MMBT3904WT1, NPN,
SMMBT3904WT1, NPN,
MMBT3906WT1, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
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COLLECTOR
3
1
BASE
2
EMITTER
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
3
SC−70 (SOT−323)
CASE 419
STYLE 3
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Collector
−Base
Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Emitter
−Base
Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Collector Current
−
Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Symbol
V
CEO
Value
40
−40
60
−40
6.0
−5.0
200
−200
Unit
Vdc
MARKING DIAGRAM
xx M
G
G
1
V
CBO
Vdc
V
EBO
Vdc
xx
I
C
mAdc
M
G
= AM for MMBT3904WT1,
SMMBT3904WT
= 2A for MMBT3906WT1
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Unit
mW
°C/W
°C
*Date Code orientation may vary depending
upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
@T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
ORDERING INFORMATION
Device
MMBT3904WT1G
Package
SC−70/
SOT−323
(Pb−Free)
SC−70/
SOT−323
(Pb−Free)
SC−70/
SOT−323
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
SMMBT3904WT1G
MMBT3906WT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 8
1
Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
(I
C
=
−10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
(I
E
=
−10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
=
−30
Vdc, V
EB
=
−3.0
Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
=
−0.1
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−50
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
MMBT3904WT1, SMMBT3904WT1
h
FE
40
70
100
60
30
60
80
100
60
30
−
−
−
−
0.65
−
−0.65
−
−
−
300
−
−
−
−
300
−
−
0.2
0.3
−0.25
−0.4
0.85
0.95
−0.85
−0.95
−
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
V
(BR)CEO
40
−40
60
−40
6.0
−5.0
−
−
−
−
−
−
−
−
−
−
50
−50
50
−50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
Vdc
I
BL
nAdc
I
CEX
nAdc
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
V
CE(sat)
Vdc
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
V
BE(sat)
Vdc
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
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2
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
=
−10
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
=
−5.0
Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(V
EB
=
−0.5
Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
f
T
300
250
−
−
−
−
1.0
2.0
0.5
0.1
100
100
1.0
3.0
−
−
4.0
4.5
8.0
10.0
10
12
8.0
10
400
400
40
60
MHz
Symbol
Min
Max
Unit
C
obo
pF
C
ibo
pF
h
ie
k
W
h
re
X 10
−
4
h
fe
−
h
oe
mmhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
(V
CE
=
−5.0
Vdc, I
C
=
−100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Condition
(V
CC
= 3.0 Vdc, V
BE
=
−
0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
=
−3.0
Vdc, V
BE
= 0.5 Vdc)
MMBT3906WT1
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(I
C
=
−10
mAdc, I
B1
=
−1.0
mAdc)
MMBT3906WT1
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
=
−3.0
Vdc, I
C
=
−10
mAdc)
MMBT3906WT1
(I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
=
−1.0
mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
NF
−
−
5.0
4.0
dB
Symbol
t
d
Min
−
−
−
−
−
−
−
−
Max
35
35
35
35
200
225
50
75
Unit
ns
Rise Time
t
r
Storage Time
t
s
ns
Fall Time
t
f
MMBT3904WT1, SMMBT3904WT1
+3 V
+10.9 V
10 k
0
- 0.5 V
< 1 ns
C
S
< 4 pF*
- 9.1 V
< 1 ns
1N916
C
S
< 4 pF*
275
+3 V
+10.9 V
275
10 k
DUTY CYCLE = 2%
300 ns
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
http://onsemi.com
3
Figure 2. Storage and Fall Time
Equivalent Test Circuit
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
500
I
C
/I
B
= 10
300
200
t r, RISE TIME (ns)
100
70
50
30
20
10
7
5
1.0
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
V
CC
= 40 V
I
C
/I
B
= 10
500
300
200
100
70
50
30
20
10
7
5
MMBT3904WT1
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
TIME (ns)
t
r
@ V
CC
= 3.0 V
40 V
15 V
2.0 V
50 70 100
200
Figure 3. Turn
−On
Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
1.0
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 20
I
C
/I
B
= 10
100
70
50
30
20
10
7
5
1.0
I
C
/I
B
= 10
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
MMBT3904WT1
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
MMBT3904WT1
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
Figure 7. Noise Figure
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4
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP
MMBT3904WT1, SMMBT3904WT1
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
MMBT3904WT1
200
h fe , CURRENT GAIN
100
50
MMBT3904WT1
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 9. Current Gain
20
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
MMBT3904WT1
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
MMBT3904WT1
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
V
CE
= 1 V
hFE, DC CURRENT GAIN
T
J
= 150°C
25°C
- 55°C
100
MMBT3904WT1
10
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 13. DC Current Gain
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