.
3 PLCS.
.225
% V
R
- Reverse Voltage (Volts)
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
微控制器 MCU
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