• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• High-side DC/DC conversion
- Notebook
- Server
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• Point-of-load conversion
S
N-Channel MOSFET
D
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
Configuration
30
0.0095
0.0135
10
15
Single
G
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
PowerPAK SO-8
Si7390DP-T1-E3
Si7390DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
a
Pulsed drain current
Continuous source current (diode conduction)
a
Maximum power dissipation
a
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
b, c
SYMBOL
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
10 s
30
± 20
15
12
STEADY STATE
30
± 20
9
7
± 50
1.5
1.8
1.1
-55 to +150
260
UNIT
V
A
4.1
5
3.2
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (MOSFET)
a
Maximum junction-to-case (drain)
t
10 s
Steady state
Steady state
SYMBOL
R
thJA
R
thJC
TYPICAL
20
53
2.1
MAXIMUM
25
70
3.2
°C/W
UNIT
Notes
a.
Surface mounted on 1” x 1” FR4 board
b.
See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
c.
Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S17-1748-Rev. F, 27-Nov-17
Document Number: 72214
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7390DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Diode forward voltage
a
Dynamic
b
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain reverse recovery time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, di/dt = 100 A/μs
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
-
-
-
0.2
-
-
-
-
-
10
3.5
2.1
0.8
16
7
43
14
35
15
-
-
1.4
30
12
70
25
60
ns
nC
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 13 A
V
DS
= 15 V, I
D
= 15 A
I
S
= 4.1 A, V
GS
= 0 V
30
0.8
-
-
-
40
-
-
-
-
-
-
-
-
-
-
0.0075
0.0105
45
0.7
-
3
± 100
1
5
-
0.0095
0.0135
-
1.1
V
nA
μA
A
S
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1748-Rev. F, 27-Nov-17
Document Number: 72214
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7390DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
50
Vishay Siliconix
30
3V
30
20
20
T
C
= 125 °C
10
25 °C
-55 °C
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
1800
C
iss
R
DS(on)
- On-Resistance ()
0.024
C - Capacitance (pF)
1500
1200
0.018
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.006
900
C
oss
600
C
rss
300
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
6
1.8
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
5
V
DS
= 15 V
I
D
= 12.5 A
1.6
V
GS
= 10 V
I
D
= 12.5 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S17-1748-Rev. F, 27-Nov-17
Document Number: 72214
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7390DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
0.040
Vishay Siliconix
10
R
DS(on)
- On-Resistance ()
I
S
- Source Current (A)
T
J
= 150 °C
0.032
0.024
I
D
= 12.5 A
1
T
J
= 25 °C
0.016
0.008
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.4
100
80
V
GS(th)
Variance (V)
0.2
0.0
-0.2
-0.4
20
-0.6
-0.8
-50
0
0.01
Power (W)
I
D
= 250 µA
60
40
-25
0
25
50
75
100
125
150
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
100
Limited
by
R
DS(on)
(1)
10
I
D
- Drain Current (A)
10 ms
1
100 ms
1s
10 s
0.1
T
C
= 25 °C
Single pulse
DC
0.01
0.1
(1)
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
S17-1748-Rev. F, 27-Nov-17
Document Number: 72214
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72214.
S17-1748-Rev. F, 27-Nov-17
Document Number: 72214
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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