Si7421DN
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−30
FEATURES
I
D
(A)
−9.8
−7.4
r
DS(on)
(W)
0.025 @ V
GS
=
−10
V
0.043 @ V
GS
=
−4.5
V
D
TrenchFETr Power MOSFET
D
New PowerPAKr Package
−
Low Thermal Resistance, R
thJC
−
Low 1.07-mm Profile
APPLICATIONS
D
Battery Switch
PowerPAK 1212-8
S
3.30 mm
S
1
2
S
3
S
3.30 mm
4
D
8
7
D
6
D
5
D
G
G
D
P-Channel MOSFET
Bottom View
Ordering Information: Si7421DN-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
T
A
= 25_C
T
A
= 85_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"20
Unit
V
−9.8
−7
−30
−3
3.6
1.9
−55
to 150
−6.4
−4.6
A
−1.3
1.5
0.8
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
28
65
2.9
Maximum
35
81
3.8
Unit
_C/W
C/W
1
Si7421DN
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−30
V, V
GS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V, T
J
= 85_C
V
DS
v
−5
V, V
GS
=
−10
V
V
GS
=
−10
V, I
D
=
−9.8
A
V
GS
=
−4.5
V, I
D
=
−7.4
A
V
DS
=
−15
V, I
D
=
−9.8
A
I
S
=
−3.0
A, V
GS
= 0 V
−30
0.020
0.034
20
−0.8
−1.2
0.025
0.043
−1
−3
"100
−1
−5
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
=
−3.0
A, di/dt = 100 A/ms
V
DD
=
−15
V, R
L
= 15
W
I
D
^
−1
A, V
GEN
=
−10
V, R
G
= 6
W
f = 1 MHz
V
DS
=
−15
V, V
GS
=
−10
V, I
D
=
−9.8
A
26.2
4.5
6
6.5
10
13
57
42
30
15
20
90
65
50
ns
W
40
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
25
20
15
10
5
0
0
1
Output Characteristics
V
GS
= 10 thru 4 V
30
25
20
15
10
Transfer Characteristics
I
D
−
Drain Current (A)
3V
I
D
−
Drain Current (A)
T
C
= 125_C
5
0
0.0
25_C
−55_C
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
2
Si7421DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
C
−
Capacitance (pF)
0.04
V
GS
= 4.5 V
0.03
V
GS
= 10 V
0.02
0.01
0.00
0
5
10
15
20
25
30
Vishay Siliconix
On-Resistance vs. Drain Current
2000
Capacitance
r
DS(on)
−
On-Resistance (
W
)
1600
C
iss
1200
800
400
C
rss
0
0
5
10
C
oss
15
20
25
30
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9.8 A
Gate Charge
1.6
1.5
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9.8 A
8
6
4
2
0
0
5
10
15
20
25
30
Q
g
−
Total Gate Charge (nC)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
T
J
= 150_C
10
r
DS(on)
−
On-Resistance (
W
)
0.08
I
D
= 9.8 A
0.06
I
D
= 2.6 A
0.04
T
J
= 25_C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
3
Si7421DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.5
0.4
V
GS(th)
Variance (V)
Power (W)
0.3
0.2
0.1
−0.0
−0.1
−0.2
−0.3
−50
0
0.01
0.1
1
Time (sec)
10
100
600
10
I
D
= 250
mA
40
50
Single Pulse Power, Juncion-To-Ambient
30
20
−25
0
25
50
75
100
125
150
T
J
−
Temperature (_C)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
10
I
D
−
Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
1
10
100
P(t) = 10
dc
0.01
0.1
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
Si7421DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
www.vishay.com
5
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