INTEGRATED CIRCUITS
SA611
1GHz low voltage LNA and mixer
Product specification
Supersedes data of 1997 Nov 07
IC17 Data Handbook
1999 Mar 26
Philips
Semiconductors
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
DESCRIPTION
The SA611 is a combined low-noise amplifier, and mixer designed
for high-performance low-power communication systems from
800-1000MHz. The low-noise preamplifier has a 1.7dB noise figure
at 881MHz with 15dB gain and an IP3 intercept of -7dBm at the
input. The gain is stabilized by on-chip compensation to vary less
than
±0.2dB
over -40 to +85°C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+7.0dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
PIN CONFIGURATION
PD1
PD2
GND
LO OUT
GND
GND
GND
GND
GND
1
2
3
4
5
6
7
8
9
20 MIXER OUT
19 MIXER OUT
18 GND
17 MIXER IN
16 GND
15 LNA IN
14 GND
13 LNA OUT
12 V
CC
11 GND
FEATURES
•
Low current consumption
•
Outstanding gain and noise figure
•
Excellent gain stability versus temperature and supply voltage
•
LNA and mixer power down capability
GND 10
SR00124
Figure 1. Pin Configuration
APPLICATIONS
•
900MHz cellular and cordless front-end
•
Spread spectrum receivers
•
RF data links
•
UHF frequency conversion
•
Portable radio
ORDERING INFORMATION
DESCRIPTION
20-Pin Shrink Small Outline Package (Surface-mount, SSOP)
TEMPERATURE RANGE
-40 to +85
°
C
ORDER CODE
SA611DK
DWG #
SOT266–1
BLOCK DIAGRAM
MIXER
OUT
MIXER
OUT
GND
MIXER
IN
GND
LNA
IN
GND
LNA
OUT
V
CC
GND
20
10pF
19
10pF
18
17
16
15
14
13
12
11
LNA
1
PD1
2
PD2
3
GND
4
LO
OUT
5
GND
6
GND
7
GND
8
GND
9
GND
10
GND
SR00125
Figure 2. SA611 Block Diagram
1999 Mar 26
2
853-1886 21103
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
V
IN
P
D
T
JMAX
P
MAX
T
STG
Supply voltage
NO TAG
Voltage applied to any other pin
Power dissipation, T
A
= 25°C (still air)NO TAG
20-Pin Plastic SSOP
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
PARAMETER
RATING
-0.3 to +6
-0.3 to (V
CC
+ 0.3)
980
150
+20
–65 to +150
UNITS
V
V
mW
°C
dBm
°C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θ
JA
: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
T
A
T
J
Supply voltage
Operating ambient temperature range
Operating junction temperature
PARAMETER
RATING
2.7 to 5.5
-40 to +85
-40 to +105
UNITS
V
°C
°C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
°
C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Full power-on
I
CC
Su ly
Supply current
LNA powered-down
owered-down
Full power-down
V
T
V
IH
V
IL
I
IL
I
IH
PD logic threshold voltage
Logic 1 level
Logic 0 level
PD1 input current
PD2 input current
Enable = 0.4V
Enable = 2.4V
1.2
2.0
–0.3
10
10
MIN
TYP
8.3
5.2
52
20
1.6
1.8
V
CC
0.8
MAX
UNITS
mA
mA
µA
V
V
V
µA
µA
1999 Mar 26
3
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
°
C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
LIMITS
SYMBOL
Low Noise Amplifier
f
RF
S
21
S
21
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP3
NF
t
ON
t
OFF
Mixer
PG
C
S
11M
NF
M
P
-1dB
IP3
M
IP
2INT
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
Mixer power conversion gain: R
P
= R
L
= 1.2kΩ,
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
RF
IN
= -28dBm
LO = -0dBm
f
RF
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
Ext. impedance matching req.
8.7
-10
12
-14.5
7.0
15
-45
-23
-36
-38
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RF input frequency range
Amplifier gain
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
Amplifier output match
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
Amplifier turn-on time (Enable Lo
→
Hi)
Amplifier turn-off time (Enable Hi
→
Lo)
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
800
15
-28
0.006
±0.013
-28
-10
-10
-20
-7
1.7
120
0.3
1000
MHz
dB
dB
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dB
µs
µs
PARAMETER
TEST CONDITIONS
–3s
TYP
+3s
UNITS
Overall System
G
SYS
System gain
LNA + Mixer
23.0
23.7
24.4
dB
1999 Mar 26
4
Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
Table 1. Power ON/OFF Control Logic
PD1
0
0
1 or open
1 or open
PD2
0
1 or open
0
1 or open
Full chip power-down
Mixer on, LNA power-down
Standby (bias on)
Full chip power-on (default)
C1
100pF
L6
12nH
C3
6.8pF
IFOUT
L1
560nH
C2
10nF
C10
2.2pF
L3
6.8nH
C11 10nF
C14
6.8pF
17
MIXER
IN
16
GND
15
LNA
IN
C8
10nF
C13
33pF
+
–
VCC
3V
C9
0.1µF
L4
560nH
20
MIXER
OUT
19
MIXER
OUT
18
GND
14
GND
13
LNA
OUT
12
VCC
11
GND
SA611
PD1
1
PD2
2
GND
3
LOOUT
4
GND
5
GND
6
GND
7
GND
8
GND
9
GND
10
C12
100pF
VCOOUT
SR00126
Figure 3. SA611 Applications Circuit
1999 Mar 26
5
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