®
LY65W1024
Rev. 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Delete
E-grade
Issue Date
Aug.27.2010
Apr.06.2012
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
0
®
LY65W1024
Rev. 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY65W1024 is a 1,048,576-bit low power
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY65W1024 is well designed for very high
speed system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The LY65W1024 operates from a single power
supply of 3V~5V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 25ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 1μA (TYP.)
Single 3~5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 32-pin 300 mil SOJ
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
PRODUCT FAMILY
Product
Family
LY65W1024(LL)
LY65W1024(LLI)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
3.0 ~ 5.5V
3.0 ~ 5.5V
Speed
25ns
25ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
1µA
30mA
1µA
30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A16
DQ0 – DQ7
DECODER
128Kx8
MEMORY ARRAY
A0-A16
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
1
®
LY65W1024
Rev. 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOJ
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
CE2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
LY65W1024
LY65W1024
TSOP-I/STSOP
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
I
CC
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2
®
LY65W1024
Rev. 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL TEST CONDITION
V
CC
V
CC
=3.0~3.6V
*1
V
IH
V
CC
=4.5~5.5V
V
CC
=3.0~3.6V
Input Low Voltage
*2
V
IL
V
CC
=4.5~5.5V
Input Leakage Current
V
CC
≧
V
IN
≧
V
SS
I
LI
Output Leakage
V
CC
≧
V
OUT
≧
V
SS,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
Output Low Voltage
V
OL
I
OL
= 8mA
Cycle time = Min.
Average Operating
CE# = V
IL
and CE2 = V
IH
,
I
CC
Power supply Current
I
I/O
= 0mA,
Others at V
IL
or V
IH
CE# = V
IH
or CE2 = V
IL
I
SB
Others at V
IL
or V
IH
Standby Power
Supply Current
CE#
≧
V
CC
-0.2V or CE2
≦
0.2V
I
SB1
Others at 0.2V or V
CC
-0.2V
PARAMETER
Supply Voltage
Input High Voltage
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
MIN.
3.0
2.0
2.4
- 0.5
- 0.5
-1
-1
2.2
-
-
TYP.
3.3
-
-
-
-
-
-
-
-
30
*4
MAX.
5.5
V
CC
+0.5
V
CC
+0.5
0.6
0.8
1
1
-
0.4
55
UNIT
V
V
V
V
V
µA
µA
V
V
mA
-
-
0.3
1
5
50
mA
µA
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -4mA/8mA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
3
®
LY65W1024
Rev. 1.1
128K X 8 BIT HIGH SPEED CMOS SRAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
SYM.
t
RC
t
AA
t
ACE
t
OE
t
CLZ
*
t
OLZ
*
t
CHZ
*
t
OHZ
*
t
OH
LY65W1024-25
MIN.
MAX.
25
-
-
25
-
25
-
9
4
-
0
-
-
9
-
9
3
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
LY65W1024-25
MIN.
MAX.
25
-
20
-
20
-
0
-
12
-
0
-
10
-
0
-
6
-
-
10
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
4
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