®
LY61L51216A
Rev. 1.3
512K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issued
“CE#
≧
V
CC
- 0.2V” revised as ”CE#
≦
0.2” for TEST
CONDITION of Average Operating Power supply Current
Icc1 on page3
2.Revised
ORDERING INFORMATION
Page13
1. Revise “TEST CONDITION” for VOH, VOL on page 4
I
OH
= -8mA revised as -4mA
I
OL
=4mA revised as 8mA
2. Revise VIH(max) & VIL(min) note on page 4
VIH(max) = VCC + 2.0V for pulse width less than 6ns.
VIL(min) = VSS - 2.0V for pulse width less than 6ns.
Revised the address pin sequence of TSOP-II pin configuration on
page 2 in order to be compatible with industry convention. (No
function specifications and applications have been changed and all
the characteristics are kept all the same as Rev 1.2 )
Issue Date
2012/2/22
July.19. 2012
Rev. 1.2
June. 04. 2013
Rev. 1.3
Oct. 30. 2013
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY61L51216A
Rev. 1.3
512K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
FEATURES
Fast access time : 8/10/12ns
low power consumption:
Operating current:
90/80/70mA (TYP. 8/10/12ns)
Standby current:
3mA(TYP)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mmx8mm TFBGA
The LY61L51216A is a 8M-bit high speed CMOS
static random access memory organized as 512K
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L51216A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
LY61L51216A
LY61L51216A(I)
LY61L51216A
LY61L51216A(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
0 ~ 70℃
-40 ~ 85℃
Vcc Range
3.0 ~ 3.6V
3.0 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
8/10/12ns
8/10/12ns
10/12ns
10/12ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc
1
,TYP.)
3mA
90/80/70mA
3mA
90/80/70mA
3mA
80/70mA
3mA
80/70mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A18
CE#
WE#
OE#
LB#
UB#
V
CC
V
SS
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
DQ0 – DQ15 Data Inputs/Outputs
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY61L51216A
Rev. 1.3
512K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 A17
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
A18
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Terminal Voltage with Respect to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
TERM
T
A
T
STG
P
D
I
OUT
T
SOLDER
RATING
-0.5 to 4.6
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
260
UNIT
V
℃
℃
W
mA
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY61L51216A
Rev. 1.3
512K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
D
IN
High – Z
D
IN
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
D
OUT
D
OUT
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
SYMBOL
V
CC
V
IH
*2
V
IL
I
LI
I
LO
V
OH
V
OL
Icc
Average Operating
Power supply Current
Icc
1
Standby Power
Supply Current
Standby Power
Supply Current
Isb
I
SB1
*1
TEST CONDITION
-8
-10/12
MIN.
3.0
2.7
2.2
- 0.3
-1
-1
2.4
-
TYP.
3.3
3.3
-
-
-
-
*4
MAX.
3.6
3.6
V
CC
+0.3
0.8
1
1
-
0.4
140
130
120
120
110
100
40
25
UNIT
V
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
V
CC
≧
V
IN
≧
V
SS
V
CC
≧
V
OUT
≧
V
SS
, Output Disabled
I
OH
= -4mA
I
OL
=8mA
CE# = V
IL
, I
I/O
= 0mA
;f=max
CE#
≦
0.2, Other pin is at
0.2V or Vcc-0.2V
I
I/O
= 0mA;f=max
-8
-10
-12
-8
-10
-12
-
-
-
-
-
-
-
-
-
-
110
100
90
90
80
70
-
3
CE#
≧Vih
,Other pin is at Vil or Vih
CE#
≧
V
CC
- 0.2V;
Other pin is at 0.2V or Vcc-0.2V
Notes:
1. V
IH
(max) = V
CC
+ 2.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY61L51216A
Rev. 1.3
512K X 16 BIT HIGH SPEED CMOS SRAM
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
speed
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
8ns/10/12ns
0.2V to Vcc-0.2V
3ns
1.5V
C
L
= 30pF + 1TTL,
I
OH
/I
OL
= -4mA/8mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
LY61L51216A-8
LY61L51216A-10 LY61L51216A-12
SYM. MIN.
t
RC
8
t
AA
-
t
ACE
-
t
OE
-
t
CLZ
*
2
t
OLZ
*
0
t
CHZ
*
-
t
OHZ
*
-
t
OH
2
t
BA
-
t
BHZ
*
-
t
BLZ
*
0
MAX.
-
8
8
4.5
-
-
3
3
-
4.5
3
-
MIN.
10
-
-
-
2
0
-
-
2
-
-
0
MAX.
-
10
10
4.5
-
-
4
4
-
4.5
4
-
MIN.
12
-
-
-
3
0
-
-
2
-
-
0
MAX.
-
12
12
5
-
-
5
5
-
5
5
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW
*
t
WHZ
*
t
BW
LY61L51216A-8
LY61L51216A-10 LY61L51216A-12
MIN.
8
6.5
6.5
0
6.5
0
5
0
2
-
6.5
MAX.
-
-
-
-
-
-
-
-
-
3
-
MIN.
10
8
8
0
8
0
6
0
2
-
8
MAX.
-
-
-
-
-
-
-
-
-
4
-
MIN.
12
10
10
0
10
0
7
0
2
-
10
MAX.
-
-
-
-
-
-
-
-
-
5
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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