MIG100J101H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG100J101H
High Power Switching Applications
Motor Control Applications
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Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage &
over-temperature) in one package.
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The electrodes are isolated from case.
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High speed type IGBT : V
CE (sat)
= 2.5 V (Max.)
t
off
= 3.0 µs (Max.)
t
rr
= 0.30 µs (Max.)
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Outline : TOSHIBA 2-110A1A
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Weight : 520 g
Equivalent Circuit
1.
7.
GND (U)
GND (W)
2. IN (U)
8. IN (W)
14. IN (Y)
3.
9.
V
D
(U)
V
D
(W)
4. GND (V)
10. GND (L)
16. FO
5.
IN (V)
6. V
D
(V)
12. OPEN
11. V
D
(L)
13. IN (X)
15. IN (Z)
1
2001-05-29
MIG100J101H
Maximum Ratings
(T
j
= 25°C)
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Module
Storage temperature range
Isolation voltage
Screw torque
Condition
P-N power terminal
―
T
c
= 25°C, DC
T
c
= 25°C, DC
T
c
= 25°C
―
V
D
-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
AC 1 minute,
M5
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
TC
T
stg
V
ISO
―
Ratings
450
600
100
100
300
150
20
20
20
14
−20
~ +100
−40
~ +125
2500
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
N·m
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
= 600 V
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
―
0V
(Note 1)
―
―
―
Typ.
―
―
2.0
2.0
2.1
1.0
1.7
0.2
0.1
Max
1
20
2.5
―
3.3
2.0
3.0
0.5
0.3
µs
V
V
Unit
mA
Collector-emitter saturation
voltage
Forward voltage
V
CE (sat)
V
F
t
on
V
D
= 15 V, I
C
= 100 A T
j
= 25°C
V
IN
= 15 V
→
0 V
T
j
= 125°C
I
F
= 100 A
V
CC
= 300 V, I
C
= 100 A
V
D
= 15 V, V
IN
= 15 V
Inductive load
Switching time
t
off
t
f
t
rr
2
2001-05-29
MIG100J101H
b.
Control Stage
(T
j
= 25°C)
Characteristic
Control circuit
current
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
V
D
= 15 V
V
D
= 15 V, I
C
= 100 mA
V
D
= 15 V, I
C
= 100 mA
V
D
= 15 V
Test Condition
Min
―
―
1.3
2.2
8
―
160
Typ.
8
24
1.5
2.5
10
―
200
Max
―
―
1.7
2.8
12
1
―
Unit
mA
V
V
mA
Input-on signal voltage
Input-off signal voltage
Fault output
current
Over current
protection
trip level
Short current
protection
trip level
Protection
Normal
Inverter
V
D
= 15 V, T
j
= 125°C
A
Inverter
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
= 15 V, T
j
= 125°C
V
D
= 15 V
Case temperature
240
―
110
―
300
5
118
98
12.0
12.5
2
―
―
125
―
12.5
―
3
A
µs
°C
Over current cut-off time
Over
temperature
protection
Control supply
under voltage
protection
Trip level
Reset level
Trip level
Reset level
―
V
D
= 15 V
11.0
―
1
V
ms
Fault output pulse width
3
2001-05-29
MIG100J101H
c.
Thermal Resistance
(T
j
= 25°C)
Characteristic
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R
th (j-c)
R
th (c-f)
Test Condition
Inverter IGBT stage
Inverter FRD stage
Compound is applied
Min
―
―
―
Typ.
―
―
0.05
Max
0.418
1.000
―
Unit
°C / W
°C / W
Note 1: Switching time test circuit & timing chart
4
2001-05-29