74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Description
The 74LVCE1G00 is a single 2-input positive NAND gate
with a standard totem pole output. The device is designed
for operation with a power supply range of 1.4V to 5.5V.
The inputs are tolerant to 5.5V allowing this device to be
used in a mixed voltage environment. The device is fully
specified for partial power down applications using I
OFF
. The
I
OFF
circuitry disables the output preventing damaging
current backflow when the device is powered down.
The gate performs the positive Boolean function:
Pin Assignments
(Top View)
A
B
1
2
4
5
Vcc
GND
3
Y
NEW PRODUCT
SOT25 / SOT353
(Top View)
A
B
1
2
3
6
5
4
Y
=
A
•
B
Features
•
•
•
•
•
•
•
•
or
Y
=
A
+
B
Vcc
NC
Y
Extended Supply Voltage Range from 1.4 to 5.5V
Switching speed characterized for operation at 1.5V
Offers 30% speed improvement over LVC at 1.8V.
± 24mA Output Drive at 3.3V
CMOS low power consumption
IOFF Supports Partial-Power-Down Mode Operation
Inputs accept up to 5.5V
ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
•
•
•
Voltage Level Shifting
General Purpose Logic
Wide array of products such as.
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Cell Phones, Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
DFN1410 (Note 2)
GND
Applications
•
•
•
•
•
Latch-Up Exceeds 100mA per JESD 78, Class II
Range of Package Options
Direct Interface with TTL Levels
SOT25, SOT353, and DFN1410: Assembled with “Green”
Molding Compound (no Br, Sb)
Lead Free Finish/ RoHS Compliant (Note 1)
Notes:
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
1 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Absolute Maximum Ratings
(Note 3)
Symbol
ESD HBM
ESD MM
V
CC
V
I
V
o
Description
Human Body Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current
Continuous output current
Continuous current through Vdd or GND
T
J
T
STG
Note:
Rating
2
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.3 to V
CC
+0.5
-50
-50
±50
±100
-40 to 150
-65 to 150
Unit
KV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
NEW PRODUCT
V
o
I
IK
I
OK
I
O
Operating Junction Temperature
Storage Temperature
3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
3 of 14
www.diodes.com
December 2010
© Diodes Incorporated
74LVCE1G00
SINGLE 2 INPUT POSITIVE NAND GATE
Electrical Characteristics
(All typical values are at Vcc = 3.3V, T
A
= 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Vcc
1.4 V to 5.5V
1.4 V
1.65 V
2.3V
3V
4.5 V
1.4 V to 5.5V
1.4 V
1.65 V
2.3V
3V
4.5
0 to 5.5 V
0
1.4 V to 5.5V
3 V to 5.5V
3.3
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
3.5
204
371
430
52
143
190
Min
V
CC
– 0.1
1.05
1.2
1.9
2.4
2.3
3.8
0.1
.4
0.45
0.3
0.4
0.55
0.55
±5
± 10
10
500
Typ.
Max
Unit
NEW PRODUCT
V
OH
V
OL
I
I
I
OFF
I
CC
ΔI
CC
C
i
θ
JA
θ
JC
Note:
I
OH
= -100μA
I
OH
= -3mA
I
OH
= -4mA
High Level Output
I
OH
= -8mA
Voltage
I
OH
= -16mA
I
OH
= -24mA
I
OH
= -32mA
I
OL
= 100μA
I
OL
= 3mA
I
OL
= 4mA
High-level Input Voltage I
OL
= 8mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 32mA
Input Current
V
I
= 5.5 V or GND
Power Down Leakage
V
I
or V
O
= 5.5V
Current
V
I
= 5.5V of GND
Supply Current
I
O
=0
One input at V
CC
–
Additional Supply
0.6 V Other inputs
Current
at V
CC
or GND
Input Capacitance
V
i
= V
CC
– or GND
SOT25
Thermal Resistance
SOT353
Junction-to-Ambient
DFN1410
SOT25
Thermal Resistance
SOT353
Junction-to-Case
DFN1410
V
V
μA
μA
μA
μA
pF
o
C/W
o
C/W
5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVCE1G00
Document number: DS32210 Rev. 2 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
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