-Conauetoi Lpioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16010, MJ16012, MJH16010, MJH16012
5-A
Switchesjf \r Transistors
High-Voltage N-P-N Types for Off-Line Power Supplies
and Other High-Voltage Switching Applications
Features:
•
Fast switching speed
•
High-voltage ratings.
V
c(v
- 850 V
•
Low v
ci
lsat> at l
c
- IDA
Applications:
I
Oil-Una power supplies
I High-voltage inverters
I
Switching regulators
«c»- irstt
JEDEC TO-204AA
(200 mil diameter pin holallon)
TERMINAL DESIGNATIONS
• (FLAN9EI
MJIB010
MJI6012
COLLECTOR
,
FLANG*
MJH16010
MJH16012
TOP view
JEDEC TO-218AC
The MJ16010. MJ16012, MJH16010. and MJH16012
SwitchMax II series of silicon n-p-n power transistors fea-
ture high voltage capability, last switching speeds, and low
saturation voltages, together with high safe-operating-area
(SOA) ratings They are specially designed for off-line power
supplies, converter circuits, and pulse-width-modulated
regulators These high-voltage, high-speed transistors are
tested for parameters that are essential to the design of
high-power switching circuits Switching times, including
MAXIMUM RATINGS,
Absolute-Maximum Values:
inductive turn-off time, and saturation voltages are specified
at 100°C to provide informatton necessary for worst-case
design.
The MJ16010 and MJ16012 transistors are supplied in steer
JEDEC TO-204AA hermetic packages. The MJH16010 and
MJH16012 transistors are supplied in JEDEC TO-218AC
plastic packages.
MJ16010
MJ16012
flflfi
MJH16010
MJH16012
V
V
V
A
A
A
A
A
W
W
'
VEBG
• •
l
e
(sat) . . .
m
5
fl
fi
in
1S .
P
T
@ T
C
= 25°C
17S
135
R3.R
@T^ = ioo°c
T
c
above 25° C, derate linearly
mn
-A.S In 9nO
1ftfi
-ftft tn 1fin
_235.
W/"C
°C
TL
At distance £ 1/8" in (3.17 mm) from
seating plane for 10 s max
At distance > 1/16" in. (1 58 mm) from
seating plane for 10 s max
TSJC
•
.235.
-
1.
. 0.93 .
°c/w
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ16010, MJ16012, MJH16010. MJH1fi019
MJ16010, MJH16010
ELECTRICAL CHARACTERISTICS IT
C
' 2
5
°C
unlass
otherwise noted)
Characteristic
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
|l
c
» 100mA. 18 = 0)
Collector Cutoff Current
IVcEV -- 850 Vdc. V
8E(off)
= 1
&
Vdc|
| VCEV = 850 Vdc, V
8E(0
|f )
-
1 5 Vdc. T
C
= 1 00°C|
Collector Cutoff Current
|V
CE
= 850 Vdc. RBE = 80 0. T
C
= 100°CI
Emitter Cutoff Current
V
CEO(3U3)
Symbol
|
Min
[
TYP
|
Max
[
Unit
|
450
—
—
0.25
1,5
2.6
1.0
Vdc
ICEV
-
—
—
-
—
^*
mAdo
ICER
>EBO
mAdc
mAdc
(VEB
= 6 0
vdc,
ic - 01
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS |11
Collector-Emitter Saturation Voltage
He
-
5 0 Adc. IB
-
°
7 Ad£
)
(!(;= 10 Adc, lg= 1
3
Adc)
|I
C
= 10 Adc. IB - 1 3 Adc. T
c
= 100°C)
aasa-Einitter Saturation Voltage
ll
c
= 10 Adc. IB' ' 3 Adc)
HC « 10 Adc. IB = 1
3
Adc. TC - 100»C)
DC Current Gam
(l
c
= 15 Adc. VCE= 50 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
|V
CB
= lOVdc. I
E
=0. f,«,= 10kHz)
SWITCHING CHARACTERISTICS
Retittlve Load
Delay Time
Risa Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
<SV
v
CE(sat)
'S/b
See Figure 1
Saa Figure 2
RBSOA
Vdc
-
0.5
1.0
2.S
3.0
3.0
v
BE(sat)
Vdc
-
5.0
1.0
~
1.5
1.5
—
IFE
—
Cob
—
—
400
PF
HC= 10 Adc.
