®
LY65W256
Rev. 1.1
32K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Delete
E-grade
Issue Date
Aug.27.2010
Apr.06.2012
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY65W256
Rev. 1.1
32K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY65W256 is a 262,144-bit high speed CMOS
static random access memory organized as 32,768
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY65W256 is well designed for high speed
system application. Easy expansion is provided by
using an active LOW Chip Enable(CE#). The active
LOW Write Enable(WE#) controls both writing and
reading of the memory.
The LY65W256 operates from a single power
supply of 3~5V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 25ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 1μA (TYP.)
Single 3~5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 28-pin 300 mil SOJ
28-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY65W256(LL)
LY65W256(LLI)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
3.0 ~ 5.5V
3.0 ~ 5.5V
Speed
25ns
25ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
30mA
1μA
30mA
1μA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 - A14
DQ0 – DQ7
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Power Supply
Ground
A0-A14
DECODER
32Kx8
MEMORY ARRAY
CE#
WE#
OE#
V
CC
V
SS
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY65W256
Rev. 1.1
32K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY65W256
Rev. 1.1
32K X 8 BIT HIGH SPEED CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Average Operating
Power supply Current
Standby Power
Supply Current
SYMBOL
V
CC
V
IH
V
IL
*1
TEST CONDITION
V
CC
=3.0~3.6V
V
CC
=4.5~5.5V
V
CC
=3.0~3.6V
V
CC
=4.5~5.5V
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
,
Output Disabled
I
OH
= -4mA
I
OL
= 8mA
Cycle time = Min.
CE# = V
IL
, I
I/O
= 0mA
Others at V
IL
or V
IH
CE# = V
IH
Others at V
IL
or V
IH
CE#
≧
V
CC
-0.2V
Others at 0.2V or V
CC
-0.2V
*2
I
LI
I
LO
V
OH
V
OL
I
CC
I
SB
I
SB1
MIN.
3.0
2.0
2.4
- 0.5
- 0.5
-1
-1
2.2
-
-
-
-
TYP.
3.3
-
-
-
-
-
-
-
-
30
0.3
1
*4
MAX.
5.5
V
CC
+0.5
V
CC
+0.5
0.6
0.8
1
1
-
0.4
55
5
50
UNIT
V
V
V
V
V
µA
µA
V
V
mA
mA
µA
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY65W256
Rev. 1.1
32K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY65W256-25
MIN.
MAX.
25
-
-
25
-
25
-
9
4
-
0
-
-
9
-
9
3
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY65W256-25
MIN.
MAX.
25
-
20
-
20
-
0
-
12
-
0
-
10
-
0
-
6
-
-
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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