CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C099I3
Issued Date : 2015.10.28
Revised Date :
Page No. : 1/10
MTN6N65BI3S
Features
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
R
DS(ON)
@V
GS
=10V, I
D
=3A
650V
6A
1.2Ω(typ)
Symbol
MTN6N65BI3S
Outline
TO-251S
G
G：Gate D：Drain S：Source
D
S
Ordering Information
Device
MTN6N65BI3S-0-UA-G
Package
TO-251S
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN6N65BI3S
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C099I3
Issued Date : 2015.10.28
Revised Date :
Page No. : 2/10
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (T
A
=25℃)
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
E
AR
T
L
P
D
Tj, Tstg
650
±30
6
3.8
24
106
5.5
9
300
1.25
89
0.71
-55~+150
V
A
mJ
A
mJ
°C
W
W
W/°C
°C
Note : 1
.
Repetitive rating; pulse width limited by maximum junction temperature.
2
.
I
AS
=5.5A, V
DD
=50V, L=7mH, V
GS
=10V, starting T
J
=+25
℃
. 100% tested by conditions of L=7mH, I
AS
=3A,
V
GS
=10V, V
DD
=50V.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
1.4
100
Unit
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*t
d(ON)
*tr
*t
d(OFF)
*t
f
MTN6N65BI3S
Min.
650
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
8.2
-
-
-
1.2
28.6
5.4
12.2
21.6
63.6
54
27.6
Max.
-
-
4
-
±
100
1
10
1.5
-
-
-
-
-
-
-
Unit
V
V/°C
V
S
nA
μA
Ω
Test Conditions
V
GS
=0V, I
D
=250μA, Tj=25
℃
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=3A
V
GS
=
±
30V
V
DS
=650V, V
GS
=0V
V
DS
=520V, V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=3A
nC
I
D
=6A, V
DD
=520V, V
GS
=10V
V
DS
=325V, I
D
=6A, V
GS
=10V,
R
G
=25
Ω
CYStek Product Specification
ns
CYStech Electronics Corp.
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
891
80
9
3
-
-
0.82
370
2.15
-
-
-
-
6
24
1.5
-
-
pF
Ω
A
V
ns
μC
I
S
=6A, V
GS
=0V
Spec. No. : C099I3
Issued Date : 2015.10.28
Revised Date :
Page No. : 3/10
V
GS
=0V, V
DS
=30V, f=1MHz
f=1MHz
V
GS
=0V, I
F
=6A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN6N65BI3S
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
3.0
10V
9V
8V
7V
R
DS(ON)
, Normalized Static Drain-Source
On-state Resistance
2.5
2.0
1.5
1.0
0.5
0.0
10
20
30
V
DS
, Drain-Source Voltage(V)
40
50
-75
-50
-25
I
D
=3A,
V
GS
=10V
Spec. No. : C099I3
Issued Date : 2015.10.28
Revised Date :
Page No. : 4/10
Static Drain-Source On-resistance vs Ambient Temperature
I
D
, Drain Current(A)
6
V
5.5V
V
GS
=4.5V
5V
R
DSON
@Tj=25°C : 1.2Ωtyp.
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Drain Current vs Gate-Source Voltage
2.0
R
DS(ON)
, Static Drain-Source On-
State Resistance(Ω)
1.6
1.2
0.8
0.4
0.0
0.01
0.1
1
I
D
, Drain Current(A)
10
V
GS
=10V
16
14
I
D
, Drain Current(A)
12
10
8
6
4
2
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
V
DS
=10V
Ta=25°C
V
DS
=30V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
6
R
DS(ON)
, Static Drain-Source On-State
Resistance(Ω)
5
4
3
2
1
0
0
2
4
6
8
10
I
D
=3A
Ta=25°C
0.001
0
100
Forward Drain Current vs Source-Drain Voltage
I
F
, Forward Current(A)
10
V
GS
=0V
1
Ta=150°C
0.1
Ta=25°C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, Gate-Source Voltage(V)
V
SD
, Source Drain Voltage(V)
MTN6N65BI3S
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
10000
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
1.4
Spec. No. : C099I3
Issued Date : 2015.10.28
Revised Date :
Page No. : 5/10
Brekdown Voltage vs Ambient Temperature
Ciss
1.2
Capacitance(pF)
1000
1.0
Coss
100
0.8
I
D
=250μA,
V
GS
=0V
0.6
-75
-50
-25
0
25 50 75 100 125 150 175
T
A
,
Ambient Temperature(°C)
f=1MHz
10
Crss
0
5
10
15
20
25
V
DS
, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
100
μs
10
μs
Gate Charge Characteristics
10
V
DS
=130V
I
D
, Drain Current(A)
10
1ms
10ms
V
GS
, Gate-Source Voltage(V)
R
DS(ON)
Limited
8
V
DS
=325V
6
V
DS
=520V
4
1
100ms
DC
0.1
T
C
=25°C, Tj(max)=150°C
V
GS
=10V, R
θJC
=1.4°C/W
Single pulse
1
10
100
1000
2
I
D
=6A
0
0
6
12
18
24
30
36
0.01
V
DS
, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
7
6
I
D
, Maximum Drain Current(A)
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
V
GS(th)
, Normalized Threshold Voltage
1.4
1.2
I
D
=1mA
5
4
3
2
1
0
25
50
75
100
125
150
175
T
C
, Case Temperature(°C)
V
GS
=10V, R
θJC
=1.4°C/W
1
0.8
0.6
0.4
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=250μA
MTN6N65BI3S
CYStek Product Specification
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