Si6447DQ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
–20
r
DS(on)
(W)
0.09 @ V
GS
= –10 V
0.16 @ V
GS
= –4.5 V
I
D
(A)
"3.2
"2.4
S*
TSSOP-8
D
S
S
G
1
2
3
4
Top View
D
P-Channel MOSFET
D
Si6447DQ
8
7
6
5
D
S
S
D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
Symbol
V
DS
V
GS
Limit
–20
"20
"3.2
"2.5
"20
–1.7
1.5
Unit
V
A
W
1.0
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70170
S-00872—Rev. G, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Limit
83
Unit
_C/W
2-1
Si6447DQ
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –20 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –10 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= 3.2 A
r
DS( )
DS(on)
g
fs
V
SD
V
GS
= –4.5 V, I
D
= 2.0 A
V
DS
= –15 V, I
D
= –3.2 A
I
S
= –1.7 A, V
GS
= 0 V
–14
A
–2.5
0.060
0.100
4.0
–0.9
–1.2
0.09
0.16
W
S
V
–1.0
"100
–1
–5
V
nA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
On-State Drain Current
a
I
D(on)
Drain Source On State Resistance
a
Drain-Source On-State
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.7 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –10 V R
G
= 6
W
1A
10 V,
V
DS
= –10 V V
GS
= –10 V I
D
= –3.2 A
10 V,
10 V,
32
15
3
3.5
13
13
30
13
50
40
25
50
20
100
ns
25
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
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S
FaxBack 408-970-5600
2-2
Document Number: 70170
S-00872—Rev. G, 01-May-00
Si6447DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 5 thru 10 V
8
I
D
– Drain Current (A)
I
D
– Drain Current (A)
8
10
Transfer Characteristics
6
4V
6
4
4
T
C
= 125_C
2
25_C
–55_C
0
2
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1500
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.24
C – Capacitance (pF)
1200
0.18
V
GS
= 4.5 V
0.12
V
GS
= 10 V
0.06
900
C
iss
600
C
oss
300
C
rss
0
0
4
8
12
16
20
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 3.2 A
Gate Charge
1.60
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.2 A
8
r
DS(on)
– On-Resistance (
W)
(Normalized)
6
9
12
15
1.40
6
1.20
4
1.00
2
0.80
0
0
3
0.60
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70170
S-00872—Rev. G, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6447DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
20
1.0
On-Resistance vs. Gate-to-Source Voltage
10
I
S
– Source Current (A)
r
DS(on)
– On-Resistance (
W
)
0.8
T
J
= 150_C
0.6
T
J
= 25_C
0.4
I
D
= 3.2 A
0.2
1
0.00
0.3
0.6
0.9
1.2
1.5
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.60
50
Single Pulse Power
0.45
V
GS(th)
Variance (V)
I
D
= 250
mA
0.30
Power (W)
40
30
0.15
20
0.00
10
–0.15
–0.3
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
=
83
_C/W
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
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S
FaxBack 408-970-5600
2-4
Document Number: 70170
S-00872—Rev. G, 01-May-00
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