b. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
Document Number: 73210
S13-1847-Rev. C, 19-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8415DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 1 A, dI/dt = 100 A/µs
V
DD
= - 6 V, R
L
= 6
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
f = 1 MHz
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 1 A
19
1.9
4.8
19
15
32
180
115
80
25
50
270
175
120
ns
30
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 1 A
V
GS
= - 2.5 V, I
D
= - 1 A
V
GS
= - 1.8 V, I
D
= - 1 A
V
DS
= - 10 V, I
D
= - 1 A
I
S
= - 1 A, V
GS
= 0 V
-5
0.031
0.038
0.050
11
- 0.8
- 1.1
0.037
0.046
0.060
S
V
- 0.4
-1
± 100
-1
-5
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 5 thru 2.5
V
2
V
I
D
- Drain Current (A)
25
20
I
D
- Drain Current (A)
20
15
15
10
1.5
V
5
1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
T
C
= 125 °C
5
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 73210
S13-1847-Rev. C, 19-Aug-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8415DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.12
2500
0.10
R
DS(on)
- On-Resistance (Ω)
2000
0.08
V
GS
= 1.8
V
0.06
V
GS
= 2.5
V
0.04
V
GS
= 4.5
V
C - Capacitance (pF)
C
iss
1500
1000
C
oss
500
C
rss
0.02
0.00
0
5
10
15
20
25
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 6
V
I
D
= 1 A
1.4
V
GS
= 4.5
V
I
D
= 1 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
4
1.3
1.2
3
1.1
2
1.0
1
0.9
0
0
5
10
15
20
25
0.8
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
30
0.10
On-Resistance vs. Junction Temperature
I
S
- Source Current (A)
T
J
= 150 °C
10
R
DS(on)
- On-Resistance (Ω)
0.08
0.06
I
D
= 1 A
0.04
T
J
= 25 °C
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73210
S13-1847-Rev. C, 19-Aug-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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