®
LY62W20488
Rev. 1.0
2048K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev.1.0
Description
Initial Issue
Revised Notes item 1 and 2 in page 4
1. V
IH
(max) = V
CC
+ 2.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 2.0V for pulse width less than 6ns.
Issue Date
Oct.5.2010
Aug.29.2013
Revised
ORDERING INFORMATION
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62W20488
Rev. 1.0
2048K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62W20488 is a 16,777,216-bit low power
CMOS static random access memory organized as
2,097,152 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62W20488 is well designed for very low
power system applications, and particularly well
suited for battery back-up nonvolatile memory
application.
The LY62W20488 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 10μA (TYP.) LL-version
Single 2.7V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY62W20488
LY62W20488(E)
LY62W20488(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
2.7 ~ 5.5V
2.7 ~ 5.5V
Speed
55/70ns
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
10µA(LL)
45/30mA
10µA(LL)
45/30mA
10µA(LL)
45/30mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 – A20
DQ0 – DQ7
DECODER
2048Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A20
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62W20488
Rev. 1.0
2048K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62W20488
Rev. 1.0
2048K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62W20488
Rev. 1.0
2048K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
V
IH
*1
TEST CONDITION
V
CC
= 4.5~5.5V
V
CC
= 2.7~4.5V
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
Output Disabled
I
OH
= -1mA, V
CC
= 4.5~5.5V
I
OH
= -1mA, V
CC
= 2.7~4.5V
I
OL
= 2mA
Cycle time = Min.
- 55
CE# = V
IL
and CE2 = V
IH
I
I/O
= 0mA
- 70
Other pins at V
IL
or V
IH
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
I/O
= 0mA
Other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
Other pins at V
IL
or V
IH
-LL
CE#
≧
V
CC
-0.2V
-LLE
or CE2
≦
0.2V
Other pins at 0.2V or V
CC
-0.2V -LLI
V
IL
I
LI
*2
MIN.
2.7
2.4
2.2
- 0.2
-1
-1
2.4
2.2
-
-
-
TYP.
MAX.
3.0~5.0
5.5
-
V
CC
+0.3
-
V
CC
+0.3
-
0.6
-
1
-
-
-
-
45
30
1
-
-
0.4
60
50
*4
UNIT
V
V
V
V
µA
µA
V
V
V
mA
mA
I
LO
V
OH
V
OL
I
CC
Average Operating
Power supply Current
I
CC1
-
8
16
mA
I
SB
Standby Power
Supply Current
I
SB1
-
-
-
-
0.3
10
10
10
2
60
80
100
mA
µA
µA
µA
Notes:
1. V
IH
(max) = V
CC
+ 2.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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