Si6875DQ
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET, Common Drain
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.027 @ V
GS
= –4.5 V
–20
20
0.036 @ V
GS
= –2.5 V
0.052 @ V
GS
= –1.8 V
I
D
(A)
–6.4
–5.5
–4.6
S
1
S
2
TSSOP-8
D
1
S
1
S
1
G
1
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
D
8
D
2
S
2
S
2
G
2
G
1
G
2
Si6875DQ
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
–20
"8
–6.4
–5.1
–30
–1.6
1.78
1.14
Steady State
Unit
V
–5.2
–4.1
A
–1.08
1.19
0.76
–55 to 150
_C
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
55
85
35
Maximum
70
105
45
Unit
_C/W
2-1
Si6875DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –6.4 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –2.5 V, I
D
= –5.5 A
V
GS
= –1.8 V, I
D
= –4.6 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –5 V, I
D
= –6.4 A
I
S
= –1.6 A, V
GS
= 0 V
–20
0.022
0.029
0.042
19
–0.70
–1.1
0.027
0.036
0.052
W
W
S
V
–0.45
"100
–1
–25
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.6 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
10 V,
I
D
^
–1 A, V
GEN
= –4.5 V R
G
= 6
W
1A
4 5 V,
V
DS
= –10 V V
GS
= –4.5 V, I
D
= –6.4 A
10 V,
45V
64
26
4.6
5.9
26
27
170
75
30
40
40
250
110
50
ns
36
nC
C
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2.5 V
24
2V
I
D
– Drain Current (A)
18
I
D
– Drain Current (A)
18
125_C
12
24
30
T
C
= –55_C
25_C
Transfer Characteristics
12
1.5 V
6
0.5, 1 V
0
0
3
6
9
12
6
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
S
FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
2-2
Si6875DQ
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
r
DS(on)
– On-Resistance (
W
)
4000
3500
C – Capacitance (pF)
0.08
V
GS
= 1.8 V
0.06
3000
2500
2000
1500
1000
0.02
V
GS
= 4.5 V
0
0
6
12
18
24
30
500
0
0
C
rss
4
8
12
16
20
C
oss
C
iss
Vishay Siliconix
Capacitance
0.04
V
GS
= 2.5 V
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 6.4 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 6.4 A
1.4
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
12
18
24
30
1.2
2
1.0
1
0.8
0
0
6
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.08
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.06
I
D
= 6.4 A
0.04
T
J
= 25_C
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si6875DQ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.5
0.4
80
V
GS(th)
Variance (V)
0.3
Power (W)
I
D
= 250
mA
0.2
0.1
0.0
20
–0.1
–0.2
–50
0
0.001
60
100
Single Pulse Power, Junction-to-Ambient
40
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 71230
S-01235—Rev. A, 12-Jun-00
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