INTEGRATED CIRCUITS
SA5212A
Transimpedance amplifier (140MHz)
Product specification
Replaces datasheet NE/SA/SE5212A of 1995 Apr 26
IC19 Data Handbook
1998 Oct 07
Philips
Semiconductors
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
DESCRIPTION
The SA5212A is a 14kΩ transimpedance, wideband, low noise
differential output amplifier, particularly suitable for signal recovery in
fiber optic receivers and in any other applications where very low
signal levels obtained from high-impedance sources need to be
amplified.
PIN CONFIGURATION
N, FE, D Packages
1
2
3
4
8
7
6
5
I
IN
V
CC
GND
2
OUT (–)
GND
2
OUT (+)
FEATURES
GND
1
GND
1
•
Extremely low noise: 2.5pA/√Hz
•
Single 5V supply
•
Large bandwidth: 140MHz
•
Differential outputs
•
Low input/output impedances
•
14kΩ differential transresistance
•
ESD hardened
APPLICATIONS
SD00336
Figure 1. Pin Configuration
•
Fiber-optic receivers, analog and digital
•
Current-to-voltage converters
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (SO) Package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Ceramic Dual In-Line Package (DIP)
•
Wideband gain block
•
Medical and scientific instrumentation
•
Sensor preamplifiers
•
Single-ended to differential conversion
•
Low noise RF amplifiers
•
RF signal processing
TEMPERATURE RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
ORDER CODE
SA5212AD
SA5212AN
SA5212AFE
DWG #
SOT96-1
SOT97-1
0580A
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
Power Supply
Power dissipation, T
A
=25°C (still
P
D MAX
8-Pin Plastic DIP
8-Pin Plastic SO
8-Pin Cerdip
I
IN MAX
T
A
T
J
T
STG
Maximum input current
2
Operating ambient temperature range
Operating junction
Storage temperature range
air)
1
1100
750
750
5
-40 to 85
-55 to 150
-65 to 150
mW
mW
mw
mA
°C
°C
°C
PARAMETER
SA5212A
6
UNIT
V
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance:
8-Pin Plastic DIP: 110°C/W
8-Pin Plastic SO: 160°C/W
8-Pin Cerdip: 165°C/W
2. The use of a pull-up resistor to V
CC
, for the PIN diode, is recommended
1998 Oct 07
2
853-1266 20142
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
A
T
J
Supply voltage range
Ambient temperature ranges
Junction temperature ranges
PARAMETER
RATING
4.5 to 5.5
-40 to +85
-40 to +105
UNIT
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V
CC
=5V, unless otherwise specified. Typical data applies at V
CC
=5V
and T
A
=25°C
1
.
SYMBOL
V
IN
V
O±
V
OS
I
CC
I
OMAX
I
IN
I
N MAX
PARAMETER
Input bias voltage
Output bias voltage
Output offset voltage
Supply current
Output sink/source current
Maximum input current (2% linearity)
Maximum input current overload threshold
Test Circuit 6, Procedure 2
Test Circuit 6, Procedure 4
20
3
±40
±60
26
4
±80
±120
TEST CONDITIONS
Min
0.55
2.5
Typ
0.8
3.3
Max
1.05
3.8
120
33
UNIT
V
V
mV
mA
mA
µA
µA
NOTES:
1. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
1998 Oct 07
3
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
AC ELECTRICAL CHARACTERISTICS
Minimum and Maximum limits apply over operating temperature range at V
CC
=5V, unless otherwise specified. Typical data applies at V
CC
=5V
and T
A
=25°C
5
.
