SMD Schottky Barrier Rectifiers
CDBAT120-HF Thru. CDBAT1100-HF
Forward current: 1.0A
Reverse voltage: 20 to 100V
RoHS Device
Halogen Free
Features
-Lead less chip form, no lead damage.
-Low power loss, High efficiency.
-High current capability, low VF
-Plastic package has underwriters laboratory
flammability classification 94V-0.
0.090 (2.30)
0.083 (2.10)
2010/DO-214AC
0.181 (4.60)
0.173 (4.40)
x
0.020
(0.50)
Mechanical Data
-Case: Packed with FRP substrate and epoxy underfilled.
-Terminals: Pure Tin plated (Lead-Free),solderable
per MIL-STD-750, method 2026.
-Polarity: Laser cathode band marking.
-Weight: 0.02 gram (approx).
-Packing: 3,000 pieces per 7” reel.
0.045 (1.15)
0.030 (0.75)
0.046 (1.16)
0.034 (0.86)
0.045 (1.15)
0.030 (0.75)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings
(At Ta=25°C, unless otherwise noted)
Parameter
Non-repetitive peak reverse voltage
Average forward current
Peak forward surge current
@8.3ms single half sine-wave
Operating junction temperature range
Storage temperature
Symbol
V
RM
I
F(AV)
I
FSM
T
J
T
STG
CDBAT120-HF
20
CDBAT140-HF CDBAT160-HF CDBAT1100-HF
Unit
40
1.0
30
60
100
V
A
A
-55 to +150
-55 ~ +150
°C
°C
-55 to +125
Electrical Characteristics
(At Ta=25°C, unless otherwise noted)
Parameter
Conditions
I
F
=0.1A
I
F
=0.5A
I
F
=1.0A
Forward voltage (Note1)
I
F
=0.1A
I
F
=0.5A
I
F
=1.0A
I
F
=0.1A
I
F
=0.5A
I
F
=1.0A
Reverse peak reverse current (Note1)
Junction capacitance
Type
CDBAT120-HF
/
CDBAT140-HF
Symbol
Min.
-
-
-
-
-
-
-
-
-
Typ.
0.34
0.41
0.47
0.38
0.48
0.60
0.45
0.63
0.76
0.02
110
88
28
Max.
-
-
0.50
-
-
0.70
-
-
0.85
0.20
-
-
-
Unit
CDBAT160-HF
V
F
V
CDBAT1100-HF
V
R
=Max.V
RRM
, Ta=25°C
V
R
=4V, f=1.0MHz
Junction to ambient (Note 2)
I
RRM
Cj
R
ΘJA
R
ΘJL
-
-
-
-
mA
pF
ºC/W
ºC/W
Thermal resistance
Junction to lead (Note 2)
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB042
REV:A
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
RATING AND CHARACTERISTIC CURVES (CDBAT120-HF Thru. CDBAT1100-HF)
Fig.1- Forward current derating curve
1.0
30
8.3ms
Single Half Sine-Wave
Fig.2- Maximum Non-repetitive peak
forward surge current
Average forward rectified current, (A)
Peak forward surge current, (A)
160
180
25
F
00-H
AT11
CDB
Thru
0-HF
AT16
CDB
0-HF
AT14
CDB
Thru
0-HF
AT12
CDB
20
0.5
15
10
Resistive or inductive load
P.C.B Mounted on 0.2*0.2”(5.0*5.0mm)
Copper pad areas
5
0
0
60
80
100
120
140
0
1
10
100
Lead temperature, (°C)
Number of cycles at 60Hz
10
Ta=25°C
Instantaneous reverse voltage, (mA)
Fig.3- Typical Instantaneous Forward
Characteristics
Instantaneous forward current, (A)
Fig.4- Typical reverse characteristics
100
1.00
10
o
TJ=100 C
1.0
1.10
0.1
o
TJ=25 C
0.01
CDBAT120-HF~140-HF
CDBAT160-HF
CDBAT1100-HF
0.01
0.001
0.001
0
20
40
60
80
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Forward voltage, (V)
Percent of rated peak reverse voltage, (%)
Fig.5- Typical junction capacitance
400
T
J
=25 C
f=1MHz
V
sig
=50mVP-P
O
Junction capacitance, (pF)
100
10
0.1
1
10
100
Reverse voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-JB042
REV:A
Page 2
Comchip Technology CO., LTD.
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