SUM110P04-04L
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
−40
FEATURES
I
D
(A)
d
D
TrenchFETr Power MOSFET
D
New Package with Low Thermal Resistance
r
DS(on)
(W)
0.0042 @ V
GS
=
−10
V
0.0062 @ V
GS
=
−4.5
V
−110
−110
APPLICATIONS
D
Automotive
−
12-V Boardnet
−
High-Side Switches
−
Motor Drives
S
TO-263
G
G
D S
Top View
D
Ordering Information: SUM110P04-04L
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
d
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
b
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
−40
"20
−110
−110
−240
−75
281
375
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient PCB Mount
b
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Limited by package.
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
_C/W
1
SUM110P04-04L
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
=
−250
mA
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
=
−40
V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
=
−40
V, V
GS
= 0 V, T
J
= 125_C
V
DS
=
−40
V, V
GS
= 0 V, T
J
= 175_C
V
DS
=
−5
V, V
GS
=
−10
V
V
GS
=
−10
V, I
D
=
−30
A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS( )
DS(on)
V
GS
=
−10
V, I
D
=
−30
A, T
J
= 125_C
V
GS
=
−10
V, I
D
=
−30
A, T
J
= 175_C
V
GS
=
−4.5
V, I
D
=
−20
A
Forward Transconductance
a
g
fs
V
DS
=
−15
V, I
D
=
−30
A
20
0.005
−120
0.0034
0.0042
0.0063
0.0076
0.0062
S
W
−40
−1
−3
"100
−1
−50
−250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
=
−20
V, R
L
= 0.18
W
20
I
D
]
−110
A, V
GEN
=
−10
V, R
g
= 2.5
W
V
DS
=
−20
V, V
GS
=
−10
V, I
D
=
−110
A
,
,
V
GS
= 0 V, V
DS
=
−25
V, f = 1 MHz
11200
1650
1200
235
45
65
3
25
30
190
110
40
45
300
165
ns
W
350
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
=
−85
A, di/dt = 100 A/ms
,
m
I
F
=
−85
A, V
GS
= 0 V
−1.0
65
−3.7
0.12
−110
−240
−1.5
100
−5.6
0.28
A
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72437
S-40840—Rev. B, 03-May-04
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
240
200
I
D
−
Drain Current (A)
160
120
80
40
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
V
GS
= 10 thru 5 V
200
175
150
4V
I
D
−
Drain Current (A)
125
100
75
50
25
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
C
= 125_C
25_C
Transfer Characteristics
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
240
200
g
fs
−
Transconductance (S)
160
120
80
40
0
0
15
30
45
60
75
90
I
D
−
Drain Current (A)
14000
12000
C
−
Capacitance (pF)
10000
8000
6000
4000
2000
0
0
5
10
15
20
25
30
35
40
V
DS
−
Drain-to-Source Voltage (V)
C
oss
C
rss
T
C
=
−55_C
25_C
125_C
r
DS(on)
−
On-Resistance (
W
)
0.010
On-Resistance vs. Drain Current
0.008
0.006
V
GS
= 4.5 V
V
GS
= 10 V
0.004
0.002
0.000
0
20
40
60
80
100
120
I
D
−
Drain Current (A)
20
Capacitance
Gate Charge
V
GS
−
Gate-to-Source Voltage (V)
C
iss
16
V
DS
= 20 V
I
D
= 110 A
12
8
4
0
0
50
100
150
200
250
300
350
400
450
Q
g
−
Total Gate Charge (nC)
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
3
SUM110P04-04L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I
S
−
Source Current (A)
Source-Drain Diode Forward Voltage
1.7
r
DS(on)
−
On-Resiistance
(Normalized)
1.4
T
J
= 150_C
10
T
J
= 25_C
1.1
0.8
0.5
−50
−25
0
25
50
75
100
125
150
175
1
0.0
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
48
I
D
= 250
mA
46
100
V
(BR)DSS
(V)
I
Dav
(a)
44
10
I
AV
(A) @ T
A
= 25_C
42
1
I
AV
(A) @ T
A
= 150_C
40
0.1
0.0001
0.001
0.01
0.1
1
10
t
in
(Sec)
38
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
www.vishay.com
4
Document Number: 72437
S-40840—Rev. B, 03-May-04
SUM110P04-04L
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
300
250
100
I
D
−
Drain Current (A)
200
150
100
50
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Limited
by Package
I
D
−
Drain Current (A)
1000
Safe Operating Area
Limited by r
DS(on)
10
ms
100
ms
1 ms
10
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
1
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
0.01
10
−4
10
−3
10
−2
Square Wave Pulse Duration (sec)
10
−1
1
Document Number: 72437
S-40840—Rev. B, 03-May-04
www.vishay.com
5
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