DESD3V3S1BL
LOW CAPACITANCE BIDIRECTIONAL TVS DIODES
Features
Low Profile Package (0.53mm max) and Ultra-Small PCB
Footprint Area (1.08 * 0.68mm max) Suitable for Compact
Portable Electronics
Provides ESD Protection per IEC 61000-4-2 Standard:
Air
±
30kV, Contact
±
25kV
1 Channel of ESD Protection
Low Channel Input Capacitance
Typically Used in Cellular Handsets, Portable Electronics,
Communication Systems, Computers and Peripherals
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X1-DFN1006-2
Case Material: Molded Plastic, ―Green‖ Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper Leadframe. Solderable per MIL-
STD-202, Method 208
e4
Polarity: Cathode Band
Weight: 0.001 grams (Approximate)
X1-DFN1006-2
Bottom View
Device Schematic
Ordering Information
(Note 4)
Product
DESD3V3S1BL-7B
Notes:
Compliance
Standard
Marking
RH
Reel Size(inches)
7
Tape Width(mm)
8
Quantity per Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
X1-DFN1006-2
RH = Product Type Marking Code
Line Denotes Pin#1
DESD3V3S1BL
Document number: DS35995 Rev. 5 - 2
1 of 6
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May 2018
© Diodes Incorporated
DESD3V3S1BL
Maximum Ratings
(@ T
A
= +25° unless otherwise specified.)
C,
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P
PP
I
PP
V
ESD_CONTACT
V
ESD_AIR
Value
35
5
±25
±30
Unit
W
A
kV
kV
Conditions
8/20μs, Per Figure 3
8/20μs, Per Figure 3
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
, T
STG
Value
250
500
-65 to +150
Unit
mW
°
C/W
°
C
Electrical Characteristics
(@ T
A
= +25° unless otherwise specified.)
C,
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Clamping Voltage, Positive Transients
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
Notes:
Symbol
V
RWM
I
RM
V
CL
V
BR
R
DIF
C
T
Min
—
—
—
—
3.8
—
—
Typ
—
10
4.5
5.8
—
0.3
10
Max
3.3
100
5.4
7.0
6.5
—
13
Unit
V
nA
V
V
Ω
pF
Test Conditions
—
V
RWM
= 3.3V
I
PP
= 1A, t
P
= 8/20μs
I
PP
= 5A, t
P
= 8/20μs
I
R
= 1mA
I
R
= 1A
V
R
= 0V, f = 1MHz
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website
at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
DESD3V3S1BL
Document number: DS35995 Rev. 5 - 2
2 of 6
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May 2018
© Diodes Incorporated
DESD3V3S1BL
250
225
P
D
, POWER DISSIPATION (mW)
Note 5
100
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°
C)
Figure 1 Power Derating Curve
175
PEAK PULSE DERATING % OF
PEAK POWER OR CURRENT
75
50
25
0
0
25
50
75 100 125 150 175 200
(°
C)
T
A
, AMBIENT TEMPERATURE (癈 )
Figure 2 Pulse Derating Curve
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
I
PP
, PEAK PULSE CURRENT (%I
pp
)
100
50
0
0
40
t, TIME (
s)
Figure 3 Pulse Waveform
20
60
) 1000
A
n
(
T
N
E
R
R 100
U
C
E
S
R
E
V
E
10
R
S
U
O
E
N
A
1
T
N
A
T
S
N
I
,
R
0.1
I
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
0
1
2
3
V
R,
INSTANTANEOUS REVERSE VOLTAGE (V)
V,
R
Figure 4 Typical Reverse Characteristics
7
11
C
J
, JUNCTION CAPACITANCE (pF)
10.5
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
0
0.5
f = 1MHz
V
C
,CLAMPING VOLTAGE (V)
IEC61000-4-5
(Lighting)
6
5
4
1
1.5
2
2.5
V
R
, REVERSE VOLTAGE (V)
Figure 5 Typical Capacitance
3
3.3
0
2
4
6
CURRENT FROM I/O TO V
SS
(A)
Figure 6 Clamping Voltage Characteristic
8
DESD3V3S1BL
Document number: DS35995 Rev. 5 - 2
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May 2018
© Diodes Incorporated
DESD3V3S1BL
20
CURRENT FROM I/O TO Vss (A)
15
10
5
0
0
4
8
12
VOLTAGE FROM I/O TO Vss (V)
Figure 7 Current vs. Voltage
DESD3V3S1BL
Document number: DS35995 Rev. 5 - 2
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DESD3V3S1BL
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
X1-DFN1006-2
A
A1
D
R
E
b
X1-DFN1006-2
Dim
Min
Max
Typ
A
0.47
0.53
0.50
A1
0
0.05
0.03
b
0.45
0.55
0.50
D
0.95 1.075 1.00
E
0.55 0.675 0.60
e
-
-
0.40
L
0.20
0.30
0.25
R
0.05
0.15
0.10
All Dimensions in mm
L
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X1-DFN1006-2
X1
X
Dimensions
C
G
X
X1
Y
Value (in mm)
0.70
0.30
0.40
1.10
0.70
Y
G
C
DESD3V3S1BL
Document number: DS35995 Rev. 5 - 2
5 of 6
www.diodes.com
May 2018
© Diodes Incorporated
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