b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
2
Si4884BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 4 V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
40
1.2
Vishay Siliconix
Transfer Characteristics
1.0
0.8
30
0.6
T
C
= 125_C
0.4
25_C
20
10
3V
0
0.0
0.2
–55_C
0.3
0.6
0.9
1.2
1.5
0.0
1.0
1.4
1.8
2.2
2.6
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
0.014
2000
Capacitance
C
iss
r
DS(on)
– On-Resistance (W)
0.012
C – Capacitance (pF)
1600
0.010
V
GS
= 4.5 V
1200
0.008
V
GS
= 10 V
800
0.006
400
C
rss
C
oss
0.004
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
I
D
= 12 A
8
r
DS(on)
– On-Resistance
(Normalized)
V
DS
= 10 V
6
V
DS
= 15 V
V
DS
= 20 V
1.4
1.6
On-Resistance vs. Junction Temperature
I
D
= 10 A
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
T
J
– Junction Temperature (_C)
www.vishay.com
3
Si4884BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
r
DS(on)
– Drain-to-Source On-Resistance (W)
10
T
J
= 150_C
I
S
– Source Current (A)
1
0.05
I
D
= 10 A
0.04
On-Resistance vs. Gate-to-Source Voltage
0.03
0.1
T
J
= 25_C
0.01
0.02
T
J
= 125_C
0.01
T
J
= 25_C
0.00
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
2
3
4
5
6
7
8
9
10
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.6
100
Single Pulse Power, Junction-to-Ambient
0.3
80
I
D
= 250
mA
Power (W)
60
V
GS(th)
(V)
0.0
–0.3
40
–0.6
20
–0.9
–50
–25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Safe Operating Area, Junction-to-Ambient
100
*Limited by r
DS(on)
10
I
D
– Drain Current (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25_C
Single Pulse
0.01
0.1
1
10
100
10 s
dc
V
DS
– Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
www.vishay.com
4
Document Number: 73454
S–51450—Rev. A, 01-Aug-05
Si4884BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating*
20
Vishay Siliconix
16
I
D
– Drain Current (A)
12
8
4
0
0
25
50
75
100
125
150
T
C
– Case Temperature (_C)
Power, Junction-to-Foot
5.5
2.0
Power, Junction-to-Ambient
4.4
1.6
3.3
Power
Power
2.2
1.2
0.8
1.1
0.4
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (_C)
T
C
– Case Temperature (_C)
*The power dissipation P
D
is based on T
J(max)
= 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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