HCS60R180E Super Junction MOSFET
Mar 2016
HCS60R180E
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (R
DS(on)
X Q
g
)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BV
DSS
@T
j,max
I
D
R
DS(on), max
Qg
, Typ
Value
650
20
0.18
22
nC
Unit
V
A
Application
Telecom Power equipment / Server station
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
dv/dt
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
T
C
=25
unless otherwise specified
Parameter
Value
600
30
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
20.0 *
12.6 *
60.0 *
310
50
15
34
-55 to +150
300
(Note 1)
(Note 2)
Single Pulsed Avalanche Energy
MOSFET dv/dt ruggedness,
V
DS
=0…480V
Reverse diode dv/dt,
V
DS
=0…480V, I
DS
I
D
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.67
62.5
Units
/W
HCS60R180E Super Junction MOSFET
Electrical Characteristics
T
J
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 10 A
2.5
--
--
0.15
4.5
0.18
V
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
J
= 125
V
GS
=
30 V, V
DS
= 0 V
600
--
--
--
--
--
--
--
--
1
100
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1440
105
3.9
--
--
--
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 10 A
V
GS
= 10 V
V
DS
= 300 V, I
D
= 10 A,
R
G
= 25
--
--
--
--
--
--
--
44
20
85
17
22
8
4
--
--
--
--
29
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 20 A, V
GS
= 0 V
I
S
= 20 A, V
GS
= 0 V
di
F
/dt = 100 A/
--
--
--
--
--
--
--
--
367
4.2
20
A
60
1.4
--
--
V
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
=2.7A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
3. Pulse Test : Pulse Width
HCS60R180E Super Junction MOSFET
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
8
6
4
2
Note : I
D
= 10A
0
0
5
10
15
20
25
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HCS60R180E Super Junction MOSFET
Typical Characteristics
(continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
* Note :
1. V
GS
= 10 V
2. I
D
= 10 A
0.9
Note :
1. V
GS
= 0 V
2. I
D
= 250uA
0.5
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
20
Figure 8. On-Resistance Variation
vs Temperature
10
2
Operation in This Area
is Limited by R
DS(on)
16
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
10 s
100 s
12
10
0
1 ms
10 ms
100 ms
8
10
-1
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
4
DC
0
25
10
-2 -1
10
10
0
10
1
10
2
10
3
50
75
100
o
125
150
V
DS
, Drain-Source Voltage [V]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
Z
JC
(t), Thermal Response
10
0
0.2
0.1
0.05
10
-1
* Notes :
1. Z
JC
(t) = 3.67
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
0.02
0.01
single pulse
P
DM
t
1
-3
10
-2
10
-5
t
2
10
1
10
-4
10
10
-2
10
-1
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
HCS60R180E Super Junction MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
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