• Low On-Resistance Load Switch for Portable Devices
- Low Power Consumption, Low Voltage Drop
- Increased Battery Life
- Space Savings on PCB
D
MICRO FOOT
Bump Side
View
Backside
View
S
2
G
1
8416
XXX
S
3
S
6
D
4
D
5
G
Device Marking:
8416
xxx = Date/Lot Traceability Code
Ordering Information:
Si8416DB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
S
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
IR/Convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
8
±5
16
e
16
e
9.3
a, b
7.4
a, b
20
11
2.3
a, b
13
8.4
2.77
a, b
1.77
a, b
- 55 to 150
260
°C
W
A
Unit
V
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. T
C
= 25 °C package limited.
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
Steady State
Symbol
R
thJA
R
thJC
Typical
37
7
Maximum
45
9.5
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= 2.5 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 0.5 A
V
GS
= 1.2 V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 4 V, R
L
= 2.7
Ω
I
D
≅
1.5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
GS
= 0.1 V, f = 1 MHz
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1.5 A
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
1470
580
450
17
1.8
3.4
2.5
13
15
40
10
25
30
80
20
ns
Ω
26
nC
pF
g
fs
V
DS
= 4 V, I
D
= 1.5 A
5
0.019
0.021
0.023
0.027
0.040
22
0.023
0.025
0.030
0.040
0.095
S
Ω
0.35
8
2.2
- 2.7
0.80
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.5 A, V
GS
= 0
0.7
35
18
13
22
T
C
= 25 °C
20
- 20
1.2
70
35
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 1.5 V
8
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
T
C
= 25
°C
4
10
10
5
2
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.2
T
C
= 125
°C
T
C
= - 55
°C
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
1.4
1.6
Output Characteristics
0.10
V
GS
= 1.2 V
0.08
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2400
Transfer Characteristics
2000
C
iss
1600
0.06
1200
C
oss
C
rss
0.04
V
GS
= 1.5 V
V
GS
= 1.8 V
800
0.02
V
GS
= 2.5 V
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
V
GS
= 4.5 V
400
0
0
2
4
6
V
DS
- Drain-to-Source Voltage (V)
8
On-Resistance vs. Drain Current and Gate Voltage
5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.5 A
V
GS
- Gate-to-Source Voltage (V)
4
V
DS
= 4 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50
Capacitance
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1.5 A
V
GS
= 1.5 V; I
D
= 0.5 A
3
V
DS
= 2 V
V
DS
= 6.4 V
V
GS
= 1.2 V; I
D
= 0.5 A
2
1
0
0
4
8
12
16
Q
g
- Total Gate Charge (nC)
20
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.10
I
D
= 1.5 A
0.08
I
S
- Source Current (A)
T
J
= 150
°C
10
R
DS(on)
- On-Resistance (Ω)
0.06
T
J
= 25
°C
1
0.04
T
J
= 125
°C
0.02
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
0.6
20
Power (W)
125
150
V
GS(th)
(V)
0.5
I
D
= 250 μA
0.4
15
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25
°C
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
0.1
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63716
S11-2526-Rev. A, 26-Dec-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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