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SGA2286ZPCK1: 产品描述0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER; 产品类别热门应用无线/射频/通信; 文件大小283KB，共6页; 制造商RF Micro Devices (Qorvo)

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SGA2286ZPCK1概述

0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

0 MHz - 5000 MHz 射频/微波宽带低功率放大器

SGA2286ZPCK1规格参数

参数名称	属性值
最大输入功率	18 dBm
最小工作频率	0.0 MHz
最大工作频率	5000 MHz
最小工作温度	-40 Cel
最大工作温度	85 Cel
加工封装描述	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
each_compli	Yes
欧盟RoHS规范	Yes
状态	Active
微波射频类型	WIDE BAND LOW POWER
阻抗特性	50 ohm
结构	COMPONENT
增益	13.5 dB
端子涂层	NOT SPECIFIED

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SGA2286ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA2286Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

The SGA2286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

figuration featuring one-micron emitters provides high F

and excellent thermal per-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

Features



High Gain: 14dB at 1950MHz

Cascadable 50Ω

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Applications

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

Gain (dB)

Gain & Return Loss vs. Freq. @T

=+25°C



InGaP HBT

SiGe BiCMOS

Si BiCMOS

GAIN

IRL

ORL

Return Loss (dB)

-10



-20



SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

-30

Frequency (GHz)

-40

Parameter

Small Signal Gain

Min.

13.5

Specification

Typ.

15.0

14.0

12.6

8.3

7.0

20.0

19.4

5000

Max.

16.5

Unit

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss (>10dB)

Input Return Loss

16.8

1950MHz

Output Return Loss

19.5

1950MHz

Noise Figure

3.5

1950MHz

Device Operating Voltage

1.9

2.2

2.5

Device Operating Current

Thermal Resistance

°C/W

(Junction - Lead)

Test Conditions: V

=5V, I

=20mA Typ., OIP

Tone Spacing=1MHz, P

OUT

per tone=-10dBm, R

BIAS

=140Ω, T

=25°C, Z

=50Ω

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS100915

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SGA2286ZPCK1相似产品对比

	SGA2286ZPCK1	SGA2286Z	SGA2286ZSR	SGA2286ZSQ
描述	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大输入功率	18 dBm	18 dBm	18 dBm	18 dBm
最小工作频率	0.0 MHz	0.0 MHz	0.0 MHz	0.0 MHz
最大工作频率	5000 MHz	5000 MHz	5000 MHz	5000 MHz
最小工作温度	-40 Cel	-40 Cel	-40 Cel	-40 Cel
最大工作温度	85 Cel	85 Cel	85 Cel	85 Cel
加工封装描述	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-86, 4 PIN
each_compli	Yes	Yes	Yes	Yes
欧盟RoHS规范	Yes	Yes	Yes	Yes
状态	Active	Active	Active	Active
微波射频类型	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
阻抗特性	50 ohm	50 ohm	50 ohm	50 ohm
结构	COMPONENT	COMPONENT	COMPONENT	COMPONENT
增益	13.5 dB	13.5 dB	13.5 dB	13.5 dB
端子涂层	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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