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VIT6045C-M3

产品描述Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
文件大小144KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VIT6045C-M3概述

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VT6045C-M3, VIT6045C-M3, VT6045CHM3, VIT6045CHM3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.33 V at I
F
= 10 A
FEATURES
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
TO-262AA
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
K
2
VT6045C
PIN 1
PIN 3
3
1
VIT6045C
PIN 1
PIN 3
2
3
1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
K
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 30 A
T
J
max.
Package
Diode variations
2 x 30 A
45 V
320 A
0.47 V
150 °C
TO-220AB, TO-262AA
Dual common cathode
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
V
RRM
VT6045C
45
60
A
30
320
-40 to +150
A
°C
VIT6045C
UNIT
V
Revision: 22-Nov-13
Document Number: 89352
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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