SYMBOL
R
T
R
O
R
T
R
O
PARAMETER
Transresistance (differential output)
Output resistance (differential output)
Transresistance (single-ended output)
Output resistance (single-ended output)
TEST CONDITIONS
DC tested, R
L
=
∞
Test Circuit 6, Procedure 1
DC tested
DC tested, R
L
=
∞
DC tested
Test Circuit 1
D package,
f
3dB
Bandwidth (-3dB)
T
A
= 25°C
N, FE packages,
T
A
= 25°C
R
IN
C
IN
∆R/∆V
∆R/∆T
I
N
Input resistance
Input capacitance
Transresistance power supply sensitivity
Transresistance ambient
temperature sensitivity
RMS noise current spectral density
(referred to input)
Integrated RMS noise current over the band-
g
width (referred to input) C
S
= 0
1
I
T
C
S
= 1pF
V
CC
= 5
±0.5V
D package
∆T
A
= T
A MAX
-T
A MIN
Test Circuit 2
f = 10MHz T
A
= 25°C
T
A
= 25°C Test Circuit 2
∆f
= 50MHz
∆f
= 100MHz
∆f
= 200MHz
∆f
= 50MHz
∆f
= 100MHz
∆f
= 200MHz
Any package
DC tested
∆V
CC
= 0.1V
Equivalent AC
Test Circuit 3
Any package
f = 0.1MHz
1
Test Circuit 4
R
L
=
∞
Test Circuit 6, Procedure 3
Test Circuit 5
Test Circuit 5
1.7
100
70
120
110
10
9.6
0.05
2.5
20
27
40
22
32
52
nA
150
18
Ω
pF
%/V
%/°C
pA/√Hz
100
140
MHz
Min
9.0
14
4.5
7
Typ
14
30
7
15
Max
19
46
9.5
23
UNIT
kΩ
Ω
kΩ
Ω
PSRR
Power supply rejection ratio
2
20
33
dB
PSRR
Power supply rejection ratio
2
(ECL configuration)
Maximum differential output voltage swing
Maximum input amplitude for output duty
cycle of 50
±5%
3
Rise time for 50mV output signal
4
23
dB
V
O MAX
V
IN MAX
t
R
3.2
325
2.0
V
P-P
mV
P-P
ns
NOTES:
1. Package parasitic capacitance amounts to about 0.2pF.
2. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use RF filter in V
CC
line.
3. Guaranteed by linearity and over load tests.
4. t
R
defined as 20-80% rise time. It is guaranteed by -3dB bandwidth test.
5. As in all high frequency circuits, a supply bypass capacitor should be located as close to the part as possible.
1998 Oct 07
4
Philips Semiconductors
Product specification
Transimpedance amplifier (140MHz)
SA5212A
TEST CIRCUITS
SINGLE-ENDED
Rt
+
V OUT
V IN
2
@
S21
@
R
DIFFERENTIAL
Rt
+
V OUT
V IN
4
@
S21
@
R
1
)
S22
RO
+
ZO
*
33
1
*
S22
1
)
S22
R O
+
2Z O
*
66
1
*
S22
SPECTRUM ANALYZER
NETWORK ANALYZER
V
CC
A
V
= 60DB
1µF
OUT
S-PARAMETER TEST SET
PORT 1
PORT 2
NC
IN
DUT
33
33
OUT
1µF
V
CC
GND
1
0.1µF
OUT
R = 1k
IN
DUT
33
OUT
50
GND
1
GND
2
R
L
= 50Ω
1µF
33
1µF
GND
2
R
L
= 50
Z
O
= 50Ω
Test Circuit 1
Figure 2. Test Circuits 1 and 2
Test Circuit 2
SD00337
NETWORK ANALYZER
5V +
∆V
10µF
10µF
PORT 1
S-PARAMETER TEST SET
PORT 2
10µF
0.1µF
CURRENT PROBE
1mV/mA
16
CAL
V
CC
33
OUT
NC
IN DUT
33
OUT
1µF
GND
1
GND
2
100
BAL.
TRANSFORMER
NH0300HB
1µF
50
UNBAL.
TEST
Test Circuit 3
Figure 3. Test Circuit 3
SD00338
1998 Oct 07
5
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