Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
T
C
= 25_C
Maximum Power Dissipation (Schottky)
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25_C
T
A
= 25_C
I
DM
I
S
I
F
I
FM
I
D
Symbol
V
DS
V
KA
V
GS
Limit
–20
–20
"12
– 2.7
–2.1
–2.1
b, c
–1.7
b, c
–7
–2.4
–1.9
b, c
– 1
b
–7
2.75
1.75
1.75
b, c
1.1
b, c
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET and Schottky)
Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)
Notes
a. Based on T
C
= 25_C.
b. Surface Mounted on FR4 Board.
c. t
v
10 sec.
d. Maximum under Steady State conditions is 120
_C/W.
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
www.vishay.com
Symbol
R
thJA
R
thJF
Typical
60
35
Maximum
71.5
45
Unit
_C/W
1
Si4845DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
V
DS
DV
DS/TJ
DV
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= –250
mA
I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –20 V, V
GS
= 0 V, T
J
= 75_C
V
DS
w
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –2 A
V
GS
= –2.5 V, I
D
= –1 A
V
DS
= –15 V, I
D
= –2 A
–5
0.175
0.285
3.5
0.210
0.345
W
S
–0.5
–20
–25
2.6
–1.5
"100
–1
–10
mV/_C
V
nA
mA
A
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –10 V, R
L
= 2.5
W
10
I
D
^
–4 A, V
GEN
= –10 V, R
g
= 1
W
V
DD
= –10 V, R
L
= 2.5
W
10
I
D
^
–4 A, V
GEN
= –4.5 V, R
g
= 1
W
f = 1 MHz
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –4 A
V
DS
= –10 V, V
GS
= 0 V, f = 1 MHz
312
63
33
2.9
0.72
0.65
5.5
8
40
17
11
3
10
12
8
13
60
26
18
6
16
20
15
ns
W
4.5
nC
p
pF
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= –2 A, di/dt = 100 A/ms, T
J
= 25
_C
A
A/ms
I
S
= –1.9 A, V
GS
= 0 V
–0.85
24
14
14
10
ns
T
C
= 25
_C
–2.7
–7
–1.2
40
20
A
V
ns
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73415
S-51110—Rev. B, 13-Jun-05
Si4845DY
New Product
SCHOTTKY SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Forward Voltage Drop
Vishay Siliconix
Symbol
V
F
Test Condition
I
F
= 1 A
I
F
= 1 A, T
J
= 125_C
V
r
= 30 V
V
r
= 30 V, T
J
= 75_C
V
r
= 30 V, T
J
= 125_C
V
r
= 10 V
Min
Typ
0.45
0.36
0.04
0.1
2
62
Max
0.50
0.42
0.1
2
10
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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