V
c
c =250 Vdc.
Id
dB2 " 2 6 Adc.
R
B
= 1 6 HI
Ir
>S
'f
Is
If
—
—
—
—
—
40
100
1400
140
600
100
IBI = 1 3 Adc.
PW = 30 KS.
Duty Cycle <S2 0%)
—
—
—
—
—
—
ns
(VBEIOffl'S-OVW
—
-
—
—
—
—
600
50
100
860
40
80
[l
c
= 10 Adc.
IBI = 1 3 Adc.
V
B
£loff)*50Vdc.
VcE(pk) =
4
00 Vdc)
(T
C
= 100-C)
Ifl
1800
200
250
—
—
-
ns
tc
Isv
(TC= i5o°c>
III
Ic
—
(II Pulse
Ten
PuliB Width = 300 us. Duly
Cycle < 2 0%
MJ16012, MJH16012
ELECTRICAL
CHARACTERISTICS
(T
c
= 7S»C unless otherwise hmadl
Characterise
Symbol
Mln
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Susteming Voltage
dc* 100mA. Ig -0)
Collector Cutoff Current
(V
CEV
= 850 Vdc. V
BE(Qf()
--
1 5 VdC)
(V
CEV
= 850 Vdc. V
B
E(off)
-
1 5 Vdc. T
c
= 100°C)
Collector Cutoff Current
v
CEO(sus)
450
—
-
0.25
Vdc
mAdc
ICEV
-
—
—
-
—
—
1.5
2.6
1.0
(V
C
E = 850 Vdc, RBE * so n. T
C
= ioo°ci
Emitter Cutoff Current
|V
EB
= 6 0
Vdc.
Ic
-
0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
dC = 5 0
Adc.
IB = 0 5
Adc)
dc- 10 Adc. IB = 1 OAdc)
dc = '0 Adc. IQ = 1 0 Adc. TC = 100°C)
Base-Emitter Saturation Voltage
(l
c
= 10 Adc, IB> 1 OAdc)
(1C = 10 Adc. IB = 1 OAdc. T
c
= 100"C)
DC Current Gam
(I
C
= 15 Adc. V
CE
= 50Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
'CER
mAdc
mAdc
IEBO
'S/b
See Figure 1
See Figure 2
RBSOA
v
CE(sat)
Vdc
-
-
2.S
3.0
3.0
v
8E(sal)
Vdc
-
-
—
1.S
1,6
"FE
7.0
—
—
(VCB = 10 vdc, IE = o. f,
es
, = i o ICHD
Cob
—
—
400
pf
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
(l
c
=
10
Adc.
V
CC
= 250
Vdc.
IB] - 1 OAdc.
PW - 30 us.
Duty Cycle =S2 0%)
dB2
=20
Adc.
R
B
= 1 60)
>d
t
r
Is
If
>s
-
—
—
—
40
100
1400
—
—
—
—
ns
140
600
100
•VflEloffl = 5 0 Vdc]
If
Isv
—
-
-
—
—
800
50
100
1500
ns
dC= lOAdc.
I
B1
= 1 0
Adc.
v
BE|
Q
ffl = 50Vdc,
VcE(pk) = "OOVdcl
|T
C
= 100°C)
'«
<c
'sv
—
—
—
860
40
80
ISO
200
-
—
—
(T
C
= 150°C)
Ifl
tc
ID PuluTgsl PulM Width = 300 us. Duty Cycle S 2 0»
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